EP0680119 - Fabrication process for semiconductor optical device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 09.05.2002 Database last updated on 24.07.2024 | Most recent event Tooltip | 09.05.2002 | No opposition filed within time limit | published on 26.06.2002 [2002/26] | Applicant(s) | For all designated states NEC Corporation 7-1, Shiba 5-chome Minato-ku Tokyo 108-8001 / JP | [N/P] |
Former [2001/27] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome, Minato-ku Tokyo / JP | ||
Former [1995/44] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | Inventor(s) | 01 /
Sakata, Yasutaka, c/o NEC Corporation 7-1, Shiba 5-chome Minato-ku, Tokyo / JP | [1995/44] | Representative(s) | Glawe, Delfs, Moll Partnerschaft mbB von Patent- und Rechtsanwälten Postfach 26 01 62 80058 München / DE | [N/P] |
Former [1995/44] | Glawe, Delfs, Moll & Partner Patentanwälte Postfach 26 01 62 D-80058 München / DE | Application number, filing date | 95106383.3 | 27.04.1995 | [1995/44] | Priority number, date | JP19940111884 | 28.04.1994 Original published format: JP 11188494 | [1995/44] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0680119 | Date: | 02.11.1995 | Language: | EN | [1995/44] | Type: | B1 Patent specification | No.: | EP0680119 | Date: | 04.07.2001 | Language: | EN | [2001/27] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 11.08.1995 | Classification | IPC: | H01L33/00, H01S5/34 | [2000/31] | CPC: |
H01S5/0265 (EP,US);
H01S5/026 (EP,US);
H01S5/04256 (EP,US);
H01S5/2077 (EP,US);
H01S5/2272 (EP,US);
H01S5/4068 (EP,US);
|
Former IPC [2000/29] | H01S5/02 | ||
Former IPC [1995/44] | H01S3/025 | Designated contracting states | DE, FR, GB, NL [1995/44] | Title | German: | Herstellungsverfahren für eine optische Halbleitervorrichtung | [1995/44] | English: | Fabrication process for semiconductor optical device | [1995/44] | French: | Procédé de fabrication d'un dispositif optique à semi-conducteur | [1995/44] | Examination procedure | 28.08.1995 | Examination requested [1995/44] | 10.10.1996 | Despatch of a communication from the examining division (Time limit: M06) | 21.04.1997 | Reply to a communication from the examining division | 28.11.1997 | Despatch of a communication from the examining division (Time limit: M06) | 08.06.1998 | Reply to a communication from the examining division | 20.01.1999 | Despatch of a communication from the examining division (Time limit: M06) | 02.07.1999 | Reply to a communication from the examining division | 04.09.2000 | Despatch of communication of intention to grant (Approval: No) | 19.10.2000 | Despatch of communication of intention to grant (Approval: later approval) | 03.11.2000 | Communication of intention to grant the patent | 09.01.2001 | Fee for grant paid | 09.01.2001 | Fee for publishing/printing paid | Opposition(s) | 05.04.2002 | No opposition filed within time limit [2002/26] | Fees paid | Renewal fee | 21.04.1997 | Renewal fee patent year 03 | 20.04.1998 | Renewal fee patent year 04 | 19.04.1999 | Renewal fee patent year 05 | 14.04.2000 | Renewal fee patent year 06 | 19.04.2001 | Renewal fee patent year 07 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]EP0558089 (HITACHI LTD [JP]) [X] 1,3 * column 5, line 1 - line 12 * * column 11, line 11 - line 37 * * column 13, line 45 - column 14, line 33; figures 1-3 * [A] 2,4,2,4; | [A]JPH04303982 ; | [A]US4961198 (ISHINO MASATO [JP], et al) [A] 1 * column 7; figure 12 *; | [A]EP0501751 (NEC CORP [JP]) [A] 1 * the whole document * | [DA] - M. AOKI ET AL, "Novel structure MQW electroabsorption modulator DFB laser integrated device fabricated by selective area MOCVD growth", ELECTRONICS LETTERS, STEVENAGE GB, (19911107), vol. 27, no. 23, pages 2138 - 2140, XP000268347 [DA] 1-4 * the whole document * | [DA] - T. KATO ET AL, "DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPE", ELECTRONICS LETTERS, STEVENAGE GB, (19920116), vol. 28, no. 2, pages 153 - 154, XP000280599 [DA] 1-4 * the whole document * | [A] - PATENT ABSTRACTS OF JAPAN, (19930318), vol. 17, no. 128, Database accession no. (E - 1333), & JP04303982 A 00000000 (NEC CORP) [A] 1,4 * abstract * |