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Extract from the Register of European Patents

EP About this file: EP0611494

EP0611494 - RED LIGHT SURFACE EMITTING SEMICONDUCTOR LASER [Right-click to bookmark this link]
Former [1994/34]VISIBLE LIGHT SURFACE EMITTING SEMICONDUCTOR LASER
[1998/37]
StatusNo opposition filed within time limit
Status updated on  30.11.2001
Database last updated on 20.09.2024
Most recent event   Tooltip26.12.2003Lapse of the patent in a contracting state
New state(s): GR		published on 11.02.2004  [2004/07]
Applicant(s)For all designated states
Cielo Communications, Inc.
325 Interlocken Parkway, Building A
Broomfield, Colorado 80021 / US
[2000/14]
Former [1994/34]For all designated states
BANDGAP TECHNOLOGY CORPORATION
325 Interlocken Parkway
Broomfield, CO 80021 / US
Inventor(s)01 / BRYAN, Robert, P.
1730 Bluff Street
Boulder, CO 80304 / US
02 / OLBRIGHT, Gregory, R.
290 Hawthorne
Boulder, CO 80304 / US
03 / LOTT, James, A.
9900 Spain, N.E. Apt. E-2026
Albuquerque, NM 87111 / US
04 / SCHNEIDER, Richard, P.
1441 Monte Lango, N.E.
Albuquerque, NM 87112 / US
05 / JEWELL, Jack, L.
1895 Alpine Unit C-13
Boulder, CO 80304 / US
[1994/34]
Representative(s)Klunker, Hans-Friedrich, et al
Klunker Schmitt-Nilson Hirsch Patentanwälte Destouchesstrasse 68
80796 München / DE
[N/P]
Former [1994/52]Klunker, Hans-Friedrich, Dr., et al
Patentanwälte Klunker . Schmitt-Nilson . Hirsch Winzererstrasse 106
D-80797 München / DE
Former [1994/34]MacDougall, Donald Carmichael
Cruikshank & Fairweather 19 Royal Exchange Square
Glasgow G1 3AE, Scotland / GB
Application number, filing date92925093.406.11.1992
[1994/34]
WO1992US09535
Priority number, dateUS1991079096407.11.1991         Original published format: US 790964
[1994/34]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO9309582
Date:13.05.1993
Language:EN
[1993/12]
Type: A1 Application with search report 
No.:EP0611494
Date:24.08.1994
Language:EN
The application published by WIPO in one of the EPO official languages on 13.05.1993 takes the place of the publication of the European patent application.
[1994/34]
Type: B1 Patent specification 
No.:EP0611494
Date:24.01.2001
Language:EN
[2001/04]
Search report(s)International search report - published on:US13.05.1993
(Supplementary) European search report - dispatched on:EP03.08.1994
ClassificationIPC:H01S5/32, H01S5/10
[2000/18]
CPC:
B82Y20/00 (EP,US); H01S5/18308 (EP,US); H01S2302/00 (EP,US);
H01S5/041 (EP,US); H01S5/18341 (EP,US); H01S5/18358 (EP,US);
H01S5/18369 (EP,US); H01S5/18377 (EP,US); H01S5/2063 (EP,US);
H01S5/3215 (EP,US); H01S5/32308 (EP,US); H01S5/32325 (EP,US);
H01S5/32341 (EP,US); H01S5/34326 (EP,US); H01S5/34333 (EP,US);
H01S5/347 (EP,US) (-)
Former IPC [1994/38]H01S3/19, H01S3/085
Former IPC [1994/34]H01S3/19
Designated contracting statesAT,   BE,   CH,   DE,   DK,   ES,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   SE [1994/34]
TitleGerman:OBERFLÄCHENEMITTIERENDER LASER FÜR ROTES LICHT[1998/37]
English:RED LIGHT SURFACE EMITTING SEMICONDUCTOR LASER[1998/37]
French:LASER SEMICONDUCTEUR EMETTANT EN SURFACE DE LA LUMIERE ROUGE[1998/37]
Former [1994/34]OBERFLÄCHENEMITTIERENDER LASER FÜR SICHTBARES LICHT
Former [1994/34]VISIBLE LIGHT SURFACE EMITTING SEMICONDUCTOR LASER
Former [1994/34]LASER SEMICONDUCTEUR EMETTANT EN SURFACE DE LA LUMIERE VISIBLE
Entry into regional phase25.05.1994National basic fee paid 
25.05.1994Search fee paid 
25.05.1994Designation fee(s) paid 
25.05.1994Examination fee paid 
Examination procedure04.06.1993Request for preliminary examination filed
International Preliminary Examining Authority: DE
25.05.1994Examination requested  [1994/34]
23.05.1995Despatch of a communication from the examining division (Time limit: M06)
01.12.1995Reply to a communication from the examining division
05.06.1996Despatch of a communication from the examining division (Time limit: M06)
13.12.1996Reply to a communication from the examining division
19.06.1997Despatch of a communication from the examining division (Time limit: M04)
27.10.1997Reply to a communication from the examining division
21.08.1998Despatch of communication of intention to grant (Approval: No)
28.12.1998Despatch of communication of intention to grant (Approval: later approval)
13.03.2000Communication of intention to grant the patent
29.05.2000Fee for grant paid
29.05.2000Fee for publishing/printing paid
Opposition(s)25.10.2001No opposition filed within time limit [2002/03]
Fees paidRenewal fee
15.11.1994Renewal fee patent year 03
09.11.1995Renewal fee patent year 04
29.11.1996Renewal fee patent year 05
10.11.1997Renewal fee patent year 06
10.11.1998Renewal fee patent year 07
22.11.1999Renewal fee patent year 08
20.11.2000Renewal fee patent year 09
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT24.01.2001
BE24.01.2001
ES24.01.2001
GR24.01.2001
NL24.01.2001
DK24.04.2001
[2004/07]
Former [2003/45]AT24.01.2001
BE24.01.2001
ES24.01.2001
NL24.01.2001
DK24.04.2001
Former [2003/07]AT24.01.2001
BE24.01.2001
ES24.01.2001
NL24.01.2001
Former [2002/25]AT24.01.2001
BE24.01.2001
ES24.01.2001
Former [2002/10]AT24.01.2001
BE24.01.2001
Former [2002/03]BE24.01.2001
Documents cited:Search[A]EP0207699  (HITACHI LTD [JP]) [A] 1,3 * figure 5; claim 7 *;
 [DA]  - J.L. JEWELL ET AL, "Vertical cavity surface emitting lasers:Design, growth, fabrication, characterization", IEEE JOURNAL OF QUANTUM ELECTRONICS., NEW YORK US, (199106), vol. 27, no. 6, doi:doi:10.1109/3.89950, pages 1332 - 1346, XP000229828 [DA] 1,2 * the whole document *

DOI:   http://dx.doi.org/10.1109/3.89950
 [A]  - C. LEI ET AL, "InGaAs-GaAs quantum well vertical cavity surface emitting laser using MBE", APPLIED PHYSICS LETTERS., NEW YORK US, (19910318), vol. 58, no. 11, doi:doi:10.1063/1.104390, pages 1122 - 1124, XP000209765 [A] 1,2 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.104390
 [A]  - M.A. KAHN ET AL, "Vertical cavity room temperature stimulated emission from photopumped GaAn films", APPLIED PHYSICS LETTERS., NEW YORK US, (19910408), vol. 58, no. 14, doi:doi:10.1063/1.105163, pages 1515 - 1517, XP000209750 [A] 1,4,6 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.105163
 [A]  - M. A. KAHN ET AL, "Reflective filters based on single crystal GaN/AlGaN multilayers", APPLIED PHYSICS LETTERS., NEW YORK US, (19910916), vol. 59, no. 12, doi:doi:10.1063/1.105284, pages 1449 - 1451, XP000232881 [A] 1,4 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.105284
 [PX]  - R.P SCHNEIDER ET AL, "Visible (657 nm) InGaP/InAlGaP strained quantum well vertical cavity surface emitting laser", APPLIED PHYSICS LETTERS., NEW YORK US, (19920430), vol. 60, no. 15, doi:doi:10.1063/1.107178, pages 1830 - 1832, XP000273988 [PX] 1-3 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.107178
International search[Y]US4949350  (JEWELL JACK L [US], et al);
 [YP]US5115441  (KOPF ROSE F [US], et al);
 [XP]US5146465  (KHAN MUHAMMAD A [US], et al)
by applicantUS4949350
    - J. JEWELL ET AL., "Vertical Cavity Lasers for Optical Interconnects", SPIE, (1990), vol. 1389, pages 401 - 407
    - J. JEWELL ET AL., "Vertical-Cavity Surface-Emitting Lasers: Design, Growth Fabrication, Characterization", IEEE JOURNAL OF OUANTUM ELECTRONICS, (199106), vol. 27, no. 6, doi:doi:10.1109/3.89950, pages 1332 - 1346, XP000229828

DOI:   http://dx.doi.org/10.1109/3.89950
    - H.-J. YOO ET AL., "Low Series Resistance Vertical-Cavity Front-Surface-Emitting Laser Diode", APPL. PHVS. LETT., (19900514), vol. 56, no. 20, doi:doi:10.1063/1.103029, pages 1942 - 1945, XP000149915

DOI:   http://dx.doi.org/10.1063/1.103029
    - J. JEWELL ET AL., "Vertical Cavity Lasers for Optical Interconnects", INTERNATIONAL CONFERENCE ON ADVANCES IN INTERCONNECTION AND PACKAQING, (1990), vol. 1389, pages 401 - 407
    - Y.H. LEE ET AL., "Top-Surface-Emitting GaAs Four-Quantum-Well Lasers Emitting at 0.85", ELECTRON LETT., (1990), vol. 26, pages 1308 - 1310
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.