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EP0644479
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EP About this file: EP0644479
| EP0644479 - Multiple resonant tunneling circuits for signed digit multi-valued logic operations [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 07.04.2000 Database last updated on 28.03.2026 | Most recent event Tooltip | 07.04.2000 | Application deemed to be withdrawn | published on 24.05.2000 [2000/21] | Applicant(s) | For all designated states Texas Instruments Incorporated 13500 North Central Expressway Dallas, Texas 75265 / US | [N/P] |
| Former [1995/12] | For all designated states TEXAS INSTRUMENTS INCORPORATED 13500 North Central Expressway Dallas Texas 75265 / US | Inventor(s) | 01 /
Taddiken, Albert H. 105 Settlers Bend Mc Kinney, TX 75069 / US | 02 /
Micheel, Lutz J. 6825 Longford Road Dayton, OH 45424-3345 / US | [1995/12] | Representative(s) | Nettleton, John Victor, et al Abel & Imray 20 Red Lion Street London WC1R 4PQ / GB | [N/P] |
| Former [1995/12] | Nettleton, John Victor, et al Abel & Imray Northumberland House 303-306 High Holborn London, WC1V 7LH / GB | Application number, filing date | 94303700.2 | 24.05.1994 | [1995/12] | Priority number, date | US19930066362 | 24.05.1993 Original published format: US 66362 | [1995/12] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0644479 | Date: | 22.03.1995 | Language: | EN | [1995/12] | Type: | A3 Search report | No.: | EP0644479 | Date: | 11.12.1996 | [1996/50] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 24.10.1996 | Classification | IPC: | G06F7/49, H03K23/00, H01L29/73 | [1995/12] | CPC: |
B82Y10/00 (EP,US);
G06F7/4824 (EP,US)
| Designated contracting states | DE, FR, GB, IT, NL [1995/12] | Title | German: | Schaltungen unter Verwendung des Tunneleffektes mit mehrfacher Resonanz für mehrwertige Logikoperationen mit gekennzeichneten Ziffern | [1995/12] | English: | Multiple resonant tunneling circuits for signed digit multi-valued logic operations | [1995/12] | French: | Circuits à effet tunnel résonnant multiple pour des opérations logiques multivalentes exprimées à l'aide de chiffres signés | [1995/12] | Examination procedure | 06.06.1997 | Examination requested [1997/32] | 20.05.1999 | Despatch of a communication from the examining division (Time limit: M06) | 01.12.1999 | Application deemed to be withdrawn, date of legal effect [2000/21] | 07.01.2000 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2000/21] | Fees paid | Renewal fee | 09.05.1996 | Renewal fee patent year 03 | 12.05.1997 | Renewal fee patent year 04 | 11.05.1998 | Renewal fee patent year 05 | 12.05.1999 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XDY] MICHEEL L J: "HETEROJUNCTION BIPOLAR TECHNOLOGY FOR EMITTER-COUPLED MULTIPLE-VALUED LOGIC IN GIGAHERTZ ADDERS AND MULTIPLIERS", PROCEEDINGS OF THE 22D INTERNATIONAL SYMPOSIUM ON MULTIPLE VALUED LOGIC, SENDAI, JAPAN, 27 May 1992 (1992-05-27) - 29 May 1992 (1992-05-29), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 18 - 26, XP000356418 [XD] 1-3,10 * page 21 - page 24 * [Y] 4,7-9 DOI: http://dx.doi.org/10.1109/ISMVL.1992.186773 | [YD] MICHITAKA KAMEYAMA ET AL: "MODULAR DESIGN OF MULTIPLE-VALUED ARITHMETIC VLSI SYSTEM USING SIGNED-DIGIT NUMBER SYSTEM", PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON MULTIPLE VALUED LOGIC, CHARLOTTE, NORTH CAROLINA, USA, 23 May 1990 (1990-05-23) - 25 May 1990 (1990-05-25), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 355 - 362, XP000166647 [YD] 4,7,8 * page 356, paragraph ADDITION * * page 358, column R, paragraph A; figures 5,6 * | [XA] FRAZIER G. ET AL.: "TP 11.4: Nanoelectronic circuits using resonant tunneling transistors and diodes", IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCE, 25 February 1993 (1993-02-25), NEW YORK US, pages 174 - 175, XP000388068 [X] 10 * the whole document * [A] 5,6,9 DOI: http://dx.doi.org/10.1109/ISSCC.1993.280009 | [Y] F. CAPASSO ET AL.: "Quantum-Effect Devices, in HIGH-SPEED SEMICONDUCTOR DEVICES", 1990, EDITED BY S.M.SZE, WILEY-INTERSCIENCE PUBLICATION, JOHN WILEY & SONS INC., NEW YORK, USA, XP002014125 [Y] 9 * Pages 465-520; page 497, paragraph 3 - page 499, paragraph 1 * |