| EP0645632 - Method of estimating quantity of boron at bonding interface in bonded wafer [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 08.10.1999 Database last updated on 28.03.2026 | Most recent event Tooltip | 05.09.2008 | Change - representative | published on 08.10.2008 [2008/41] | Applicant(s) | For all designated states SHIN-ETSU HANDOTAI COMPANY LIMITED 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo / JP | [N/P] |
| Former [1995/13] | For all designated states SHIN-ETSU HANDOTAI COMPANY LIMITED 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo / JP | Inventor(s) | 01 /
Mitani, Kiyoshi 926-13, Yawatamachi Takasaki-shi, Gunma-ken / JP | 02 /
Katayama, Masatake 179-7, Shimotoyookamachi Takasaki-shi, Gunma-ken / JP | 03 /
Nakazawa, Kazushi 353, Onbegawa, Shinonoi Nagano-shi, Nagano-ken / JP | [1995/13] | Representative(s) | Leinweber & Zimmermann Patentanwalts-PartG mbB European Patent Attorneys Viktualienmarkt 8 80331 München / DE | [N/P] |
| Former [2008/41] | Leinweber & Zimmermann European Patent Attorneys Patentanwälte Rosental 7 80331 München / DE | ||
| Former [1995/13] | Patentanwälte Leinweber & Zimmermann Rosental 7/II Aufg. D-80331 München / DE | Application number, filing date | 94115020.3 | 23.09.1994 | [1995/13] | Priority number, date | JP19930237751 | 24.09.1993 Original published format: JP 23775193 | JP19940222267 | 16.09.1994 Original published format: JP 22226794 | [1995/13] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0645632 | Date: | 29.03.1995 | Language: | EN | [1995/13] | Type: | B1 Patent specification | No.: | EP0645632 | Date: | 02.12.1998 | Language: | EN | [1998/49] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 23.12.1994 | Classification | IPC: | G01N37/00 | [1995/13] | CPC: |
H10P90/1914 (EP,US);
H10W10/181 (EP,US);
Y10S148/012 (EP)
| Designated contracting states | DE, FR, GB [1995/13] | Title | German: | Verfahren zum Abschätzen der Menge von Bor im Kontakt-Übergangsbereich bei einem kontaktierten Wafer | [1995/13] | English: | Method of estimating quantity of boron at bonding interface in bonded wafer | [1995/13] | French: | Méthode pour estimer la quantité de bore dans la zone du bonding dans les tranches de silicium | [1995/13] | Examination procedure | 27.04.1995 | Examination requested [1995/26] | 01.04.1997 | Despatch of a communication from the examining division (Time limit: M04) | 14.07.1997 | Reply to a communication from the examining division | 20.01.1998 | Despatch of communication of intention to grant (Approval: Yes) | 26.05.1998 | Communication of intention to grant the patent | 13.08.1998 | Fee for grant paid | 13.08.1998 | Fee for publishing/printing paid | Opposition(s) | 03.09.1999 | No opposition filed within time limit [1999/47] | Fees paid | Renewal fee | 30.09.1996 | Renewal fee patent year 03 | 30.09.1997 | Renewal fee patent year 04 | 28.09.1998 | Renewal fee patent year 05 |
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