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Extract from the Register of European Patents

EP About this file: EP0585059

EP0585059 - Vertical memory cell processing and structure manufactured by that processing [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  17.03.2000
Database last updated on 03.01.2025
Most recent event   Tooltip17.03.2000No opposition filed within time limitpublished on 03.05.2000 [2000/18]
Applicant(s)For all designated states
STMicroelectronics, Inc.
1310 Electronics Drive
Carrollton, TX 75006-5039 / US
[1999/08]
Former [1994/09]For all designated states
SGS-THOMSON MICROELECTRONICS, INC.
1310 Electronics Drive
Carrollton Texas 75006 / US
Inventor(s)01 / Zamanian, Mehdi
2021 Hearthstone, Carrollton
Denton County, Texas 75010 / US
02 / Worley, James Leon
1309 Colony Court, Flower Mound
Denton County, Texas 75028 / US
[1994/09]
Representative(s)Palmer, Roger, et al
PAGE, WHITE & FARRER 54 Doughty Street
London WC1N 2LS / GB
[1994/09]
Application number, filing date93306575.719.08.1993
[1994/09]
Priority number, dateUS1992093418121.08.1992         Original published format: US 934181
[1994/09]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0585059
Date:02.03.1994
Language:EN
[1994/09]
Type: A3 Search report 
No.:EP0585059
Date:19.07.1995
Language:EN
[1995/29]
Type: B1 Patent specification 
No.:EP0585059
Date:12.05.1999
Language:EN
[1999/19]
Search report(s)(Supplementary) European search report - dispatched on:EP02.06.1995
ClassificationIPC:H01L21/82, H01L27/11
[1995/29]
CPC:
H10D84/01 (EP,US); H10B10/00 (EP,US)
Former IPC [1994/09]H01L21/32, H01L27/06
Designated contracting statesDE,   FR,   GB,   IT [1994/09]
TitleGerman:Verfahren zur Herstellung einer Halbleiter-Speicherstruktur vom vertikalen Typ und nach dem Verfahren hergestellte Struktur[1999/19]
English:Vertical memory cell processing and structure manufactured by that processing[1994/09]
French:Procédé de fabrication d'une cellule de mémoire du type vertical et structure obtenue par ce procédé[1994/09]
Former [1994/09]Verfahren zur Herstellung einer Halbleiter-Speicherstruktur vom vertikalen Type und nachdem Verfahren hergestellte Struktur
Examination procedure14.12.1995Examination requested  [1996/06]
16.10.1996Despatch of a communication from the examining division (Time limit: M06)
14.04.1997Reply to a communication from the examining division
17.10.1997Despatch of a communication from the examining division (Time limit: M04)
17.01.1998Reply to a communication from the examining division
08.05.1998Despatch of communication of intention to grant (Approval: Yes)
19.08.1998Communication of intention to grant the patent
11.11.1998Fee for grant paid
11.11.1998Fee for publishing/printing paid
Opposition(s)15.02.2000No opposition filed within time limit [2000/18]
Fees paidRenewal fee
20.05.1995Renewal fee patent year 03
08.08.1996Renewal fee patent year 04
26.08.1997Renewal fee patent year 05
25.08.1998Renewal fee patent year 06
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Documents cited:Search[XY]JPH02254752  ;
 [Y]JPS63227051  ;
 [A]JPS627151  ;
 [A]US3751687  (JUTZI W);
 [A]US4251876  (MCKENNY VERNON G, et al);
 [A]EP0349022  (TOSHIBA KK [JP]);
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.