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Extract from the Register of European Patents

EP About this file: EP0571976

EP0571976 - Static RAM with thin film transistor [Right-click to bookmark this link]
Former [1993/48]Thin film transistor and static RAM with thin film transistor
[1997/42]
StatusNo opposition filed within time limit
Status updated on  21.08.1998
Database last updated on 07.10.2024
Most recent event   Tooltip07.05.1999Lapse of the patent in a contracting statepublished on 23.06.1999 [1999/25]
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho, Saiwai-ku Kawasaki-shi
Kanagawa-ken 210-8572 / JP
[N/P]
Former [1997/42]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210 / JP
Former [1993/48]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP
Inventor(s)01 / Kasai, Kunihiro
26, Kanoedai, Minami-ku
Yokohama-shi, Kanagawa-ken / JP
[1993/48]
Representative(s)Lehn, Werner, et al
Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20
81904 München / DE
[N/P]
Former [1993/48]Lehn, Werner, Dipl.-Ing., et al
Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20
D-81904 München / DE
Application number, filing date93108495.826.05.1993
[1993/48]
Priority number, dateJP1992013931229.05.1992         Original published format: JP 13931292
[1993/48]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0571976
Date:01.12.1993
Language:EN
[1993/48]
Type: A3 Search report 
No.:EP0571976
Date:05.01.1994
Language:EN
[1994/01]
Type: B1 Patent specification 
No.:EP0571976
Date:15.10.1997
Language:EN
[1997/42]
Search report(s)(Supplementary) European search report - dispatched on:EP16.11.1993
ClassificationIPC:H01L27/11, H01L29/772
[1997/42]
CPC:
H01L29/78648 (EP,KR,US); H01L29/78645 (KR); H01L29/78624 (EP,KR,US);
H10B10/125 (EP,KR,US); Y10S257/903 (EP,US)
Former IPC [1993/48]H01L29/784, H01L27/11
Designated contracting statesDE,   FR,   GB [1993/48]
TitleGerman:Statisches RAM mit einem Dünnschichttransistor[1997/42]
English:Static RAM with thin film transistor[1997/42]
French:RAM statique comprenant un transistor à couche mince[1997/42]
Former [1993/48]Dünnschichttransistor und statisches RAM mit einem Dünnschichttransistor
Former [1993/48]Thin film transistor and static RAM with thin film transistor
Former [1993/48]Transistor à couche mince et RAM statique comprenant un transistor à couche mince
Examination procedure26.05.1993Examination requested  [1993/48]
28.03.1995Despatch of a communication from the examining division (Time limit: M06)
04.08.1995Reply to a communication from the examining division
28.01.1997Despatch of communication of intention to grant (Approval: Yes)
18.04.1997Communication of intention to grant the patent
03.07.1997Fee for grant paid
03.07.1997Fee for publishing/printing paid
Opposition(s)16.07.1998No opposition filed within time limit [1998/41]
Fees paidRenewal fee
12.04.1995Renewal fee patent year 03
09.05.1996Renewal fee patent year 04
12.05.1997Renewal fee patent year 05
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Lapses during opposition  TooltipGB26.05.1998
[1999/25]
Documents cited:Search[PXX]JPH04125970  ;
 [X]EP0382165  (FUJITSU LTD [JP]);
 [X]EP0403279  (XEROX CORP [US]);
 [A]EP0443549  (SONY CORP [JP])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.