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EP0595233
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EP About this file: EP0595233
| EP0595233 - Method for constructing semiconductor-on-insulator [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 22.05.1998 Database last updated on 31.08.2024 | Most recent event Tooltip | 22.05.1998 | Application deemed to be withdrawn | published on 08.07.1998 [1998/28] | Applicant(s) | For all designated states Texas Instruments Incorporated 13500 North Central Expressway Dallas, Texas 75265 / US | [N/P] |
| Former [1994/18] | For all designated states TEXAS INSTRUMENTS INCORPORATED 13500 North Central Expressway Dallas Texas 75265 / US | Inventor(s) | 01 /
Joyner, Keith A. 1631 University Drive Richardson, TX 75081 / US | 02 /
El-Ghor, Mohamed K. 1221 Canoe Lane Plano, TX 75023 / US | 03 /
Hosack, Harold H. 6911 Vista Willow Drive Dallas, TX 75248 / US | [1994/18] | Representative(s) | Schwepfinger, Karl-Heinz, et al Prinz & Partner GbR Manzingerweg 7 81241 München / DE | [N/P] |
| Former [1994/18] | Schwepfinger, Karl-Heinz, Dipl.-Ing., et al Prinz & Partner, Manzingerweg 7 D-81241 München / DE | Application number, filing date | 93117259.7 | 25.10.1993 | [1994/18] | Priority number, date | US19920966236 | 26.10.1992 Original published format: US 966236 | [1994/18] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0595233 | Date: | 04.05.1994 | Language: | EN | [1994/18] | Type: | A3 Search report | No.: | EP0595233 | Date: | 12.04.1995 | Language: | EN | [1995/15] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 22.02.1995 | Classification | IPC: | H01L21/76, H01L21/265 | [1994/18] | CPC: |
H01L21/26533 (EP,US);
H01L21/76243 (EP,US)
| Designated contracting states | DE, FR, GB, IT, NL [1994/18] | Title | German: | Verfahren zur Herstellung eines Halbleiters auf Isolator | [1994/18] | English: | Method for constructing semiconductor-on-insulator | [1994/18] | French: | Procédé de fabrication d'un semiconducteur sur isolant | [1994/18] | Examination procedure | 09.10.1995 | Examination requested [1995/49] | 04.01.1996 | Despatch of a communication from the examining division (Time limit: M06) | 12.07.1996 | Reply to a communication from the examining division | 30.06.1997 | Despatch of a communication from the examining division (Time limit: M06) | 12.01.1998 | Application deemed to be withdrawn, date of legal effect [1998/28] | 13.02.1998 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [1998/28] | Fees paid | Renewal fee | 12.10.1995 | Renewal fee patent year 03 | 28.10.1996 | Renewal fee patent year 04 | 23.10.1997 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]FR2581795 (GOLANSKI ANDRZEJ [FR]) [X] 1-4,6-8,10,12,14 * page 4, line 17 - page 5, line 22; figures 1-4; claims 1-10 * [A] 5,7,11,13; | [AX]FR2616590 (COMMISSARIAT ENERGIE ATOMIQUE [FR]) [A] 1-3,10,11,14 * page 9, line 10 - page 10, line 33 * * figures 1-4; claims 1-7 * [X] 12,13; | [A] - J.K.Y. WONG ET AL., "STUDY OF SILICON-ON-INSULATOR STRUCTURES FORMED BY LOW DOSE OXYGEN AND NITROGEN IMPLANTATION.", MATERIALS SCIENCE AND ENGINEERING B, LAUSANNE CH, (19920120), vol. B12, no. 1/2, doi:doi:10.1016/0921-5107(92)90261-7, pages 67 - 71, XP000360325 [A] 1-3,8-11 * page 68, column L, paragraph 3 * DOI: http://dx.doi.org/10.1016/0921-5107(92)90261-7 |