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EP0637063
European procedure
Extract from the Register of European Patents
EP About this file: EP0637063
| EP0637063 - Method for depositing silicon nitride on silicium surfaces [Right-click to bookmark this link] | |||
| Former [1995/05] | Method of in-situ cleaning of native oxide from silicon surfaces | ||
| [1998/42] | Status | Opposition rejected Status updated on 31.01.2003 Database last updated on 31.08.2024 | Most recent event Tooltip | 12.09.2008 | Change - representative | published on 15.10.2008 [2008/42] | Applicant(s) | For all designated states Applied Materials, Inc. 3050 Bowers Avenue M/S 2061 Santa Clara, California 95054-3299 / US | [N/P] |
| Former [1999/44] | For all designated states APPLIED MATERIALS, INC. 3050 Bowers Avenue, M/S 2061 Santa Clara, California 95054-3299 / US | ||
| Former [1995/05] | For all designated states APPLIED MATERIALS, INC. 3050 Bowers Avenue Santa Clara California 95054-3299 / US | Inventor(s) | 01 /
Hey, H. Peter W. 1483 Myrtle Avenue San Jose, CA 95118 / US | 02 /
Carlson, David 2308 Dundee Drive Santa Clara, CA 95051 / US | [1995/05] | Representative(s) | Hess, Peter K. G., et al Bardehle Pagenberg Partnerschaft mbB Patentanwälte, Rechtsanwälte Postfach 86 06 20 81633 München / DE | [N/P] |
| Former [2008/42] | Hess, Peter K. G., et al Patent- und Rechtsanwälte Bardehle . Pagenberg . Dost . Altenburg . Geissler Postfach 86 06 20 81633 München / DE | ||
| Former [2001/10] | Hess, Peter K., Dipl.-Phys., et al Patent- und Rechtsanwälte Bardehle - Pagenberg - Dost Altenburg - Geissler -Isenbruck Galileiplatz 1 81679 München / DE | ||
| Former [1995/05] | Bayliss, Geoffrey Cyril, et al BOULT, WADE & TENNANT 27 Furnival Street London EC4A 1PQ / GB | Application number, filing date | 94304905.6 | 04.07.1994 | [1995/05] | Priority number, date | US19930101502 | 30.07.1993 Original published format: US 101502 | [1995/05] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0637063 | Date: | 01.02.1995 | Language: | EN | [1995/05] | Type: | B1 Patent specification | No.: | EP0637063 | Date: | 03.11.1999 | Language: | EN | [1999/44] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 05.12.1994 | Classification | IPC: | H01L21/306, H01L21/318 | [1995/05] | CPC: |
H01L21/02046 (EP,US);
H01L21/3003 (EP,US);
H01L21/3185 (US);
H01L21/0217 (EP);
Y10S438/906 (EP,US)
| Designated contracting states | DE, FR, GB, IT, NL [1995/05] | Title | German: | Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen | [1998/42] | English: | Method for depositing silicon nitride on silicium surfaces | [1998/42] | French: | Procédé de dépôt de nitrure de silicium sur des surfaces de silicium | [1998/42] |
| Former [1995/05] | Verfahren zur Reinigung der natürlichen Oxyd-Schicht auf Siliziumoberflächen | ||
| Former [1995/05] | Method of in-situ cleaning of native oxide from silicon surfaces | ||
| Former [1995/05] | Procédé pour le nettoyage in situ de l'oxyde natif de surfaces de silicium | Examination procedure | 23.06.1995 | Examination requested [1995/34] | 01.09.1995 | Despatch of a communication from the examining division (Time limit: M04) | 03.01.1996 | Reply to a communication from the examining division | 24.06.1996 | Despatch of a communication from the examining division (Time limit: M04) | 30.09.1996 | Reply to a communication from the examining division | 17.06.1998 | Date of oral proceedings | 20.07.1998 | Minutes of oral proceedings despatched | 10.09.1998 | Despatch of communication of intention to grant (Approval: Yes) | 10.02.1999 | Communication of intention to grant the patent | 10.05.1999 | Fee for grant paid | 10.05.1999 | Fee for publishing/printing paid | Opposition(s) | Opponent(s) | 01
03.08.2000
ADMISSIBLE Koch, Alexander W., Prof. Dr.-Ing. Theresienstr. 90/N5 80333 München / DE Opponent's representative Hoffmann Eitle Patent- und Rechtsanwälte PartmbB Arabellastraße 30 81925 München / DE | [N/P] |
| Former [2000/40] | |||
| Opponent(s) | 01
03.08.2000
ADMISSIBLE Koch, Alexander W., Prof. Dr.-Ing. Theresienstr. 90/N5 80333 München / DE Opponent's representative HOFFMANN - EITLE Patent- und Rechtsanwälte Arabellastrasse 4 81925 München / DE | 22.09.2000 | Invitation to proprietor to file observations on the notice of opposition | 02.04.2001 | Reply of patent proprietor to notice(s) of opposition | 21.09.2001 | Despatch of a communication from the opposition division (Time limit: M01) | 18.10.2001 | Reply to a communication from the opposition division | 05.11.2001 | Despatch of a communication from the opposition division (Time limit: M04) | 23.11.2001 | Reply to a communication from the opposition division | 17.06.2002 | Date of despatch of rejection of opposition | 27.06.2002 | Legal effect of rejection of opposition [2003/12] | Fees paid | Renewal fee | 10.06.1996 | Renewal fee patent year 03 | 12.05.1997 | Renewal fee patent year 04 | 04.05.1998 | Renewal fee patent year 05 | 23.08.1999 | Renewal fee patent year 06 | Penalty fee | Additional fee for renewal fee | 01.08.1999 | 06 M06 Fee paid on 23.08.1999 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XY]US4855258 (ALLMAN DERRYL D J [US], et al) [X] 1-3,6,11,12,14,15,20-22 * column 4, line 6 - line 34 * * idem * [Y] 23,24; | [Y]EP0430030 (OKI ELECTRIC IND CO LTD [JP]) [Y] 5,6,14,15 * column 7, line 13 - column 8, line 8 *; | [YX]US5032545 (DOAN TRUNG T [US], et al) [Y] 23,24 * column 3, line 58 - column 5, line 60 * * idem *[X] 30; | [XY] - YAMAZAKI ET AL, "Investigation of thermal removal of native oxide from Si (100) surfaces in Hydrogen for low-temperature Si CVD epitaxy", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MANCHESTER, NEW HAMPSHIRE US, (199204), vol. 139, no. 4, doi:doi:10.1149/1.2069361, pages 1175 - 1180, XP000359232 [X] 1-4,11-13 * pages 1175-1176, section "Experimental" * * idem * [Y] 5,6,14,15 DOI: http://dx.doi.org/10.1149/1.2069361 | [A] - SAITO ET AL, "Effect of silicon surface cleaning on the initial stage of seelctive titanium silicide chemical vapor deposition", JAPANESE JOURNAL OF APPLIED PHYSICS, SUPPLEMENTS. 21ST CONF. ON SOLID STATE DEVICES AND MATERIALS, TOKYO JA, (198908), pages 541 - 542 [A] 7,16,26 * page 541, paragraph 2 * | [A] - AOYAMA ET AL, "Removing native oxide from Si (001) surfaces using photoexcited fluorine gas", APPLIED PHYSICS LETTERS., NEW YORK US, (19911111), vol. 59, no. 20, doi:doi:10.1063/1.105930, pages 2576 - 2578, XP000350209 [A] 10,19 * page 2577, column L, paragraph 2 * DOI: http://dx.doi.org/10.1063/1.105930 | [A] - KUNII ET AL, "Si surface cleaning by Si2H6-H2 gas etching and its effects on solid-phase epitaxy", JAPANESE JOURNAL OF APPLIED PHYSICS., TOKYO JP, (198711), vol. 26, no. 11, doi:doi:10.1143/JJAP.26.1816, pages 1816 - 1822, XP002067781 [A] 7,8,16,17,26,27 * abstract * DOI: http://dx.doi.org/10.1143/JJAP.26.1816 | [X] - RACANELLI ET AL, "Alternate surface cleaning approaches for ultra high vacuum chemical vapor deposition epitaxy of Si and GeSi", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MANCHESTER, NEW HAMPSHIRE US, (199112), vol. 138, no. 12, pages 3783 - 3789, XP000244067 [X] 1-5,9,11-14,18 * page 3784, column R, paragraph 1 * | [X] - MARTIN ET AL, "LPCVD Si3N4 growth retardation on silicon native oxide campared with in situ HF vapour-deglazed silicon substrates", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, LONDON GB, (199111), vol. 6, no. 11, pages 1100 - 1102 [X] 30 * figure 2 * |