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EP0615287
European procedure
Extract from the Register of European Patents
EP About this file: EP0615287
| EP0615287 - Dielectric isolated bipolar transistor [Right-click to bookmark this link] | |||
| Former [1994/37] | Dielectric isolated type semiconductor device provided with bipolar element | ||
| [1999/27] | Status | No opposition filed within time limit Status updated on 12.05.2000 Database last updated on 03.09.2024 | Most recent event Tooltip | 12.05.2000 | No opposition filed within time limit | published on 28.06.2000 [2000/26] | Applicant(s) | For all designated states DENSO CORPORATION 1-1, Showa-cho, Kariya-City Aichi-Pref. / JP | [N/P] |
| Former [1997/33] | For all designated states DENSO CORPORATION 1-1, Showa-cho Kariya-City, Aichi-Pref. / JP | ||
| Former [1994/37] | For all designated states NIPPONDENSO CO., LTD. 1-1, Showa-cho Kariya-city Aichi-pref., 448 / JP | Inventor(s) | 01 /
Iida, Makio 201-1, Naguri, Honkanbe-aza, Imaise-cho Ichinomiya-city, Aichi-pref. / JP | 02 /
Shibata, Tadashi 104-5, Tennou, Yagawa-cho Toyokawa-city, Aichi pref. / JP | 03 /
Sugisaka, Takayuki 17-1, Kutekita, Kitano-cho Okazaki-city, Aichi pref. / JP | 04 /
Miura, Shoji 10-4, Gounaka, Yokoochi, Kouta-cho Nukata-gun, Aichi-pref. / JP | 05 /
Sakakibara, Toshio 2-1, Higashigoumawari, Kaifuku-cho Nishio-city, Aichi-pref. / JP | [1994/37] | Representative(s) | Winter, Brandl - Partnerschaft mbB Alois-Steinecker-Straße 22 85354 Freising / DE | [N/P] |
| Former [1994/37] | KUHNEN, WACKER & PARTNER Alois-Steinecker-Strasse 22 D-85354 Freising / DE | Application number, filing date | 94103618.8 | 09.03.1994 | [1994/37] | Priority number, date | JP19930049657 | 10.03.1993 Original published format: JP 4965793 | [1994/37] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0615287 | Date: | 14.09.1994 | Language: | EN | [1994/37] | Type: | A3 Search report | No.: | EP0615287 | Date: | 30.08.1995 | Language: | EN | [1995/35] | Type: | B1 Patent specification | No.: | EP0615287 | Date: | 07.07.1999 | Language: | EN | [1999/27] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 14.07.1995 | Classification | IPC: | H01L21/76, H01L21/74, H01L29/73 | [1999/27] | CPC: |
H01L29/7322 (EP,US);
H01L21/76264 (EP,US);
H01L21/763 (EP,US);
H01L27/0248 (EP,US);
H01L21/76286 (EP,US)
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| Former IPC [1994/37] | H01L21/76, H01L21/74 | Designated contracting states | DE, FR, NL [1994/37] | Title | German: | Dielektrisch isolierter bipolarer Transistor | [1999/27] | English: | Dielectric isolated bipolar transistor | [1999/27] | French: | Transistor bipolaire à isolation diélectrique | [1999/27] |
| Former [1994/37] | Dielektrisch isolierte Halbleiteranordnung mit einem bipolaren Element | ||
| Former [1994/37] | Dielectric isolated type semiconductor device provided with bipolar element | ||
| Former [1994/37] | Dispositif semi-conducteur à isolation diélectrique comportant un composant bipolaire | Examination procedure | 28.02.1996 | Examination requested [1996/23] | 17.01.1997 | Despatch of a communication from the examining division (Time limit: M04) | 27.05.1997 | Reply to a communication from the examining division | 31.10.1997 | Despatch of a communication from the examining division (Time limit: M04) | 10.03.1998 | Reply to a communication from the examining division | 26.10.1998 | Despatch of communication of intention to grant (Approval: Yes) | 08.01.1999 | Communication of intention to grant the patent | 16.04.1999 | Fee for grant paid | 16.04.1999 | Fee for publishing/printing paid | Opposition(s) | 08.04.2000 | No opposition filed within time limit [2000/26] | Fees paid | Renewal fee | 08.03.1996 | Renewal fee patent year 03 | 12.03.1997 | Renewal fee patent year 04 | 10.03.1998 | Renewal fee patent year 05 | 11.03.1999 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JPH03110852 ; | [A]EP0465961 (SONY CORP [JP]) [A] 1 * column A; figure 6 * | [A] - PATENT ABSTRACTS OF JAPAN, (19910807), vol. 15, no. 308, Database accession no. (E - 1097), & JP3110852 A 19910510 (NIPPONDENSO CO LTD) [A] 1 * abstract * | [A] - UENO K ET AL, "A FULLY FUNCTIONAL 1K ECL RAM ON A BONDED SOI WAFER", INTERNATIONAL ELECTRON DEVICES MEETING, SAN FRANCISCO, DEC. 11 - 14, 1988, INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, (19881211), no. 1988, pages 870 - 872, XP000040495 [A] 1 * the whole document * |