EP0706243 - Distributed feedback semiconductor laser and method for producing the same [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 05.11.2004 Database last updated on 31.08.2024 | Most recent event Tooltip | 19.06.2009 | Change - representative | published on 22.07.2009 [2009/30] | Applicant(s) | For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Oaza Kadoma Kadoma-shi Osaka 571-8501 / JP | [2008/47] |
Former [1996/15] | For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Ohaza Kadoma Kadoma-shi, Osaka 571 / JP | Inventor(s) | 01 /
Kito, Masahiro A-201, 2-23, Higashitoyonaka-cho Toyonaka-shi, Osaka / JP | 02 /
Matsui, Yasushi 8-23, Kansozuka-cho Neyagawa-shi, Osaka / JP | 03 /
Ishino, Masato 5-7-1-6, Tawara-dai Shijyonawate-shi, Osaka / JP | 04 /
Nakamura, Shinji 1-4-14, Asukano-minami Ikoma-shi, Nara-ken / JP | 05 /
Otsuka, Nobuyuki 148-18, Aza Nakamichi, Sasabe Kawanishi-shi, Hyogo-ken / JP | [1996/15] | Representative(s) | Kügele, Bernhard, et al Novagraaf International SA Chemin de l'Echo 3 1213 Onex / CH | [N/P] |
Former [2009/30] | Kügele, Bernhard, et al Novagraaf International SA Avenue de Pailly 25 1220 Les Avanchets-Genève / CH | ||
Former [1996/15] | Kügele, Bernhard, et al NOVAPAT-CABINET CHEREAU, 9, Rue du Valais CH-1202 Genève / CH | Application number, filing date | 95115272.7 | 28.09.1995 | [1996/15] | Priority number, date | JP19940233837 | 28.09.1994 Original published format: JP 23383794 | JP19950016863 | 03.02.1995 Original published format: JP 1686395 | [1996/15] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0706243 | Date: | 10.04.1996 | Language: | EN | [1996/15] | Type: | A3 Search report | No.: | EP0706243 | Date: | 13.11.1996 | [1996/46] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 24.09.1996 | Classification | IPC: | H01S3/00, H01S3/085, H01S3/025, H01L21/208, H01L21/20, C30B25/12, G02B6/12 | [1996/15] | CPC: |
B82Y20/00 (EP,US);
H01L21/02392 (EP,US);
H01L21/0243 (EP,US);
H01L21/02461 (EP,US);
H01L21/02463 (EP,US);
H01L21/02505 (EP,US);
H01L21/02513 (EP,US);
H01L21/02543 (EP,US);
H01L21/02546 (EP,US);
H01L21/0262 (EP,US);
H01S5/0265 (EP,US);
H01S5/12 (EP,US);
H01S5/1228 (EP,US);
H01S5/125 (EP,US);
H01S5/06256 (EP,US);
H01S5/1231 (EP,US);
H01S5/2077 (EP,US);
H01S5/2081 (EP,US);
H01S5/2272 (EP,US);
H01S5/2275 (EP,US);
H01S5/32391 (EP,US);
| Designated contracting states | DE, FR, GB [1996/15] | Title | German: | Halbleiterlaser mit verteilter Rückkopplung und Herstellungsverfahren | [1996/15] | English: | Distributed feedback semiconductor laser and method for producing the same | [1996/15] | French: | Laser à semi-conducteur à réflecteur distribué et méthode de fabrication | [1996/15] | Examination procedure | 19.10.1995 | Examination requested [1996/15] | 31.10.2000 | Despatch of a communication from the examining division (Time limit: M04) | 16.02.2001 | Reply to a communication from the examining division | 20.07.2001 | Despatch of a communication from the examining division (Time limit: M06) | 17.01.2002 | Reply to a communication from the examining division | 14.11.2002 | Despatch of a communication from the examining division (Time limit: M04) | 12.03.2003 | Reply to a communication from the examining division | 04.02.2004 | Despatch of a communication from the examining division (Time limit: M04) | 15.06.2004 | Application deemed to be withdrawn, date of legal effect [2004/52] | 19.07.2004 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2004/52] | Divisional application(s) | EP01103522.7 / EP1130715 | EP01103523.5 / EP1130716 | Fees paid | Renewal fee | 08.09.1997 | Renewal fee patent year 03 | 16.09.1998 | Renewal fee patent year 04 | 20.09.1999 | Renewal fee patent year 05 | 06.09.2000 | Renewal fee patent year 06 | 06.09.2001 | Renewal fee patent year 07 | 24.09.2002 | Renewal fee patent year 08 | 17.09.2003 | Renewal fee patent year 09 | Penalty fee | Additional fee for renewal fee | 30.09.2004 | 10   M06   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]JPH02159086 ; | [A]JPH01106489 ; | [A]JPH02143580 ; | [XA]JPH03147386 ; | [A]JPH06164051 ; | [Y]JPH03145780 ; | [A]GB2146259 (NEC CORP) [A] 20-22,29 * the whole document *; | [A]EP0507956 (OPTICAL MEASUREMENT TECHNOLOGY [JP]) [A] 1,3,4,11-13,20,21,24,25,27,30,31,33,35 * page 8, column 33 - page 9, column 40; figure 6 *; | [XA]EP0513745 (CSELT CENTRO STUDI LAB TELECOM [IT]) [X] 1,24,30 * the whole document * [A] 11-13,27; | [A]EP0601890 (FURUKAWA ELECTRIC CO LTD [JP]) [A] 20,21,29 * column 5 *; | [PX]DE4429586 (MATSUSHITA ELECTRIC IND CO LTD [JP]) [PX] 1-4,24-26,28 * the whole document *; | [XA] - PATENT ABSTRACTS OF JAPAN, (19900907), vol. 014, no. 414, Database accession no. (E - 0975), & JP02159086 A 19900619 (FUJITSU LTD) [X] 1-3,5,6,24,25,28,30-34 * abstract * [A] 7-12,14,15,20,21,27,29,35-37,39-55 | [A] - PATENT ABSTRACTS OF JAPAN, (19890803), vol. 013, no. 346, Database accession no. (E - 798), & JP01106489 A 19890424 (FUJITSU LTD) [A] 1,24,30 * abstract * | [A] - PATENT ABSTRACTS OF JAPAN, (19900823), vol. 014, no. 391, Database accession no. (E - 0968), & JP02143580 A 19900601 (FURUKAWA ELECTRIC CO LTD:THE) [A] 1,24,30 * abstract * | [A] - TANBUN-EK T ET AL, "EFFECTS OF STRAIN IN MULTIPLE QUANTUM WELL DISTRIBUTED FEEDBACK LASERS", APPLIED PHYSICS LETTERS, (19901119), vol. 57, no. 21, pages 2184 - 2186, XP000178217 [A] 1,7-9 * the whole document * DOI: http://dx.doi.org/10.1063/1.103929 | [A] - HUANG K H ET AL, "GROWTH AND PROPERTIES OF INASP ALLOYS PREPARED BY ORGANOMETALLIC VAPOR PHASE EPITAXY", JOURNAL OF CRYSTAL GROWTH, (19881002), vol. 92, no. 3/04, pages 547 - 552, XP000072992 [A] 20,21,29 * the whole document * DOI: http://dx.doi.org/10.1016/0022-0248(88)90040-1 | [XA] - PATENT ABSTRACTS OF JAPAN, (19910918), vol. 015, no. 371, Database accession no. (E - 1113), & JP03147386 A 19910624 (CANON INC) [X] 39,43,44,49,50 * abstract * [A] 40,45-48,51-55 | [A] - MASAHIRO AOKI ET AL, "INGAAS/INGAASP MQW ELECTROABSORPTION MODULATOR INTEGRATED WITH A DFB LASER FABRICATED BY BAND-GAP ENERGY CONTROL SELECTIVE AREA MOCVD", IEEE JOURNAL OF QUANTUM ELECTRONICS, (19930601), vol. 29, no. 6, pages 2088 - 2096, XP000397650 [A] 39-59 * figure 8 * DOI: http://dx.doi.org/10.1109/3.234473 | [A] - SI W ET AL, "THEORETICAL ANALYSIS OF DFB LASER INTEGRATED WITH EA MODULATOR", INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, (19940823), pages 247 - 249, XP000543911 [A] 39,52-55 * the whole document * | [A] - PATENT ABSTRACTS OF JAPAN, (19940908), vol. 018, no. 480, Database accession no. (E - 1603), & JP06164051 A 19940610 (MITSUBISHI ELECTRIC CORP) [A] 39,52-55 * abstract * | [YA] - T. SASAKI ET AL, "10 wavelength MQW-DBR lasers fabricated by selective MOVPE growth", ELECTRONICS LETTERS, STEVENAGE GB, (19940512), vol. 30, no. 10, pages 785 - 786, XP002013388 [Y] 56-59 * the whole document * [A] 40-55 | [Y] - PATENT ABSTRACTS OF JAPAN, (19910917), vol. 015, no. 367, Database accession no. (E - 1112), & JP03145780 A 19910620 (MITSUBISHI ELECTRIC CORP) [Y] 56-59 * abstract * |