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EP0646929
European procedure
Extract from the Register of European Patents
EP About this file: EP0646929
| EP0646929 - Semiconductor integrated circuit device implemented by bipolar and field effect transistors and having stable sense amplifier [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 01.09.2000 Database last updated on 03.09.2024 | Most recent event Tooltip | 01.09.2000 | No opposition filed within time limit | published on 18.10.2000 [2000/42] | Applicant(s) | For all designated states NEC Corporation 7-1, Shiba 5-chome Minato-ku Tokyo 108-8001 / JP | [N/P] |
| Former [1999/44] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome, Minato-ku Tokyo / JP | ||
| Former [1995/14] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | Inventor(s) | 01 /
Takahashi, Hiroyuki, c/o NEC Corp. 7-1, Shiba 5-chome, Minato-ku Tokyo / JP | [1995/14] | Representative(s) | Baronetzky, Klaus, et al Splanemann Patentanwälte Partnerschaft Rumfordstrasse 7 80469 München / DE | [N/P] |
| Former [1995/14] | Baronetzky, Klaus, Dipl.-Ing., et al Patentanwälte Dipl.-Ing. R. Splanemann, Dr. B. Reitzner, Dipl.-Ing. K. Baronetzky Tal 13 D-80331 München / DE | Application number, filing date | 94115196.1 | 27.09.1994 | [1995/14] | Priority number, date | JP19930268198 | 29.09.1993 Original published format: JP 26819893 | [1995/14] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0646929 | Date: | 05.04.1995 | Language: | EN | [1995/14] | Type: | A3 Search report | No.: | EP0646929 | Date: | 29.11.1995 | Language: | EN | [1995/48] | Type: | B1 Patent specification | No.: | EP0646929 | Date: | 03.11.1999 | Language: | EN | [1999/44] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 09.10.1995 | Classification | IPC: | G11C11/419 | [1995/14] | CPC: |
G11C11/419 (EP,KR,US)
| Designated contracting states | DE, FR, GB [1995/14] | Title | German: | Mit Bipolar- und Feldeffekt-Transistoren implementierte integrierte Halbleiterschaltung mit einem stabilen Abfühlverstärker | [1999/11] | English: | Semiconductor integrated circuit device implemented by bipolar and field effect transistors and having stable sense amplifier | [1995/14] | French: | Dispositif de circuit intégré à semi-conducteur à base de transistors bipolaires et à effet de champs, comprenant un amplificateur de détection stable | [1999/11] |
| Former [1995/14] | Bipolare und mit Feldeffekt-Transistoren implementierte integrierte Halbleiterschaltung mit einem stabilen Abfühlverstarker | ||
| Former [1995/14] | Dispositif de circuit intégré à semi-conducteurs bipolaires et par des transistors à effet de champs et comprenant un amplificateur de détection stable | Examination procedure | 11.03.1996 | Examination requested [1996/19] | 20.05.1998 | Despatch of a communication from the examining division (Time limit: M04) | 22.09.1998 | Reply to a communication from the examining division | 09.02.1999 | Despatch of communication of intention to grant (Approval: Yes) | 08.03.1999 | Communication of intention to grant the patent | 25.05.1999 | Fee for grant paid | 25.05.1999 | Fee for publishing/printing paid | Opposition(s) | 04.08.2000 | No opposition filed within time limit [2000/42] | Fees paid | Renewal fee | 18.09.1996 | Renewal fee patent year 03 | 19.09.1997 | Renewal fee patent year 04 | 03.09.1998 | Renewal fee patent year 05 | 30.08.1999 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0540441 (IBM [US]) [A] 1-5* the whole document *; | [A] - NAKAMURA E.A., "A 6NS 4MB ECL I/O BICMOS SRAM WITH LV-TTL MASK OPTION", IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, NEW YORK US, vol. 35, pages 212 - 286, XP000315818 [A] 1-5 * the whole document * |