EP0631326 - Semiconductor memory device and method of manufacturing same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 30.12.1999 Database last updated on 31.08.2024 | Most recent event Tooltip | 05.09.2008 | Change - representative | published on 08.10.2008 [2008/41] | Applicant(s) | For all designated states ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI Kawauchi, Aoba-ku Sendai-shi Miyagi-ken, 980 / JP | [N/P] |
Former [1994/52] | For all designated states ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI Kawauchi, Aoba-ku Sendai-shi, Miyagi-ken, 980 / JP | Inventor(s) | 01 /
Nishizawa, Jun-ichi 6-16, Komegafukuro 1-chome, Aoba-ku Sendai-shi, Miyagi-ken / JP | [1994/52] | Representative(s) | Sparing Röhl Henseler Postfach 14 04 43 40074 Düsseldorf / DE | [N/P] |
Former [2008/41] | Sparing Röhl Henseler Patentanwälte European Patent Attorneys Postfach 14 04 43 40074 Düsseldorf / DE | ||
Former [1994/52] | Sparing - Röhl - Henseler Patentanwälte Postfach 14 04 43 D-40074 Düsseldorf / DE | Application number, filing date | 94107261.3 | 10.05.1994 | [1994/52] | Priority number, date | JP19930147128 | 12.05.1993 Original published format: JP 14712893 | [1994/52] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0631326 | Date: | 28.12.1994 | Language: | EN | [1994/52] | Type: | A3 Search report | No.: | EP0631326 | Date: | 31.05.1995 | Language: | EN | [1995/22] | Type: | B1 Patent specification | No.: | EP0631326 | Date: | 24.02.1999 | Language: | EN | [1999/08] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 18.04.1995 | Classification | IPC: | H01L29/86, H01L29/72, H01L21/329, H01L21/331 | [1994/52] | CPC: |
H01L29/66356 (EP,US);
H01L27/08 (KR);
H01L29/66196 (EP,US);
H01L29/739 (EP,US);
H01L29/8616 (EP,US);
H01L29/20 (EP)
| Designated contracting states | DE, FR, GB [1994/52] | Title | German: | Halbleiterspeicheranordnung und Verfahren zur Herstellung | [1994/52] | English: | Semiconductor memory device and method of manufacturing same | [1994/52] | French: | Dispositif de mémoire semi-conducteur et méthode de fabrication | [1994/52] | Examination procedure | 26.05.1995 | Examination requested [1995/30] | 30.01.1997 | Despatch of a communication from the examining division (Time limit: M04) | 05.06.1997 | Reply to a communication from the examining division | 16.07.1998 | Despatch of communication of intention to grant (Approval: Yes) | 18.08.1998 | Communication of intention to grant the patent | 20.11.1998 | Fee for grant paid | 20.11.1998 | Fee for publishing/printing paid | Opposition(s) | 25.11.1999 | No opposition filed within time limit [2000/07] | Fees paid | Renewal fee | 12.04.1996 | Renewal fee patent year 03 | 24.05.1997 | Renewal fee patent year 04 | 27.03.1998 | Renewal fee patent year 05 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JPS61158184 ; | [A]JPS60254777 ; | [A]US3972059 (DISTEFANO THOMAS HERMAN); | [A]DE2952513 (NIPPON MUSICAL INSTRUMENTS MFG); | [A]US4484207 (NISHIZAWA JUN-ICHI [JP], et al); |