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EP0572917
European procedure
Extract from the Register of European Patents
EP About this file: EP0572917
| EP0572917 - Compound semiconductor device and fabrication method of producing the compound semiconductor device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 15.12.2000 Database last updated on 31.08.2024 | Most recent event Tooltip | 28.12.2007 | Lapse of the patent in a contracting state New state(s): IT | published on 30.01.2008 [2008/05] | Applicant(s) | For all designated states CANON KABUSHIKI KAISHA 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo / JP | [N/P] |
| Former [1993/49] | For all designated states CANON KABUSHIKI KAISHA 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo / JP | Inventor(s) | 01 /
Ouchi, Toshihiko, c/o Canon Kabushiki Kaisha 3-30-2, Shimomaruko Ohta-ku, Tokyo / JP | 02 /
Sakata, Hajime, c/o Canon Kabushiki Kaisha 3-30-2, Shimomaruko Ohta-ku, Tokyo / JP | 03 /
Ohguri, Noriaki, c/o Canon Kabushiki Kaisha 3-30-2, Shimomaruko Ohta-ku, Tokyo / JP | 04 /
Uchida, Mamoru, c/o Canon Kabushiki Kaisha 3-30-2, Shimomaruko Ohta-ku, Tokyo / JP | [1993/49] | Representative(s) | Tiedtke, Harro, et al Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4 80336 München / DE | [N/P] |
| Former [1994/08] | Tiedtke, Harro, Dipl.-Ing., et al Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4 D-80336 München / DE | ||
| Former [1993/49] | Tiedtke, Harro, Dipl.-Ing. Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4 D-80336 München / DE | Application number, filing date | 93108564.1 | 27.05.1993 | [1993/49] | Priority number, date | JP19920170194 | 04.06.1992 Original published format: JP 17019492 | JP19930107746 | 09.04.1993 Original published format: JP 10774693 | [1993/49] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0572917 | Date: | 08.12.1993 | Language: | EN | [1993/49] | Type: | B1 Patent specification | No.: | EP0572917 | Date: | 16.02.2000 | Language: | EN | [2000/07] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 06.10.1993 | Classification | IPC: | H01S5/10, H01L33/00 | [2000/06] | CPC: |
H01S5/12 (EP,US);
H01S5/11 (EP,US);
H01S5/1035 (EP,US);
H01S5/1203 (EP,US);
H01S5/1225 (EP,US);
H01S5/1231 (EP,US)
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| Former IPC [1993/49] | H01S3/085, H01L33/00 | Designated contracting states | DE, FR, GB, IT, NL [1993/49] | Title | German: | Verbindungshalbleiterbauelement und Verfahren zu seiner Herstellung | [1993/49] | English: | Compound semiconductor device and fabrication method of producing the compound semiconductor device | [1993/49] | French: | Dispositif en semi-conducteur composé et méthode de fabrication du dispositif | [1993/49] | Examination procedure | 25.04.1994 | Examination requested [1994/25] | 05.10.1995 | Despatch of a communication from the examining division (Time limit: M06) | 10.04.1996 | Reply to a communication from the examining division | 23.09.1996 | Despatch of a communication from the examining division (Time limit: M06) | 03.04.1997 | Reply to a communication from the examining division | 01.12.1997 | Despatch of a communication from the examining division (Time limit: M07) | 01.07.1998 | Reply to a communication from the examining division | 22.03.1999 | Despatch of communication of intention to grant (Approval: Yes) | 23.07.1999 | Communication of intention to grant the patent | 25.10.1999 | Fee for grant paid | 25.10.1999 | Fee for publishing/printing paid | Opposition(s) | 17.11.2000 | No opposition filed within time limit [2001/05] | Fees paid | Renewal fee | 24.05.1995 | Renewal fee patent year 03 | 29.05.1996 | Renewal fee patent year 04 | 27.05.1997 | Renewal fee patent year 05 | 27.05.1998 | Renewal fee patent year 06 | 31.05.1999 | Renewal fee patent year 07 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | IT | 16.02.2000 | NL | 16.02.2000 | [2008/05] |
| Former [2003/07] | NL | 16.02.2000 | Documents cited: | Search | [X]JP03076289 ; | [X]GB2151402 (HITACHI LTD); | [A]US4847857 (OHKURA YUJI [JP]) | [X] - ELECTRONICS LETTERS. vol. 23, no. 25, 3 December 1987, ENAGE GB pages 1342 - 1343 Y. NAKANO ET AL. 'AlGaAs/GaAs visible distributed feedback laser operating at 770 nm' | [X] - PATENT ABSTRACTS OF JAPAN vol. 015, no. 241 (E-1080)21 June 1991 & JP-A-03 076 289 ( SANYO ELECTRIC CO LTD ) 2 April 1991, & JP03076289 A 19910402 |