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EP0587091
European procedure
Extract from the Register of European Patents
EP About this file: EP0587091
| EP0587091 - Method of inspecting wafers for manufacturing light emitting elements [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 17.09.1999 Database last updated on 02.11.2024 | Most recent event Tooltip | 17.09.1999 | No opposition filed within time limit | published on 03.11.1999 [1999/44] | Applicant(s) | For all designated states Shin-Etsu Handotai Kabushiki Kaisha 4-2 Marunouch 1-chome Chiyoda-ku Tokyo 100 / JP | [N/P] |
| Former [1994/11] | For all designated states Shin-Etsu Handotai Kabushiki Kaisha 4-2 Marunouch 1-chome Chiyoda-ku Tokyo 100 / JP | Inventor(s) | 01 /
Yamada, Masato, c/o Isobe Kojo Shin-Etsu Handotai K. K., 13-1 Isobe 2-chome Annaka-shi, Gunma-ken / JP | 02 /
Kawasaki, Makoto, c/o Isobe Kojo Shin-Etsu Handotai K. K., 13-1 Isobe 2-chome Annaka-shi, Gunma-ken / JP | 03 /
Tamura, Yutaka, c/o Isobe Kojo Shin-Etsu Handotai K. K., 13-1 Isobe 2-chome Annaka-shi, Gunma-ken / JP | [1994/11] | Representative(s) | Urner, Peter Ter Meer Steinmeister & Partner Patentanwälte mbB Mauerkircherstrasse 45 81679 München / DE | [N/P] |
| Former [1994/11] | Urner, Peter, Dipl.-Phys. Patentanwälte TER MEER-MÜLLER-STEINMEISTER & PARTNER Mauerkircherstrasse 45 D-81679 München / DE | Application number, filing date | 93114275.6 | 06.09.1993 | [1994/11] | Priority number, date | JP19920268222 | 10.09.1992 Original published format: JP 26822292 | [1994/11] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0587091 | Date: | 16.03.1994 | Language: | EN | [1994/11] | Type: | B1 Patent specification | No.: | EP0587091 | Date: | 11.11.1998 | Language: | EN | [1998/46] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.12.1993 | Classification | IPC: | H01L33/00, H01L21/66, G01R31/308 | [1994/11] | CPC: |
H01L22/24 (EP,US);
G01R31/2656 (EP,US);
H01L33/0025 (EP,US)
| Designated contracting states | DE, FR, GB [1994/11] | Title | German: | Methode zur Untersuchung von Wafern für das Herstellen von lichtemittierenden Elementen | [1998/46] | English: | Method of inspecting wafers for manufacturing light emitting elements | [1994/11] | French: | Méthode pour inspecter des plaquettes pour fabriquer des élements émetteurs de lumière | [1994/11] |
| Former [1994/11] | Methode zur Untersuchung von Scheiben für das Herstellen von lichtemittierenden Elementen | Examination procedure | 19.05.1994 | Examination requested [1994/30] | 01.02.1996 | Despatch of a communication from the examining division (Time limit: M06) | 06.08.1996 | Reply to a communication from the examining division | 09.04.1997 | Despatch of a communication from the examining division (Time limit: M02) | 13.05.1997 | Reply to a communication from the examining division | 26.01.1998 | Despatch of communication of intention to grant (Approval: Yes) | 06.05.1998 | Communication of intention to grant the patent | 05.08.1998 | Fee for grant paid | 05.08.1998 | Fee for publishing/printing paid | Opposition(s) | 12.08.1999 | No opposition filed within time limit [1999/44] | Fees paid | Renewal fee | 18.09.1995 | Renewal fee patent year 03 | 13.09.1996 | Renewal fee patent year 04 | 16.09.1997 | Renewal fee patent year 05 | 03.09.1998 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]WO8401034 (WESTERN ELECTRIC CO [US]) [X] 1,2 * page 2, line 18 - line 36; figure - * * page 4, line 11 - line 19 * [A] 7; | [A]JPS6139596 ; | [A]JPS63250835 ; | [A]JPS61269389 ; | [A] - PATENT ABSTRACTS OF JAPAN, (19860705), vol. 10, no. 192, Database accession no. (E - 417), & JP61039596 A 19860225 (FUJITSU LTD) [A] 1,7 * abstract * | [A] - PATENT ABSTRACTS OF JAPAN, (19890213), vol. 13, no. 62, Database accession no. (E - 715), & JP63250835 A 00000000 (HITACHI CABLE LTD) [A] 1,7 * abstract * | [A] - K. TADATOMO ET AL., "Defects in the active layer p-Al0.35Ga0.65As of high-brightness red-light-emitting diodes", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, LONDON GB, (199201), vol. 7, no. 1A, doi:doi:10.1088/0268-1242/7/1A/019, pages A98 - A103, XP000243991 [A] 3 * paragraph [02.1] * DOI: http://dx.doi.org/10.1088/0268-1242/7/1A/019 | [A] - PATENT ABSTRACTS OF JAPAN, (19870416), vol. 11, no. 122, Database accession no. (E - 500), & JP61269389 A 19861128 (HITACHI LTD) [A] 1 * abstract * | [A] - J.F. BLACK ET AL., "The use of laser-induced photoluminescence to evaluate GaAsP wafers for red-light emitting diodes", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MANCHESTER, NEW HAMPSHIRE US, (197203), vol. 119, no. 3, pages 369 - 372, XP001273428 [A] 1,7 * page - * |