EP0585059 - Vertical memory cell processing and structure manufactured by that processing [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 17.03.2000 Database last updated on 03.01.2025 | Most recent event Tooltip | 17.03.2000 | No opposition filed within time limit | published on 03.05.2000 [2000/18] | Applicant(s) | For all designated states STMicroelectronics, Inc. 1310 Electronics Drive Carrollton, TX 75006-5039 / US | [1999/08] |
Former [1994/09] | For all designated states SGS-THOMSON MICROELECTRONICS, INC. 1310 Electronics Drive Carrollton Texas 75006 / US | Inventor(s) | 01 /
Zamanian, Mehdi 2021 Hearthstone, Carrollton Denton County, Texas 75010 / US | 02 /
Worley, James Leon 1309 Colony Court, Flower Mound Denton County, Texas 75028 / US | [1994/09] | Representative(s) | Palmer, Roger, et al PAGE, WHITE & FARRER 54 Doughty Street London WC1N 2LS / GB | [1994/09] | Application number, filing date | 93306575.7 | 19.08.1993 | [1994/09] | Priority number, date | US19920934181 | 21.08.1992 Original published format: US 934181 | [1994/09] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0585059 | Date: | 02.03.1994 | Language: | EN | [1994/09] | Type: | A3 Search report | No.: | EP0585059 | Date: | 19.07.1995 | Language: | EN | [1995/29] | Type: | B1 Patent specification | No.: | EP0585059 | Date: | 12.05.1999 | Language: | EN | [1999/19] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 02.06.1995 | Classification | IPC: | H01L21/82, H01L27/11 | [1995/29] | CPC: |
H10D84/01 (EP,US);
H10B10/00 (EP,US)
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Former IPC [1994/09] | H01L21/32, H01L27/06 | Designated contracting states | DE, FR, GB, IT [1994/09] | Title | German: | Verfahren zur Herstellung einer Halbleiter-Speicherstruktur vom vertikalen Typ und nach dem Verfahren hergestellte Struktur | [1999/19] | English: | Vertical memory cell processing and structure manufactured by that processing | [1994/09] | French: | Procédé de fabrication d'une cellule de mémoire du type vertical et structure obtenue par ce procédé | [1994/09] |
Former [1994/09] | Verfahren zur Herstellung einer Halbleiter-Speicherstruktur vom vertikalen Type und nachdem Verfahren hergestellte Struktur | Examination procedure | 14.12.1995 | Examination requested [1996/06] | 16.10.1996 | Despatch of a communication from the examining division (Time limit: M06) | 14.04.1997 | Reply to a communication from the examining division | 17.10.1997 | Despatch of a communication from the examining division (Time limit: M04) | 17.01.1998 | Reply to a communication from the examining division | 08.05.1998 | Despatch of communication of intention to grant (Approval: Yes) | 19.08.1998 | Communication of intention to grant the patent | 11.11.1998 | Fee for grant paid | 11.11.1998 | Fee for publishing/printing paid | Opposition(s) | 15.02.2000 | No opposition filed within time limit [2000/18] | Fees paid | Renewal fee | 20.05.1995 | Renewal fee patent year 03 | 08.08.1996 | Renewal fee patent year 04 | 26.08.1997 | Renewal fee patent year 05 | 25.08.1998 | Renewal fee patent year 06 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XY]JPH02254752 ; | [Y]JPS63227051 ; | [A]JPS627151 ; | [A]US3751687 (JUTZI W); | [A]US4251876 (MCKENNY VERNON G, et al); | [A]EP0349022 (TOSHIBA KK [JP]); |