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Extract from the Register of European Patents

EP About this file: EP0576774

EP0576774 - Voltage regulator for memory devices [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  14.07.2000
Database last updated on 31.08.2024
Most recent event   Tooltip14.07.2000No opposition filed within time limitpublished on 30.08.2000 [2000/35]
Applicant(s)For all designated states
STMicroelectronics Srl
Via C. Olivetti, 2
20041 Agrate Brianza (Milano) / IT
[N/P]
Former [1998/35]For all designated states
STMicroelectronics S.r.l.
Via C. Olivetti, 2
20041 Agrate Brianza (Milano) / IT
Former [1994/01]For all designated states
SGS-THOMSON MICROELECTRONICS S.r.l.
Via C. Olivetti, 2
I-20041 Agrate Brianza (Milano) / IT
Inventor(s)01 / Flocchi, Carlo
Via G. Pascoli
I-27100 Belgioioso (PV) / IT
02 / Torelli, Guido
Via Cadorna, 4
I-27016 S. Alessio (PV) / IT
[1994/01]
Representative(s)Botti, Mario
Botti & Ferrari S.p.A.
Via Cappellini, 11
20124 Milano / IT
[N/P]
Former [1999/17]Botti, Mario
Botti & Ferrari S.r.l. Via Locatelli, 5
20124 Milano / IT
Application number, filing date92830340.330.06.1992
[1994/01]
Filing languageIT
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0576774
Date:05.01.1994
Language:EN
[1994/01]
Type: B1 Patent specification 
No.:EP0576774
Date:15.09.1999
Language:EN
[1999/37]
Search report(s)(Supplementary) European search report - dispatched on:EP19.03.1993
ClassificationIPC:G11C16/06
[1994/01]
CPC:
G11C16/30 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT [1994/01]
TitleGerman:Spannungsregler für Speichergeräte[1994/01]
English:Voltage regulator for memory devices[1994/01]
French:Régulateur de tension pour dispositifs de mémoire[1994/01]
Examination procedure27.05.1994Examination requested  [1994/35]
20.12.1996Despatch of a communication from the examining division (Time limit: M06)
27.06.1997Reply to a communication from the examining division
20.03.1998Despatch of a communication from the examining division (Time limit: M06)
30.09.1998Reply to a communication from the examining division
12.11.1998Despatch of communication of intention to grant (Approval: Yes)
22.03.1999Communication of intention to grant the patent
16.06.1999Fee for grant paid
16.06.1999Fee for publishing/printing paid
Opposition(s)16.06.2000No opposition filed within time limit [2000/35]
Fees paidRenewal fee
21.06.1994Renewal fee patent year 03
21.06.1995Renewal fee patent year 04
24.06.1996Renewal fee patent year 05
20.06.1997Renewal fee patent year 06
19.06.1998Renewal fee patent year 07
24.06.1999Renewal fee patent year 08
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Documents cited:Search[A]US5086238  (WATANABE TAKAO [JP], et al);
 [A]GB2214380  (INTEL CORP [US])
 [A]  - 1990 SYMPOSIUM ON VLSI CIRCUITS June 1990, HONOLULU, US pages 99 - 100 SHOHJI ET AL 'A novel automatic erase technique using an internal voltage generator for 1 Mbit flash EEPROM'
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.