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EP About this file: EP0706243

EP0706243 - Distributed feedback semiconductor laser and method for producing the same [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 05.11.2004 Database last updated on 31.08.2024
Most recent event Tooltip	19.06.2009	Change - representative	published on 22.07.2009 [2009/30]
Applicant(s)	For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Oaza Kadoma Kadoma-shi Osaka 571-8501 / JP
	[2008/47]
Former [1996/15]	For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Ohaza Kadoma Kadoma-shi, Osaka 571 / JP
Inventor(s)	01 / Kito, Masahiro A-201, 2-23, Higashitoyonaka-cho Toyonaka-shi, Osaka / JP
	02 / Matsui, Yasushi 8-23, Kansozuka-cho Neyagawa-shi, Osaka / JP
	03 / Ishino, Masato 5-7-1-6, Tawara-dai Shijyonawate-shi, Osaka / JP
	04 / Nakamura, Shinji 1-4-14, Asukano-minami Ikoma-shi, Nara-ken / JP
	05 / Otsuka, Nobuyuki 148-18, Aza Nakamichi, Sasabe Kawanishi-shi, Hyogo-ken / JP
	[1996/15]
Representative(s)	Kügele, Bernhard, et al Novagraaf International SA Chemin de l'Echo 3 1213 Onex / CH
	[N/P]
Former [2009/30]	Kügele, Bernhard, et al Novagraaf International SA Avenue de Pailly 25 1220 Les Avanchets-Genève / CH
Former [1996/15]	Kügele, Bernhard, et al NOVAPAT-CABINET CHEREAU, 9, Rue du Valais CH-1202 Genève / CH
Application number, filing date	95115272.7	28.09.1995
	[1996/15]
Priority number, date	JP19940233837	28.09.1994 Original published format: JP 23383794
	JP19950016863	03.02.1995 Original published format: JP 1686395
	[1996/15]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0706243
	Date:	10.04.1996
	Language:	EN
	[1996/15]
	Type:	A3 Search report
	No.:	EP0706243
	Date:	13.11.1996
	[1996/46]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	24.09.1996
Classification	IPC:	H01S3/00, H01S3/085, H01S3/025, H01L21/208, H01L21/20, C30B25/12, G02B6/12	[1996/15]
	CPC:	B82Y20/00 (EP,US); H01L21/02392 (EP,US); H01L21/0243 (EP,US); H01L21/02461 (EP,US); H01L21/02463 (EP,US); H01L21/02505 (EP,US); (+) H01L21/02513 (EP,US); H01L21/02543 (EP,US); H01L21/02546 (EP,US); H01L21/0262 (EP,US); H01S5/0265 (EP,US); H01S5/12 (EP,US); H01S5/1228 (EP,US); H01S5/125 (EP,US); H01S5/06256 (EP,US); H01S5/1231 (EP,US); H01S5/2077 (EP,US); H01S5/2081 (EP,US); H01S5/2272 (EP,US); H01S5/2275 (EP,US); H01S5/32391 (EP,US); H01S5/34306 (EP,US); H01S5/3434 (EP,US); H01S5/34373 (EP,US) (-)
Designated contracting states	DE, FR, GB [1996/15]
Title	German:	Halbleiterlaser mit verteilter Rückkopplung und Herstellungsverfahren	[1996/15]
	English:	Distributed feedback semiconductor laser and method for producing the same	[1996/15]
	French:	Laser à semi-conducteur à réflecteur distribué et méthode de fabrication	[1996/15]
Examination procedure	19.10.1995	Examination requested [1996/15]
	31.10.2000	Despatch of a communication from the examining division (Time limit: M04)
	16.02.2001	Reply to a communication from the examining division
	20.07.2001	Despatch of a communication from the examining division (Time limit: M06)
	17.01.2002	Reply to a communication from the examining division
	14.11.2002	Despatch of a communication from the examining division (Time limit: M04)
	12.03.2003	Reply to a communication from the examining division
	04.02.2004	Despatch of a communication from the examining division (Time limit: M04)
	15.06.2004	Application deemed to be withdrawn, date of legal effect [2004/52]
	19.07.2004	Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2004/52]
Divisional application(s)	EP01103522.7 / EP1130715
	EP01103523.5 / EP1130716
Fees paid	Renewal fee
	08.09.1997	Renewal fee patent year 03
	16.09.1998	Renewal fee patent year 04
	20.09.1999	Renewal fee patent year 05
	06.09.2000	Renewal fee patent year 06
	06.09.2001	Renewal fee patent year 07
	24.09.2002	Renewal fee patent year 08
	17.09.2003	Renewal fee patent year 09
	Penalty fee
	Additional fee for renewal fee
	30.09.2004	10 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XA]JPH02159086 ;
		[A]JPH01106489 ;
		[A]JPH02143580 ;
		[XA]JPH03147386 ;
		[A]JPH06164051 ;
		[Y]JPH03145780 ;
		[A]GB2146259 (NEC CORP) [A] 20-22,29 * the whole document *;
		[A]EP0507956 (OPTICAL MEASUREMENT TECHNOLOGY [JP]) [A] 1,3,4,11-13,20,21,24,25,27,30,31,33,35 * page 8, column 33 - page 9, column 40; figure 6 *;
		[XA]EP0513745 (CSELT CENTRO STUDI LAB TELECOM [IT]) [X] 1,24,30 * the whole document * [A] 11-13,27;
		[A]EP0601890 (FURUKAWA ELECTRIC CO LTD [JP]) [A] 20,21,29 * column 5 *;
		[PX]DE4429586 (MATSUSHITA ELECTRIC IND CO LTD [JP]) [PX] 1-4,24-26,28 * the whole document *;
		[XA] - PATENT ABSTRACTS OF JAPAN, (19900907), vol. 014, no. 414, Database accession no. (E - 0975), & JP02159086 A 19900619 (FUJITSU LTD) [X] 1-3,5,6,24,25,28,30-34 * abstract * [A] 7-12,14,15,20,21,27,29,35-37,39-55
		[A] - PATENT ABSTRACTS OF JAPAN, (19890803), vol. 013, no. 346, Database accession no. (E - 798), & JP01106489 A 19890424 (FUJITSU LTD) [A] 1,24,30 * abstract *
		[A] - PATENT ABSTRACTS OF JAPAN, (19900823), vol. 014, no. 391, Database accession no. (E - 0968), & JP02143580 A 19900601 (FURUKAWA ELECTRIC CO LTD:THE) [A] 1,24,30 * abstract *
		[A] - TANBUN-EK T ET AL, "EFFECTS OF STRAIN IN MULTIPLE QUANTUM WELL DISTRIBUTED FEEDBACK LASERS", APPLIED PHYSICS LETTERS, (19901119), vol. 57, no. 21, pages 2184 - 2186, XP000178217 [A] 1,7-9 * the whole document * DOI: http://dx.doi.org/10.1063/1.103929
		[A] - HUANG K H ET AL, "GROWTH AND PROPERTIES OF INASP ALLOYS PREPARED BY ORGANOMETALLIC VAPOR PHASE EPITAXY", JOURNAL OF CRYSTAL GROWTH, (19881002), vol. 92, no. 3/04, pages 547 - 552, XP000072992 [A] 20,21,29 * the whole document * DOI: http://dx.doi.org/10.1016/0022-0248(88)90040-1
		[XA] - PATENT ABSTRACTS OF JAPAN, (19910918), vol. 015, no. 371, Database accession no. (E - 1113), & JP03147386 A 19910624 (CANON INC) [X] 39,43,44,49,50 * abstract * [A] 40,45-48,51-55
		[A] - MASAHIRO AOKI ET AL, "INGAAS/INGAASP MQW ELECTROABSORPTION MODULATOR INTEGRATED WITH A DFB LASER FABRICATED BY BAND-GAP ENERGY CONTROL SELECTIVE AREA MOCVD", IEEE JOURNAL OF QUANTUM ELECTRONICS, (19930601), vol. 29, no. 6, pages 2088 - 2096, XP000397650 [A] 39-59 * figure 8 * DOI: http://dx.doi.org/10.1109/3.234473
		[A] - SI W ET AL, "THEORETICAL ANALYSIS OF DFB LASER INTEGRATED WITH EA MODULATOR", INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, (19940823), pages 247 - 249, XP000543911 [A] 39,52-55 * the whole document *
		[A] - PATENT ABSTRACTS OF JAPAN, (19940908), vol. 018, no. 480, Database accession no. (E - 1603), & JP06164051 A 19940610 (MITSUBISHI ELECTRIC CORP) [A] 39,52-55 * abstract *
		[YA] - T. SASAKI ET AL, "10 wavelength MQW-DBR lasers fabricated by selective MOVPE growth", ELECTRONICS LETTERS, STEVENAGE GB, (19940512), vol. 30, no. 10, pages 785 - 786, XP002013388 [Y] 56-59 * the whole document * [A] 40-55
		[Y] - PATENT ABSTRACTS OF JAPAN, (19910917), vol. 015, no. 367, Database accession no. (E - 1112), & JP03145780 A 19910620 (MITSUBISHI ELECTRIC CORP) [Y] 56-59 * abstract *

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