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EP0585003
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Extract from the Register of European Patents
EP Citations: EP0585003
| Cited in | Search | Type: | Patent literature | Publication No.: | EP0133342
[XAY] (NEC CORP [JP]) [X] 1,2,15 * page 6, line 24 - page 9, line 26; figures 1,2 * * page 12, line 3 - line 14 * * page 12, line 20 - line 25 * * page 16, line 9 - line 20 * * page 29, line 1 - line 23; figure 17; claims 1-9 * * page 32, line 3 - line 9 * [A] 11-14 [Y] 5-10; | Type: | Patent literature | Publication No.: | US4675709
[XA] (SCIFRES DONALD R [US], et al) [X] 1,2,4,5,15 * column 1, line 9 - line 27 * * column 2, line 55 - line 68 * * column 5, line 4 - line 7 * * column 5, line 28 - line 30 * * column 6, line 41 - column 7, line 9; figure 6; claims 20,22-25 * [A] 7,9,10; | Type: | Patent literature | Publication No.: | DE3828886
[A] (MITSUBISHI ELECTRIC CORP [JP]) [A] 1-5,9,10,13-15 * column 5, line 2 - line 28 * * column 5, line 55 - column 6, line 39; figure 1 * * column 7, line 43 - line 57 * * column 11, line 6 - line 55; figure 6A; claims 1-4 *; | Type: | Patent literature | Publication No.: | EP0322773
[XY] (FUJITSU LTD [JP]) [X] 1 * column 12, line 28 - column 13, line 33; figures 15,16 * [Y] 5-10; | Type: | Patent literature | Publication No.: | EP0565054
[E] (HUGHES AIRCRAFT CO [US]) [E] 1,9,15 * column 3, line 8 - line 16 * * column 3, line 43 - column 4, line 53 * * column 5, line 55 - column 6, line 11; claims 12-15,18 * * column 7, line 2 - line 14 *; | Type: | Non-patent literature | Publication information: | [PX] - SCHUBERT E F ET AL, "Selective n- and p-type C-doping in Ga/sub 0.47/In/sub 0.53/As superlattices", MOLECULAR BEAM EPITAXY 1992. SEVENTH INTERNATIONAL CONFERENCE, SCHWABISCH GMUND, GERMANY, 24-28 AUG. 1992, ISSN 0022-0248, JOURNAL OF CRYSTAL GROWTH, FEB. 1993, NETHERLANDS, vol. 127, no. 1-4, pages 1037 - 1040 [PX] 1-12,15 * the whole document * | Type: | Non-patent literature | Publication information: | [A] - BROCKERHOFF W ET AL, "D.C.- AND R.F.-CHARACTERISATION OF CONVENTIONAL AND SUPERLATTICE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS AT LOW TEMPERATURES", SOLID STATE ELECTRONICS, (19901101), vol. 33, no. 11, pages 1393 - 1400, XP000161632 [A] 1,5,7,9,15 * page 1393, column R, paragraph 2 - page 1394, column L; figure 1 * | DOI: | http://dx.doi.org/10.1016/0038-1101(90)90114-T | Type: | Non-patent literature | Publication information: | [A] - HIROSHI ITO ET AL, "CARBON INCORPORATION IN (ALGA)AS, (ALIN)AS AND (GAIN)AS TERNARY ALLOYS GROWN BY MOLECULAR BEAM EPITAXY", JAPANESE JOURNAL OF APPLIED PHYSICS, (19910601), vol. 30, no. 6A PART 02, pages L944 - L947, XP000236690 [A] 1,6,8,11,15 * page L944; figure 1 * * page L946; figure 5 * | DOI: | http://dx.doi.org/10.1143/JJAP.30.L944 |