EP0722191 - Metal semiconductor metal photodetectors [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 30.11.2001 Database last updated on 19.10.2024 | Most recent event Tooltip | 30.11.2001 | No opposition filed within time limit | published on 16.01.2002 [2002/03] | Applicant(s) | For all designated states AT&T Corp. 32 Avenue of the Americas New York, NY 10013-2412 / US | [1996/29] | Inventor(s) | 01 /
Dutta, Niloy Kumar 13 Grandin Terrace Annandale, New Jersey 08801 / US | 02 /
Nichols, Doyle Thomas 307A Main Avenue Stirling, New Jersey 07980 / US | 03 /
Jacobson, Dale Conrad 107 Cat Swamp Road Hackettstown, New Jersey 07840 / US | [1996/29] | Representative(s) | Johnston, Kenneth Graham, et al Lucent Technologies EUR-IP UK Ltd Unit 18, Core 3 Workzone Innova Business Park Electric Avenue Enfield, EN3 7XB / GB | [N/P] |
Former [1996/29] | Johnston, Kenneth Graham, et al Lucent Technologies (UK) Ltd, 5 Mornington Road Woodford Green Essex, IG8 OTU / GB | Application number, filing date | 95309019.8 | 12.12.1995 | [1996/29] | Priority number, date | US19950371247 | 11.01.1995 Original published format: US 371247 | [1996/29] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0722191 | Date: | 17.07.1996 | Language: | EN | [1996/29] | Type: | A3 Search report | No.: | EP0722191 | Date: | 11.12.1996 | [1996/50] | Type: | B1 Patent specification | No.: | EP0722191 | Date: | 24.01.2001 | Language: | EN | [2001/04] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 24.10.1996 | Classification | IPC: | H01L31/108 | [1996/29] | CPC: |
H01L31/1085 (EP,US);
H01L31/108 (KR)
| Designated contracting states | DE, FR, GB [1996/29] | Title | German: | Metall-Semiconductor-Metall-Photodetektoren | [1996/29] | English: | Metal semiconductor metal photodetectors | [1996/29] | French: | Photodétecteurs métal-semi-conducteur-métal | [1996/29] | Examination procedure | 29.05.1997 | Examination requested [1997/31] | 09.04.1998 | Despatch of a communication from the examining division (Time limit: M06) | 14.10.1998 | Reply to a communication from the examining division | 25.10.1999 | Despatch of communication of intention to grant (Approval: No) | 27.04.2000 | Despatch of communication of intention to grant (Approval: later approval) | 18.05.2000 | Communication of intention to grant the patent | 21.07.2000 | Fee for grant paid | 21.07.2000 | Fee for publishing/printing paid | Opposition(s) | 25.10.2001 | No opposition filed within time limit [2002/03] | Fees paid | Renewal fee | 08.12.1997 | Renewal fee patent year 03 | 11.12.1998 | Renewal fee patent year 04 | 10.12.1999 | Renewal fee patent year 05 | 20.09.2000 | Renewal fee patent year 06 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA] - SHARMA A K ET AL, "ION IMPLANTATION ENHANCED METAL-SI-METAL PHOTODETECTORS", IEEE PHOTONICS TECHNOLOGY LETTERS, (19940501), vol. 6, no. 5, pages 635 - 638, XP000446981 [X] 1,5,6,10 * page 635, column L - page 637, column L * [A] 2-4,7-9 DOI: http://dx.doi.org/10.1109/68.285564 | [A] - MULLINS B W ET AL, "A SIMPLE HIGH-SPEED SI SCHOTTKY PHOTODIODE", IEEE PHOTONICS TECHNOLOGY LETTERS, (19910401), vol. 3, no. 4, pages 360 - 362, XP000227572 [A] 1,2,5-7,10 * page 360, column L - page 361, column L * DOI: http://dx.doi.org/10.1109/68.82112 | [A] - CHOU S Y ET AL, "32 GHZ METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON CRYSTALLINE SILICON", APPLIED PHYSICS LETTERS, (19921012), vol. 61, no. 15, pages 1760 - 1762, XP000316460 [A] 1,5 * page 320; figure 1 * DOI: http://dx.doi.org/10.1063/1.108418 | [PX] - JACOBSON D T D C AND DUTTA N K, "HIGH-FREQUENCY ION-IMPLANTED SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTORS", CLEO 995. CONFERENCE ON LASERS AND ELECTRO-OPTICS (IEEE CAT. NO. 95CH35800), BALTIMORE, MA, USA, (19950522), page 178, XP000605032 [PX] 1-10 * the whole document * |