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EP0642170
European procedure
Extract from the Register of European Patents
EP About this file: EP0642170
| EP0642170 - Lateral bipolar transistor [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 09.10.1998 Database last updated on 16.09.2024 | Most recent event Tooltip | 09.10.1998 | No opposition filed within time limit | published on 25.11.1998 [1998/48] | Applicant(s) | For all designated states CANON KABUSHIKI KAISHA 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo / JP | [N/P] |
| Former [1995/10] | For all designated states CANON KABUSHIKI KAISHA 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo / JP | Inventor(s) | 01 /
Morishita, Masakazu, c/o Canon Kabushiki Kaisha 30-2, 3-chome, Shimomaruko Ohta-ku, Tokyo / JP | [1995/10] | Representative(s) | Beresford, Keith Denis Lewis, et al Beresford Crump LLP 16 High Holborn London WC1V 6BX / GB | [N/P] |
| Former [1995/10] | Beresford, Keith Denis Lewis, et al BERESFORD & Co. 2-5 Warwick Court High Holborn London WC1R 5DJ / GB | Application number, filing date | 94203106.3 | 21.02.1991 | [1995/10] | Priority number, date | JP19900042066 | 22.02.1990 Original published format: JP 4206690 | JP19900042067 | 22.02.1990 Original published format: JP 4206790 | JP19900042068 | 22.02.1990 Original published format: JP 4206890 | [1995/10] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0642170 | Date: | 08.03.1995 | Language: | EN | [1995/10] | Type: | A3 Search report | No.: | EP0642170 | Date: | 09.08.1995 | Language: | EN | [1995/32] | Type: | B1 Patent specification | No.: | EP0642170 | Date: | 03.12.1997 | Language: | EN | [1997/49] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 26.06.1995 | Classification | IPC: | H01L29/10, H01L29/735, H01L29/737 | [1997/06] | CPC: |
H01L29/1008 (EP,US);
H01L29/0895 (EP,US);
H01L29/165 (EP,US);
H01L29/735 (EP,US);
H01L29/737 (EP,US)
|
| Former IPC [1995/29] | H01L29/73, H01L29/10 | ||
| Former IPC [1995/10] | H01L29/73 | Designated contracting states | DE, FR, GB, IT, NL [1995/10] | Title | German: | Lateraler Bipolartransistor | [1995/10] | English: | Lateral bipolar transistor | [1995/10] | French: | Transistor bipolaire latéral | [1995/10] | Examination procedure | 21.12.1995 | Examination requested [1996/08] | 26.01.1996 | Despatch of a communication from the examining division (Time limit: M06) | 05.08.1996 | Reply to a communication from the examining division | 03.01.1997 | Despatch of communication of intention to grant (Approval: No) | 26.05.1997 | Despatch of communication of intention to grant (Approval: later approval) | 02.06.1997 | Communication of intention to grant the patent | 06.08.1997 | Fee for grant paid | 06.08.1997 | Fee for publishing/printing paid | Parent application(s) Tooltip | EP91301383.5 / EP0443852 | Opposition(s) | 04.09.1998 | No opposition filed within time limit [1998/48] | Fees paid | Renewal fee | 04.11.1994 | Renewal fee patent year 03 | 04.11.1994 | Renewal fee patent year 04 | 04.11.1994 | Renewal fee patent year 05 | 19.02.1996 | Renewal fee patent year 06 | 19.02.1997 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XY] - R.L. THORNTON ET AL., IEEE TRANSACTIONS ON ELECTRON DEVICES, (198910), vol. 36, no. 10, pages 2156 - 2164, XP000095528 [X] 1-6 * figures 1-3 * [Y] 7,8 DOI: http://dx.doi.org/10.1109/16.40895 | [Y] - G.L. PATTON ET AL., 1989 SYPOSIUM ON VLSI TECHNOLOGY, (198905), pages 95 - 96 [Y] 7 * the whole document * | [Y] - P. VAN HALEN ET AL., IEEE TRANSACTIONS ON ELECTRON DEVICES, (198507), vol. ED-32, no. 7, pages 1307 - 1313 [Y] 8 * figure 2 * | Examination | - INTRODUCTION TO SOLID STATE PHYSICS, 3rd EDITION, KITTEL, J.WILEY & SONS, 1967, page 302 |