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Extract from the Register of European Patents

EP About this file: EP0686980

EP0686980 - Semiconductor memory device having means for replacing defective memory cells [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  22.10.1999
Database last updated on 02.11.2024
Most recent event   Tooltip22.10.1999No opposition filed within time limitpublished on 08.12.1999 [1999/49]
Applicant(s)For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku Kawasaki-shi
Kanagawa 211 / JP
For all designated states
FUJITSU VLSI LIMITED
1844-2, Kozoji-cho 2-chome Kasugai-shi
Aichi 487 / JP
[N/P]
Former [1995/50]For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
For all designated states
FUJITSU VLSI LIMITED
1844-2, Kozoji-cho 2-chome
Kasugai-shi Aichi 487 / JP
Inventor(s)01 / Kasa, Yasushi, c/o Fujitsu Limited
Patent Department, 1015 Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
02 / Takemae, Yoshihiro, c/o Fujitsu Limited
Patent Department, 1015 Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
03 / Nagasawa, Masanori, c/o Fujitsu Limited
Patent Department, 1015 Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
04 / Arayama, Yuji, c/o Fujitsu Limited
Patent Department, 1015 Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
05 / Terui, Akira, c/o Fujitsu Limited
Patent Department, 1015 Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
06 / Araki, Sunao c/o Fujitsu Ltd.
Patent Department, 1015 Kamikodanaka Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
[1995/50]
Representative(s)Stebbing, Timothy Charles, et al
Haseltine Lake LLP
Lincoln House, 5th Floor
300 High Holborn
London WC1V 7JH / GB
[N/P]
Former [1995/50]Stebbing, Timothy Charles, et al
Haseltine Lake & Co. Hazlitt House 28 Southampton Buildings Chancery Lane
London WC2A 1AT / GB
Application number, filing date95111838.930.01.1990
[1995/50]
Priority number, dateJP1989002133731.01.1989         Original published format: JP 2133789
JP1989003043509.02.1989         Original published format: JP 3043589
JP1989003043609.02.1989         Original published format: JP 3043689
JP1989003156210.02.1989         Original published format: JP 3156289
JP1989003156110.02.1989         Original published format: JP 3156189
JP1989003148410.02.1989         Original published format: JP 3148489
[1995/50]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0686980
Date:13.12.1995
Language:EN
[1995/50]
Type: B1 Patent specification 
No.:EP0686980
Date:16.12.1998
Language:EN
[1998/51]
Search report(s)(Supplementary) European search report - dispatched on:EP19.10.1995
ClassificationIPC:G11C29/00, G06F11/20, G11C11/00
[1998/51]
CPC:
G11C29/76 (EP); G11C11/005 (EP); G11C11/407 (EP);
G11C17/16 (EP); G11C29/822 (EP); G06F11/006 (EP)
Former IPC [1995/50]G11C29/00, G06F11/20
Designated contracting statesDE [1998/32]
Former [1995/50]DE,  FR,  GB 
TitleGerman:Halbleiterspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen[1995/50]
English:Semiconductor memory device having means for replacing defective memory cells[1995/50]
French:Mémoire à semi-conducteur avec dispositif pour substituer les éléments défectueux[1995/50]
Examination procedure07.06.1996Examination requested  [1996/32]
18.04.1997Despatch of a communication from the examining division (Time limit: M06)
27.10.1997Reply to a communication from the examining division
11.12.1997Despatch of communication of intention to grant (Approval: Yes)
22.06.1998Communication of intention to grant the patent
15.09.1998Fee for grant paid
15.09.1998Fee for publishing/printing paid
Parent application(s)   TooltipEP90300935.5  / EP0383452
Opposition(s)17.09.1999No opposition filed within time limit [1999/49]
Fees paidRenewal fee
22.08.1995Renewal fee patent year 03
22.08.1995Renewal fee patent year 04
22.08.1995Renewal fee patent year 05
22.08.1995Renewal fee patent year 06
25.01.1996Renewal fee patent year 07
28.01.1997Renewal fee patent year 08
22.01.1998Renewal fee patent year 09
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Documents cited:Search[A]EP0333207  (TOSHIBA KK [JP], et al) [A] 1,2,9-14,16-20;
 [A]DE3906897  (MITSUBISHI ELECTRIC CORP [JP]) [A] 1,3,9,13,16-20;
 [A]EP0031386  (FUJITSU LTD [JP]) [A] 1,4,9,16-20;
 [A]US4564924  (HAEUSELE HANS [DE])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.