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EP0578970
European procedure
Extract from the Register of European Patents
EP About this file: EP0578970
| EP0578970 - Fabrication method for an integrated semi-conductor memory with a predetermined storage capacity [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 02.07.1999 Database last updated on 18.03.2026 | Most recent event Tooltip | 02.07.1999 | No opposition filed within time limit | published on 18.08.1999 [1999/33] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
| Former [1998/35] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 80333 München / DE | ||
| Former [1994/03] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 D-80333 München / DE | Inventor(s) | 01 /
Savignac, Dominique, Dr. rer. nat. Bahnhofstrasse 2 85737 Ismaning / DE | [1998/35] |
| Former [1994/03] | 01 /
Savignac, Dominique, Dr. rer. nat. Bahnhofstrasse 2 W-8045 Ismaning / DE | Application number, filing date | 93109301.7 | 09.06.1993 | [1994/03] | Priority number, date | DE19924220878 | 25.06.1992 Original published format: DE 4220878 | [1994/03] | Filing language | DE | Procedural language | DE | Publication | Type: | A2 Application without search report | No.: | EP0578970 | Date: | 19.01.1994 | Language: | DE | [1994/03] | Type: | A3 Search report | No.: | EP0578970 | Date: | 30.08.1995 | Language: | DE | [1995/35] | Type: | B1 Patent specification | No.: | EP0578970 | Date: | 26.08.1998 | Language: | DE | [1998/35] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 14.07.1995 | Classification | IPC: | G11C8/00, G06F11/00 | [1995/35] | CPC: |
G11C8/12 (EP)
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| Former IPC [1994/03] | G11C8/00 | Designated contracting states | AT, DE, FR, GB, IT, NL [1994/03] | Title | German: | Verfahren zum Herstellen eines integrierten Halbleiterspeichers mit vorgegebener Speicherkapazität | [1994/03] | English: | Fabrication method for an integrated semi-conductor memory with a predetermined storage capacity | [1994/03] | French: | Méthode de fabrication d'une mémoire à semi-conducteurs intégrée ayant une capacité de stockage prédéterminée | [1994/03] | Examination procedure | 26.02.1996 | Examination requested [1996/17] | 10.06.1997 | Despatch of a communication from the examining division (Time limit: M04) | 19.11.1997 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time | 28.11.1997 | Reply to a communication from the examining division | 10.02.1998 | Despatch of communication of intention to grant (Approval: Yes) | 26.02.1998 | Communication of intention to grant the patent | 19.05.1998 | Fee for grant paid | 19.05.1998 | Fee for publishing/printing paid | Opposition(s) | 27.05.1999 | No opposition filed within time limit [1999/33] | Request for further processing for: | 28.11.1997 | Request for further processing filed | 28.11.1997 | Full payment received (date of receipt of payment) Request granted | 15.12.1997 | Decision despatched | Fees paid | Renewal fee | 21.06.1995 | Renewal fee patent year 03 | 20.06.1996 | Renewal fee patent year 04 | 17.06.1997 | Renewal fee patent year 05 | 18.06.1998 | Renewal fee patent year 06 |
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