EP0714119 - Pattern forming process and process for preparing semiconductor device utilizing said pattern forming process [Right-click to bookmark this link] | |||
Former [1996/22] | Pattern forming process, apparatus for forming said pattern and process for preparing semiconductor device utilizing said pattern forming process | ||
[2001/40] | Status | No opposition filed within time limit Status updated on 10.10.2003 Database last updated on 24.08.2024 | Most recent event Tooltip | 04.01.2008 | Lapse of the patent in a contracting state New state(s): IT | published on 06.02.2008 [2008/06] | Applicant(s) | For all designated states CANON KABUSHIKI KAISHA 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo / JP | [N/P] |
Former [1996/22] | For all designated states CANON KABUSHIKI KAISHA 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo / JP | Inventor(s) | 01 /
Yagi, Takayuki c/o Canon K.K., 30-2, 3-chome, Shimomaruko Ohta-ku, Tokyo / JP | 02 /
Komatsu, Toshiyuki c/o Canon K.K., 30-2, 3-chome, Shimomaruko Ohta-ku, Tokyo / JP | 03 /
Sato, Yasue c/o Canon K.K., 30-2, 3-chome, Shimomaruko Ohta-ku, Tokyo / JP | 04 /
Kawate, Shinichi c/o Canon K.K., 30-2, 3-chome, Shimomaruko Ohta-ku, Tokyo / JP | [1996/22] | Representative(s) | Beresford, Keith Denis Lewis, et al Beresford Crump LLP 16 High Holborn London WC1V 6BX / GB | [N/P] |
Former [1996/22] | Beresford, Keith Denis Lewis, et al BERESFORD & Co. 2-5 Warwick Court High Holborn London WC1R 5DJ / GB | Application number, filing date | 95203233.2 | 08.05.1991 | [1996/22] | Priority number, date | JP19900117644 | 09.05.1990 Original published format: JP 11764490 | JP19900118675 | 10.05.1990 Original published format: JP 11867590 | JP19900158687 | 19.06.1990 Original published format: JP 15868790 | JP19900174443 | 03.07.1990 Original published format: JP 17444390 | JP19900308550 | 16.11.1990 Original published format: JP 30855090 | [1996/22] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0714119 | Date: | 29.05.1996 | Language: | EN | [1996/22] | Type: | A3 Search report | No.: | EP0714119 | Date: | 03.07.1996 | [1996/27] | Type: | B1 Patent specification | No.: | EP0714119 | Date: | 04.12.2002 | Language: | EN | [2002/49] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 14.05.1996 | Classification | IPC: | H01L21/033, H01L21/308, H01L21/321, G03F7/16 | [1996/23] | CPC: |
H01L21/32139 (EP,US);
G03F7/16 (EP,US);
G03F7/167 (EP,US);
G03F7/2043 (EP,US);
H01L21/3081 (EP,US);
H01L21/31144 (EP,US);
Y10S438/908 (EP,US)
(-)
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Former IPC [1996/22] | H01L21/027, G03F7/00 | Designated contracting states | AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LI, LU, NL, SE [1996/22] | Title | German: | Verfahren zur Erzeugung einer Struktur und Verfahren zum Vorbereiten einer halbleitenden Anordnung mit Hilfe dieses Verfahrens | [2001/40] | English: | Pattern forming process and process for preparing semiconductor device utilizing said pattern forming process | [2001/40] | French: | Procédé pour former un motif et procédé de préparation d'un composant semi-conducteur utilisant ledit procédé | [2001/40] |
Former [1996/22] | Verfahren und Einrichtung zur Erzeugung einer Struktur und Verfahren zum Vorbereiten einer halbleitenden Anordnung mit Hilfe dieses Verfahrens | ||
Former [1996/22] | Pattern forming process, apparatus for forming said pattern and process for preparing semiconductor device utilizing said pattern forming process | ||
Former [1996/22] | Procédé et appareillage pour former un motif et procédé de préparation d'un composant semi-conducteur utilisant ledit procédé | Examination procedure | 13.11.1996 | Examination requested [1997/02] | 03.10.1997 | Despatch of a communication from the examining division (Time limit: M06) | 13.05.1998 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time | 21.07.1998 | Reply to a communication from the examining division | 08.11.1999 | Despatch of a communication from the examining division (Time limit: M06) | 11.05.2000 | Reply to a communication from the examining division | 25.09.2001 | Despatch of communication of intention to grant (Approval: Yes) | 07.05.2002 | Communication of intention to grant the patent | 19.07.2002 | Fee for grant paid | 19.07.2002 | Fee for publishing/printing paid | Parent application(s) Tooltip | EP91304134.9 / EP0456479 | Opposition(s) | 05.09.2003 | No opposition filed within time limit [2003/48] | Request for further processing for: | 21.07.1998 | Request for further processing filed | 21.07.1998 | Full payment received (date of receipt of payment) Request granted | 18.08.1998 | Decision despatched | Fees paid | Renewal fee | 18.12.1995 | Renewal fee patent year 03 | 18.12.1995 | Renewal fee patent year 04 | 18.12.1995 | Renewal fee patent year 05 | 22.05.1996 | Renewal fee patent year 06 | 21.05.1997 | Renewal fee patent year 07 | 20.05.1998 | Renewal fee patent year 08 | 19.05.1999 | Renewal fee patent year 09 | 22.05.2000 | Renewal fee patent year 10 | 25.05.2001 | Renewal fee patent year 11 | 27.05.2002 | Renewal fee patent year 12 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | AT | 04.12.2002 | BE | 04.12.2002 | CH | 04.12.2002 | FR | 04.12.2002 | GR | 04.12.2002 | IT | 04.12.2002 | LI | 04.12.2002 | NL | 04.12.2002 | DK | 04.03.2003 | SE | 04.03.2003 | DE | 05.03.2003 | LU | 08.05.2003 | ES | 27.06.2003 | [2008/06] |
Former [2006/14] | AT | 04.12.2002 | |
BE | 04.12.2002 | ||
CH | 04.12.2002 | ||
FR | 04.12.2002 | ||
GR | 04.12.2002 | ||
LI | 04.12.2002 | ||
NL | 04.12.2002 | ||
DK | 04.03.2003 | ||
SE | 04.03.2003 | ||
DE | 05.03.2003 | ||
LU | 08.05.2003 | ||
ES | 27.06.2003 | ||
Former [2004/39] | AT | 04.12.2002 | |
BE | 04.12.2002 | ||
CH | 04.12.2002 | ||
GR | 04.12.2002 | ||
LI | 04.12.2002 | ||
NL | 04.12.2002 | ||
DK | 04.03.2003 | ||
SE | 04.03.2003 | ||
DE | 05.03.2003 | ||
LU | 08.05.2003 | ||
ES | 27.06.2003 | ||
Former [2004/04] | AT | 04.12.2002 | |
BE | 04.12.2002 | ||
CH | 04.12.2002 | ||
GR | 04.12.2002 | ||
LI | 04.12.2002 | ||
NL | 04.12.2002 | ||
DK | 04.03.2003 | ||
SE | 04.03.2003 | ||
DE | 05.03.2003 | ||
ES | 27.06.2003 | ||
Former [2004/02] | AT | 04.12.2002 | |
BE | 04.12.2002 | ||
CH | 04.12.2002 | ||
GR | 04.12.2002 | ||
LI | 04.12.2002 | ||
NL | 04.12.2002 | ||
DK | 04.03.2003 | ||
SE | 04.03.2003 | ||
DE | 05.03.2003 | ||
Former [2003/51] | AT | 04.12.2002 | |
BE | 04.12.2002 | ||
CH | 04.12.2002 | ||
GR | 04.12.2002 | ||
LI | 04.12.2002 | ||
NL | 04.12.2002 | ||
SE | 04.03.2003 | ||
Former [2003/39] | AT | 04.12.2002 | |
CH | 04.12.2002 | ||
GR | 04.12.2002 | ||
LI | 04.12.2002 | ||
NL | 04.12.2002 | ||
SE | 04.03.2003 | ||
Former [2003/37] | AT | 04.12.2002 | |
GR | 04.12.2002 | ||
NL | 04.12.2002 | ||
SE | 04.03.2003 | ||
Former [2003/31] | GR | 04.12.2002 | |
NL | 04.12.2002 | ||
SE | 04.03.2003 | ||
Former [2003/30] | NL | 04.12.2002 | |
SE | 04.03.2003 | ||
Former [2003/27] | SE | 04.03.2003 | Documents cited: | Search | [A]FR2077574 (GEN ELECTRIC) [A] 1-3,5,6,13 * example 6 *; | [A]US4348473 (OKUMURA KOJI, et al) [A] 2* claim 1 *; | [A]EP0204538 (TOSHIBA KK [JP]) [A] 1,2,4,7-13 * figures 6,7 *; | [Y]US4698238 (HAYASAKA NOBUO [JP], et al) [Y] 1,2,4-13,18,19 * example 1 *; | [Y]WO8907285 (MASSACHUSETTS INST TECHNOLOGY [US]) [Y] 1-6,8-13,15-18 * the whole document *; | [Y] - ANTHONY ET AL, "In situ cleaning of silicon substrate surfaces by remote plasma-excited hydrogen", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, NEW YORK US, vol. 7, no. 4, pages 621 - 626, XP000168951 [Y] 1-13,15-18 * abstract * * page 623, column L, paragraph 2 * DOI: http://dx.doi.org/10.1116/1.584805 | [Y] - TANEYA ET AL, "Photo-oxidation of GaAs for in situ patterned-mask formation prior to chlorine gas etching", APPLIED PHYSICS LETTERS, NEW YORK US, (19900101), vol. 56, no. 1, pages 98 - 100, XP000126795 [Y] 19 * figure 1 * DOI: http://dx.doi.org/10.1063/1.102616 | [A] - TAKAKUWA ET AL, "Low-temperature cleaning of HF passivated Si(111) surface with VUV light", JAPANESE JOURNAL OF APPLIED PHYSICS, TOKYO JP, vol. 28, no. 7, pages L1274 - L1277, XP000073560 [A] 1 * abstract * DOI: http://dx.doi.org/10.1143/JJAP.28.L1274 | [A] - "Antireflective Chrome photomasks", IBM TECHNICAL DISCLOSURE BULLETIN, NEW YORK US, vol. 13, no. 3, page 752 [A] 14 * the whole document * | by applicant | JPS62219525 | - NIKKEI MICRODEVICE, (198610), vol. 2 EXTRA | - BRANCH OF SOCIETY OF APPLIED ELECTRONIC PHYSICAL PROPERTIES, page 13 | - SEMI TECHNOL. SYMP., (1985), page F-3-1 | - SEKINE, OKANO, HORIIKE, THE FIFTH DRY PROCESS SYMPOSIUM LECTURE PRETEXT, (1983), page 97 | - J. VAC. SCI. TECHNOL., (1985), vol. B3, no. 5, page 1507 |