Extract from the Register of European Patents

EP About this file: EP0645632

EP0645632 - Method of estimating quantity of boron at bonding interface in bonded wafer [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  08.10.1999
Database last updated on 28.03.2026
Most recent event   Tooltip05.09.2008Change - representativepublished on 08.10.2008  [2008/41]
Applicant(s)For all designated states
SHIN-ETSU HANDOTAI COMPANY LIMITED
4-2, Marunouchi 1-Chome Chiyoda-ku
Tokyo / JP
[N/P]
Former [1995/13]For all designated states
SHIN-ETSU HANDOTAI COMPANY LIMITED
4-2, Marunouchi 1-Chome
Chiyoda-ku Tokyo / JP
Inventor(s)01 / Mitani, Kiyoshi
926-13, Yawatamachi
Takasaki-shi, Gunma-ken / JP
02 / Katayama, Masatake
179-7, Shimotoyookamachi
Takasaki-shi, Gunma-ken / JP
03 / Nakazawa, Kazushi
353, Onbegawa, Shinonoi
Nagano-shi, Nagano-ken / JP
[1995/13]
Representative(s)Leinweber & Zimmermann
Patentanwalts-PartG mbB
European Patent Attorneys
Viktualienmarkt 8
80331 München / DE
[N/P]
Former [2008/41]Leinweber & Zimmermann
European Patent Attorneys Patentanwälte Rosental 7
80331 München / DE
Former [1995/13]Patentanwälte Leinweber & Zimmermann
Rosental 7/II Aufg.
D-80331 München / DE
Application number, filing date94115020.323.09.1994
[1995/13]
Priority number, dateJP1993023775124.09.1993         Original published format: JP 23775193
JP1994022226716.09.1994         Original published format: JP 22226794
[1995/13]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0645632
Date:29.03.1995
Language:EN
[1995/13]
Type: B1 Patent specification 
No.:EP0645632
Date:02.12.1998
Language:EN
[1998/49]
Search report(s)(Supplementary) European search report - dispatched on:EP23.12.1994
ClassificationIPC:G01N37/00
[1995/13]
CPC:
H10P90/1914 (EP,US); H10W10/181 (EP,US); Y10S148/012 (EP)
Designated contracting statesDE,   FR,   GB [1995/13]
TitleGerman:Verfahren zum Abschätzen der Menge von Bor im Kontakt-Übergangsbereich bei einem kontaktierten Wafer[1995/13]
English:Method of estimating quantity of boron at bonding interface in bonded wafer[1995/13]
French:Méthode pour estimer la quantité de bore dans la zone du bonding dans les tranches de silicium[1995/13]
Examination procedure27.04.1995Examination requested  [1995/26]
01.04.1997Despatch of a communication from the examining division (Time limit: M04)
14.07.1997Reply to a communication from the examining division
20.01.1998Despatch of communication of intention to grant (Approval: Yes)
26.05.1998Communication of intention to grant the patent
13.08.1998Fee for grant paid
13.08.1998Fee for publishing/printing paid
Opposition(s)03.09.1999No opposition filed within time limit [1999/47]
Fees paidRenewal fee
30.09.1996Renewal fee patent year 03
30.09.1997Renewal fee patent year 04
28.09.1998Renewal fee patent year 05
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Documents cited:Search[A]   DATABASE WPI Derwent World Patents Index; [A] 1
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