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Extract from the Register of European Patents

EP About this file: EP0680119

EP0680119 - Fabrication process for semiconductor optical device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  09.05.2002
Database last updated on 24.07.2024
Most recent event   Tooltip09.05.2002No opposition filed within time limitpublished on 26.06.2002  [2002/26]
Applicant(s)For all designated states
NEC Corporation
7-1, Shiba 5-chome Minato-ku
Tokyo 108-8001 / JP
[N/P]
Former [2001/27]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome, Minato-ku
Tokyo / JP
Former [1995/44]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Sakata, Yasutaka, c/o NEC Corporation
7-1, Shiba 5-chome
Minato-ku, Tokyo / JP
[1995/44]
Representative(s)Glawe, Delfs, Moll
Partnerschaft mbB von
Patent- und Rechtsanwälten
Postfach 26 01 62
80058 München / DE
[N/P]
Former [1995/44]Glawe, Delfs, Moll & Partner
Patentanwälte Postfach 26 01 62
D-80058 München / DE
Application number, filing date95106383.327.04.1995
[1995/44]
Priority number, dateJP1994011188428.04.1994         Original published format: JP 11188494
[1995/44]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0680119
Date:02.11.1995
Language:EN
[1995/44]
Type: B1 Patent specification 
No.:EP0680119
Date:04.07.2001
Language:EN
[2001/27]
Search report(s)(Supplementary) European search report - dispatched on:EP11.08.1995
ClassificationIPC:H01L33/00, H01S5/34
[2000/31]
CPC:
H01S5/0265 (EP,US); H01S5/026 (EP,US); H01S5/04256 (EP,US);
H01S5/2077 (EP,US); H01S5/2272 (EP,US); H01S5/4068 (EP,US);
H01S5/4087 (EP,US); Y10S148/095 (EP); Y10S438/925 (EP) (-)
Former IPC [2000/29]H01S5/02
Former IPC [1995/44]H01S3/025
Designated contracting statesDE,   FR,   GB,   NL [1995/44]
TitleGerman:Herstellungsverfahren für eine optische Halbleitervorrichtung[1995/44]
English:Fabrication process for semiconductor optical device[1995/44]
French:Procédé de fabrication d'un dispositif optique à semi-conducteur[1995/44]
Examination procedure28.08.1995Examination requested  [1995/44]
10.10.1996Despatch of a communication from the examining division (Time limit: M06)
21.04.1997Reply to a communication from the examining division
28.11.1997Despatch of a communication from the examining division (Time limit: M06)
08.06.1998Reply to a communication from the examining division
20.01.1999Despatch of a communication from the examining division (Time limit: M06)
02.07.1999Reply to a communication from the examining division
04.09.2000Despatch of communication of intention to grant (Approval: No)
19.10.2000Despatch of communication of intention to grant (Approval: later approval)
03.11.2000Communication of intention to grant the patent
09.01.2001Fee for grant paid
09.01.2001Fee for publishing/printing paid
Opposition(s)05.04.2002No opposition filed within time limit [2002/26]
Fees paidRenewal fee
21.04.1997Renewal fee patent year 03
20.04.1998Renewal fee patent year 04
19.04.1999Renewal fee patent year 05
14.04.2000Renewal fee patent year 06
19.04.2001Renewal fee patent year 07
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Patent Court
See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XA]EP0558089  (HITACHI LTD [JP]) [X] 1,3 * column 5, line 1 - line 12 * * column 11, line 11 - line 37 * * column 13, line 45 - column 14, line 33; figures 1-3 * [A] 2,4,2,4;
 [A]JPH04303982  ;
 [A]US4961198  (ISHINO MASATO [JP], et al) [A] 1 * column 7; figure 12 *;
 [A]EP0501751  (NEC CORP [JP]) [A] 1 * the whole document *
 [DA]  - M. AOKI ET AL, "Novel structure MQW electroabsorption modulator DFB laser integrated device fabricated by selective area MOCVD growth", ELECTRONICS LETTERS, STEVENAGE GB, (19911107), vol. 27, no. 23, pages 2138 - 2140, XP000268347 [DA] 1-4 * the whole document *
 [DA]  - T. KATO ET AL, "DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPE", ELECTRONICS LETTERS, STEVENAGE GB, (19920116), vol. 28, no. 2, pages 153 - 154, XP000280599 [DA] 1-4 * the whole document *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19930318), vol. 17, no. 128, Database accession no. (E - 1333), & JP04303982 A 00000000 (NEC CORP) [A] 1,4 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.