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Extract from the Register of European Patents

EP About this file: EP0567104

EP0567104 - Semiconductor memory device having a self-refresh function [Right-click to bookmark this link]
Former [1993/43]Circuit for detecting refresh address signals of a semiconductor memory device
[1998/27]
StatusNo opposition filed within time limit
Status updated on  07.05.1999
Database last updated on 03.10.2024
Most recent event   Tooltip07.05.1999No opposition filed within time limitpublished on 23.06.1999 [1999/25]
Applicant(s)For all designated states
Samsung Electronics Co., Ltd.
416 Maetan-3 Dong
Paldal-gu
Suwon City, Kyungki-do 441-373 / KR
[N/P]
Former [1993/43]For all designated states
SAMSUNG ELECTRONICS CO., LTD.
416 Maetan-3 Dong, Paldal-ku
Suwon-city, Kyungki-do 441-373 / KR
Inventor(s)01 / Kang, Kyung-Woo
1172-15, Maetan-dong, Paldal-gu
Suwon-city, Kyungki-do / KR
[1993/43]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstrasse 4
80802 München / DE
[N/P]
Former [1993/43]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Maximilianstrasse 58
D-80538 München / DE
Application number, filing date93106502.321.04.1993
[1993/43]
Priority number, dateKR1967000289222.04.1992         Original published format: KR 672892
[1993/43]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0567104
Date:27.10.1993
Language:EN
[1993/43]
Type: A3 Search report 
No.:EP0567104
Date:17.04.1996
[1996/16]
Type: B1 Patent specification 
No.:EP0567104
Date:01.07.1998
Language:EN
[1998/27]
Search report(s)(Supplementary) European search report - dispatched on:EP29.02.1996
ClassificationIPC:G11C29/00, G11C11/406
[1996/15]
CPC:
G11C29/02 (EP,US); G11C11/406 (EP,KR,US)
Former IPC [1993/43]G11C29/00
Designated contracting statesDE,   FR,   GB,   IT [1993/43]
TitleGerman:Halbleiterspeichervorrichtung mit Selbstauffrischungsfunktion[1998/27]
English:Semiconductor memory device having a self-refresh function[1998/27]
French:Dispositif de mémoire à semi-conducteurs possédant un rafraîchissement propre[1998/27]
Former [1993/43]Schaltung zur Erkennung von Auffrischungadressignalen eines Halbleiterspeichersgeräts
Former [1993/43]Circuit for detecting refresh address signals of a semiconductor memory device
Former [1993/43]Circuit de détection de signaux d'adresse de rafraîchissement d'un dispositif de mémoire à semi-conducteurs
Examination procedure30.07.1996Examination requested  [1996/39]
17.12.1996Despatch of a communication from the examining division (Time limit: M06)
25.06.1997Reply to a communication from the examining division
16.07.1997Despatch of communication of intention to grant (Approval: Yes)
19.11.1997Communication of intention to grant the patent
06.02.1998Fee for grant paid
06.02.1998Fee for publishing/printing paid
Opposition(s)02.04.1999No opposition filed within time limit [1999/25]
Fees paidRenewal fee
28.04.1995Renewal fee patent year 03
30.04.1996Renewal fee patent year 04
25.04.1997Renewal fee patent year 05
29.04.1998Renewal fee patent year 06
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Documents cited:Search[A]US4672583  (NAKAIZUMI KAZUO [JP]) [A] 1-7 * abstract * * column 5, line 48 - column 8, line 23 *;
 [A]US4933908  (BYERS LARRY L [US], et al) [A] 1-7 * abstract ** column 4, line 42 - column 5, line 2; claims 1-4 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.