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EP0621641
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EP About this file: EP0621641
| EP0621641 - A heterojunction bipolar transistor and a production method thereof [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 18.07.1997 Database last updated on 10.07.2024 | Most recent event Tooltip | 18.07.1997 | Application deemed to be withdrawn | published on 03.09.1997 [1997/36] | Applicant(s) | For all designated states MITSUBISHI DENKI KABUSHIKI KAISHA 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 / JP | [N/P] |
| Former [1994/43] | For all designated states MITSUBISHI DENKI KABUSHIKI KAISHA 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 / JP | Inventor(s) | 01 /
Shimura, Teruyuki, c/o Mitsubishi Denki K. K. Hikari Micro-ha Dev. Kenkyusho, 1 Mizuhara 4-chome Itami-shi, Hyogo 664 / JP | 02 /
Sakai, Masayuki, c/o Mitsubishi Denki K.K. Hikari Micro-ha Dev. Kenkyusho, 1 Mizuhara 4-chome Itami-shi, Hyogo 664 / JP | [1994/43] | Representative(s) | Winter, Brandl - Partnerschaft mbB Alois-Steinecker-Straße 22 85354 Freising / DE | [N/P] |
| Former [1994/43] | KUHNEN, WACKER & PARTNER Alois-Steinecker-Strasse 22 D-85354 Freising / DE | Application number, filing date | 94105636.8 | 12.04.1994 | [1994/43] | Priority number, date | JP19930093476 | 21.04.1993 Original published format: JP 9347693 | [1994/43] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0621641 | Date: | 26.10.1994 | Language: | EN | [1994/43] | Type: | A3 Search report | No.: | EP0621641 | Date: | 12.04.1995 | Language: | EN | [1995/15] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 22.02.1995 | Classification | IPC: | H01L29/73, H01L21/331 | [1994/43] | CPC: |
H01L29/66318 (EP);
H01L29/41708 (EP);
H01L29/7371 (EP)
| Designated contracting states | DE, FR, GB [1994/43] | Title | German: | Heteroübergang-Bipolartransistor und Verfahren zur Herstellung | [1994/43] | English: | A heterojunction bipolar transistor and a production method thereof | [1994/43] | French: | Transistor bipolaire à hétéro-jonction et procédé pour sa fabrication | [1994/43] | Examination procedure | 13.09.1995 | Examination requested [1995/45] | 28.10.1996 | Despatch of a communication from the examining division (Time limit: M04) | 08.03.1997 | Application deemed to be withdrawn, date of legal effect [1997/36] | 08.04.1997 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [1997/36] | Fees paid | Renewal fee | 25.04.1996 | Renewal fee patent year 03 | Penalty fee | Additional fee for renewal fee | 30.04.1997 | 04 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]EP0367698 (INTERNATIONAL BUSINESS MACHINES CORPORATION) [X] 1 * column 6, line 41 - column 7, line 51; figures 6-10 * [A] 5; | [X] - P.T. GREILING, "Ultrahigh -frequency GaInAs/InP devices and circuits for millimeter wave application", SPIE PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS I, (199011), vol. 1361, pages 47 - 58, XP000238888 [X] 1 * figure 12 * | [X] - S. TANAKA ET AL., "Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors", ELECTRONICS LETTERS, ENAGE GB, (19900830), vol. 26, no. 18, pages 1439 - 1441, XP000108572 [X] 1 * the whole document * | [A] - W.-S. LEE ET AL., "Submicrometer self-aligned AlGaAs/GaAs heterojunction bipolar transistor process suitable for digital applications", IEEE TRANSACTIONS ON ELECTRON DEVICES, NEW YORK US, (199212), vol. 39, no. 12, doi:doi:10.1109/16.168750, pages 2694 - 2700, XP000323168 [A] 2 * the whole document * DOI: http://dx.doi.org/10.1109/16.168750 | [A] - S. SHIKATA ET AL., "Suppression of the emitter size effect on the current gain of AlGaAs/GaAs HBT by utilizing (NH4)2Sx treatment", PROCEEDINGS OF THE SEVENTEENTH INTERNATIONAL SYMPOSIUM ON GALLIUM ARSENIDE AND RELATED COMPOUNDS, JERSEY, (199009), pages 251 - 256, XP000146771 [A] 2 * the whole document * |