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EP0600423
European procedure
Extract from the Register of European Patents
EP About this file: EP0600423
| EP0600423 - Apparatus for contact hole filling in a semiconductor device by irradiation with plasma of inert gas ions [Right-click to bookmark this link] | |||
| Former [1994/23] | Contact hole filling in a semiconductor device by irradiation with plasma of inert gas ions | ||
| [1999/16] | Status | No opposition filed within time limit Status updated on 01.12.2000 Database last updated on 20.12.2024 | Most recent event Tooltip | 01.12.2000 | No opposition filed within time limit | published on 17.01.2001 [2001/03] | Applicant(s) | For all designated states NEC Corporation 7-1, Shiba 5-chome Minato-ku Tokyo 108-8001 / JP | [N/P] |
| Former [2000/05] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome, Minato-ku Tokyo / JP | ||
| Former [1994/23] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | Inventor(s) | 01 /
Isobe, Akira, c/o NEC Corporation 7-1, Shiba 5-chome, Minato-ku Tokyo / JP | [1994/23] | Representative(s) | Glawe, Delfs, Moll Partnerschaft mbB von Patent- und Rechtsanwälten Postfach 26 01 62 80058 München / DE | [N/P] |
| Former [1994/23] | Glawe, Delfs, Moll & Partner Patentanwälte Postfach 26 01 62 D-80058 München / DE | Application number, filing date | 93119232.2 | 29.11.1993 | [1994/23] | Priority number, date | JP19920319551 | 30.11.1992 Original published format: JP 31955192 | [1994/23] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0600423 | Date: | 08.06.1994 | Language: | EN | [1994/23] | Type: | B1 Patent specification | No.: | EP0600423 | Date: | 02.02.2000 | Language: | EN | [2000/05] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 04.03.1994 | Classification | IPC: | H01L21/768, H01L21/321 | [1999/16] | CPC: |
H01L21/32115 (EP,US);
H01L21/76882 (EP,US)
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| Former IPC [1994/23] | H01L21/90, H01L21/321 | Designated contracting states | DE, FR, GB [1994/23] | Title | German: | Vorrrichtung zur Kontaktlochauffüllung in einem Halbleiterelement durch Bestrahlung mit einem Plasma aus inerten Gasionen | [1999/16] | English: | Apparatus for contact hole filling in a semiconductor device by irradiation with plasma of inert gas ions | [1999/16] | French: | Appareil pour le remplissage de trous de contact dans un dispositif semi-conducteur par irradiation au moyen d'un plasma d'ions de gaz inerte | [1999/16] |
| Former [1994/23] | Kontaktlochauffüllung in einem Halbleiterelement durch Bestrahlung mit einem Plasma aus inerten Gasionen | ||
| Former [1994/23] | Contact hole filling in a semiconductor device by irradiation with plasma of inert gas ions | ||
| Former [1994/23] | Remplissage de trous de contact dans un dispositif semi-conducteur par irradiation au moyen d'un plasma d'ions de gaz inerte | Examination procedure | 17.03.1994 | Examination requested [1994/23] | 21.01.1997 | Despatch of a communication from the examining division (Time limit: M06) | 25.07.1997 | Reply to a communication from the examining division | 13.02.1998 | Despatch of a communication from the examining division (Time limit: M06) | 24.08.1998 | Reply to a communication from the examining division | 12.04.1999 | Despatch of communication of intention to grant (Approval: Yes) | 09.07.1999 | Communication of intention to grant the patent | 12.10.1999 | Fee for grant paid | 12.10.1999 | Fee for publishing/printing paid | Opposition(s) | 03.11.2000 | No opposition filed within time limit [2001/03] | Fees paid | Renewal fee | 16.11.1995 | Renewal fee patent year 03 | 19.11.1996 | Renewal fee patent year 04 | 19.11.1997 | Renewal fee patent year 05 | 19.11.1998 | Renewal fee patent year 06 | 19.11.1999 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]EP0202572 (NIPPON TELEGRAPH & TELEPHONE [JP]) [X] 1,5 * page 5, line 21 - line 24 * * page 13, line 26 - page 14, line 4 * * page 15, line 11 - line 18 * * page 19, line 9 - line 20 *; | [A]GB2245596 (SAMSUNG ELECTRONICS CO LTD [KR]) [A] 1,9 * page 6, line 15 - page 7, line 7 *; | [A]EP0401688 (FUJITSU LTD [JP]) [A] 1 * column 5, line 8 - line 55 *; | [A]EP0251253 (FABBIANI BRUNO) | Examination | - A. SHERMAN, chemical vapor deposition for microelectronics, USA, NOYES PUBL. | - B. CHAPMAN, Glow Discharge Processes, USA, JOHN WILEY |