Extract from the Register of European Patents

EP About this file: EP0558925

EP0558925 - Method for controlling roughness on surface of monocrystal [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  28.05.1999
Database last updated on 09.04.2026
Most recent event   Tooltip28.05.1999No opposition filed within time limitpublished on 14.07.1999 [1999/28]
Applicant(s)For all designated states
CANON KABUSHIKI KAISHA
30-2, 3-chome, Shimomaruko, Ohta-ku
Tokyo / JP
[N/P]
Former [1993/36]For all designated states
CANON KABUSHIKI KAISHA
30-2, 3-chome, Shimomaruko, Ohta-ku
Tokyo / JP
Inventor(s)01 / Ichikawa, Takeshi, c/o Canon Kabushiki Kaisha
30-2, 3-chome, Shimomaruko
Ohta-ku, Tokyo 146 / JP
[1993/36]
Representative(s)Bühling, Gerhard
Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4
80336 München / DE
[N/P]
Former [1993/36]Bühling, Gerhard, Dipl.-Chem.
Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4
D-80336 München / DE
Application number, filing date93101424.529.01.1993
[1993/36]
Priority number, dateJP1992001652531.01.1992         Original published format: JP 1652592
JP1992004194531.01.1992         Original published format: JP 4194592
JP1992004616331.01.1992         Original published format: JP 4616392
[1993/36]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0558925
Date:08.09.1993
Language:EN
[1993/36]
Type: B1 Patent specification 
No.:EP0558925
Date:22.07.1998
Language:EN
[1998/30]
Search report(s)(Supplementary) European search report - dispatched on:EP18.06.1993
ClassificationIPC:H01L21/203, C23C14/54, H01L21/76
[1993/36]
CPC:
H10P14/2905 (EP,US); C23C14/54 (EP,US); C30B29/06 (EP,US);
C30B33/00 (EP,US); H10P14/22 (EP,US); H10P14/2922 (EP,US);
H10P14/3411 (EP,US); H10P14/3452 (EP,US); H10P14/36 (EP,US);
H10P14/3602 (EP,US); H10P90/15 (EP,US); Y10S117/913 (EP,US) (-)
Designated contracting statesDE,   FR,   GB [1993/36]
TitleGerman:Verfahren, um die Rauhigkeit von Einkristallen zu steuern[1993/36]
English:Method for controlling roughness on surface of monocrystal[1993/36]
French:Procédé pour contrôler la rugosité de la surface de monocristaux[1993/36]
Examination procedure25.01.1994Examination requested  [1994/13]
08.03.1996Despatch of a communication from the examining division (Time limit: M04)
18.07.1996Reply to a communication from the examining division
24.01.1997Despatch of a communication from the examining division (Time limit: M06)
28.07.1997Reply to a communication from the examining division
30.09.1997Despatch of communication of intention to grant (Approval: Yes)
29.01.1998Communication of intention to grant the patent
30.04.1998Fee for grant paid
30.04.1998Fee for publishing/printing paid
Opposition(s)23.04.1999No opposition filed within time limit [1999/28]
Fees paidRenewal fee
30.01.1995Renewal fee patent year 03
25.01.1996Renewal fee patent year 04
29.01.1997Renewal fee patent year 05
28.01.1998Renewal fee patent year 06
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Documents cited:Search[X] JP3208887  
 [X]   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH vol. B39, 1989, AMSTERDAM NL pages 72 - 80 J. Y. TSAO ET AL
 [X]   PATENT ABSTRACTS OF JAPAN vol. 015, no. 484 (C-0892)9 December 1991 & JP-A-32 08 887 ( MATSUSHITA ELECTRIC INDUSTRIAL CO. ) 12 September 1991 [X]
 [X]   JOURNAL OF ELECTRONIC MATERIALS vol. 12, no. 6, 1983, NEW YORK pages 973 - 982 H. TAKAI ET AL [X]
 [YD]   THIN SOLID FILMS vol. 106, no. 1/2, August 1983, LAUSANNE CH pages 3 - 136 Y. OTA [YD]
 [Y]   JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B. vol. 3, no. 2, March 1985, NEW YORK US pages 732 - 735 M. I. J. BEALE ET AL [Y]
 [A]   APPLIED PHYSICS LETTERS. vol. 48, no. 26, 30 June 1986, NEW YORK US pages 1793 - 1795 T. L. LIN ET AL [A]
Examination  Handbook of Sputter Deposition Technology, K. Wasa and S. Hayakawa, Noyes Publications, N.J. USA, 1992.
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