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EP0501896
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EP About this file: EP0501896
| EP0501896 - Improved collector for a bipolar transistor compatible with MOS technology [Right-click to bookmark this link] | Status | The application has been refused Status updated on 23.11.2007 Database last updated on 12.07.2024 | Most recent event Tooltip | 23.11.2007 | Refusal of application | published on 26.12.2007 [2007/52] | Applicant(s) | For all designated states Fahrenheit Thermoscope LLC 2215- B Renaissance Drive, Suite 5 Las Vegas, NV 89119 / US | [2007/04] |
| Former [1992/36] | For all designated states FRANCE TELECOM Etablissement autonome de droit public, 6, Place d'Alleray F-75015 Paris / FR | Inventor(s) | 01 /
Nouailhat, Alain 26 Rue du Pré d'Elle F-38240 Meylan / FR | 02 /
Bois, Daniel 140 Allée Chantoiseau F-38330 Saint-Ismier / FR | [1992/36] | Representative(s) | Harris, Ian Richard, et al D Young & Co LLP 120 Holborn London EC1N 2DY / GB | [N/P] |
| Former [2005/51] | Harris, Ian Richard, et al D Young & Co 120 Holborn London EC1N 2DY / GB | ||
| Former [2005/35] | (deleted) | ||
| Former [1992/36] | Thibault, Jean-Marc Cabinet Beau de Loménie 51, Avenue Jean Jaurès B.P. 7073 F-69301 Lyon Cédex 07 / FR | Application number, filing date | 92420047.0 | 12.02.1992 | [1992/36] | Priority number, date | FR19910001984 | 13.02.1991 Original published format: FR 9101984 | [1992/36] | Filing language | FR | Procedural language | FR | Publication | Type: | A2 Application without search report | No.: | EP0501896 | Date: | 02.09.1992 | Language: | FR | [1992/36] | Type: | A3 Search report | No.: | EP0501896 | Date: | 12.05.1993 | Language: | FR | [1993/19] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 22.03.1993 | Classification | IPC: | H01L29/08, H01L29/52, H01L29/73 | [1993/19] | CPC: |
H01L29/7322 (EP,US);
H01L29/0821 (EP,US);
H01L29/41708 (EP,US);
H01L29/7325 (EP,US)
|
| Former IPC [1992/36] | H01L29/08, H01L29/73, H01L27/06 | Designated contracting states | AT, CH, DE, ES, FR, GB, IT, LI, NL [1992/36] | Title | German: | Verbesserter Kollektor für einen Bipolartransistor kompatibel mit der MOS-Technologie | [1992/36] | English: | Improved collector for a bipolar transistor compatible with MOS technology | [1992/36] | French: | Perfectionnement au collecteur d'un transistor bipolaire compatible avec la technologie MOS | [1992/36] | Examination procedure | 26.10.1993 | Examination requested [1993/51] | 02.04.1996 | Despatch of a communication from the examining division (Time limit: M06) | 14.10.1996 | Reply to a communication from the examining division | 15.07.1997 | Despatch of a communication from the examining division (Time limit: M06) | 23.04.1998 | Reply to a communication from the examining division | 03.02.2000 | Despatch of a communication from the examining division (Time limit: M06) | 03.08.2000 | Reply to a communication from the examining division | 21.05.2004 | Despatch of a communication from the examining division (Time limit: M06) | 05.01.2005 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time | 14.03.2005 | Reply to a communication from the examining division | 08.08.2007 | Despatch of communication that the application is refused, reason: substantive examination [2007/52] | 18.08.2007 | Application refused, date of legal effect [2007/52] | Request for further processing for: | 14.03.2005 | Request for further processing filed | 14.03.2005 | Full payment received (date of receipt of payment) Request granted | 30.03.2005 | Decision despatched | 23.04.1998 | Request for further processing filed | 23.04.1998 | Full payment received (date of receipt of payment) Request granted | 11.05.1998 | Decision despatched | Fees paid | Renewal fee | 18.02.1994 | Renewal fee patent year 03 | 21.02.1995 | Renewal fee patent year 04 | 20.02.1996 | Renewal fee patent year 05 | 19.02.1997 | Renewal fee patent year 06 | 19.02.1998 | Renewal fee patent year 07 | 19.02.1999 | Renewal fee patent year 08 | 24.02.2000 | Renewal fee patent year 09 | 23.02.2001 | Renewal fee patent year 10 | 27.02.2002 | Renewal fee patent year 11 | 25.02.2003 | Renewal fee patent year 12 | 24.02.2004 | Renewal fee patent year 13 | 01.08.2005 | Renewal fee patent year 14 | 24.02.2006 | Renewal fee patent year 15 | 05.02.2007 | Renewal fee patent year 16 | Penalty fee | Additional fee for renewal fee | 28.02.2005 | 14 M06 Fee paid on 01.08.2005 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0201867 (NIPPON TELEGRAPH & TELEPHONE [JP]); | [Y]EP0303435 (SONY CORP [JP]); | [YD]FR2626406 (FRANCE ETAT [FR]); | [Y]EP0337720 (SYNERGY SEMICONDUCTOR CORP [US]) | [A] - IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 33, no. 3, Mars 1986, NEW YORK US pages 345 - 353 FANG-SHI J. LAI 'Design and Characteristics of a Lightly Doped Drain (LDD) Device Fabricated with Self-Aligned Titanium Silicide' |