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Extract from the Register of European Patents

EP About this file: EP0722191

EP0722191 - Metal semiconductor metal photodetectors [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  30.11.2001
Database last updated on 19.10.2024
Most recent event   Tooltip30.11.2001No opposition filed within time limitpublished on 16.01.2002  [2002/03]
Applicant(s)For all designated states
AT&T Corp.
32 Avenue of the Americas
New York, NY 10013-2412 / US
[1996/29]
Inventor(s)01 / Dutta, Niloy Kumar
13 Grandin Terrace
Annandale, New Jersey 08801 / US
02 / Nichols, Doyle Thomas
307A Main Avenue
Stirling, New Jersey 07980 / US
03 / Jacobson, Dale Conrad
107 Cat Swamp Road
Hackettstown, New Jersey 07840 / US
[1996/29]
Representative(s)Johnston, Kenneth Graham, et al
Lucent Technologies EUR-IP UK Ltd Unit 18, Core 3 Workzone Innova Business Park Electric Avenue
Enfield, EN3 7XB / GB
[N/P]
Former [1996/29]Johnston, Kenneth Graham, et al
Lucent Technologies (UK) Ltd, 5 Mornington Road
Woodford Green Essex, IG8 OTU / GB
Application number, filing date95309019.812.12.1995
[1996/29]
Priority number, dateUS1995037124711.01.1995         Original published format: US 371247
[1996/29]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0722191
Date:17.07.1996
Language:EN
[1996/29]
Type: A3 Search report 
No.:EP0722191
Date:11.12.1996
[1996/50]
Type: B1 Patent specification 
No.:EP0722191
Date:24.01.2001
Language:EN
[2001/04]
Search report(s)(Supplementary) European search report - dispatched on:EP24.10.1996
ClassificationIPC:H01L31/108
[1996/29]
CPC:
H01L31/1085 (EP,US); H01L31/108 (KR)
Designated contracting statesDE,   FR,   GB [1996/29]
TitleGerman:Metall-Semiconductor-Metall-Photodetektoren[1996/29]
English:Metal semiconductor metal photodetectors[1996/29]
French:Photodétecteurs métal-semi-conducteur-métal[1996/29]
Examination procedure29.05.1997Examination requested  [1997/31]
09.04.1998Despatch of a communication from the examining division (Time limit: M06)
14.10.1998Reply to a communication from the examining division
25.10.1999Despatch of communication of intention to grant (Approval: No)
27.04.2000Despatch of communication of intention to grant (Approval: later approval)
18.05.2000Communication of intention to grant the patent
21.07.2000Fee for grant paid
21.07.2000Fee for publishing/printing paid
Opposition(s)25.10.2001No opposition filed within time limit [2002/03]
Fees paidRenewal fee
08.12.1997Renewal fee patent year 03
11.12.1998Renewal fee patent year 04
10.12.1999Renewal fee patent year 05
20.09.2000Renewal fee patent year 06
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XA]  - SHARMA A K ET AL, "ION IMPLANTATION ENHANCED METAL-SI-METAL PHOTODETECTORS", IEEE PHOTONICS TECHNOLOGY LETTERS, (19940501), vol. 6, no. 5, pages 635 - 638, XP000446981 [X] 1,5,6,10 * page 635, column L - page 637, column L * [A] 2-4,7-9

DOI:   http://dx.doi.org/10.1109/68.285564
 [A]  - MULLINS B W ET AL, "A SIMPLE HIGH-SPEED SI SCHOTTKY PHOTODIODE", IEEE PHOTONICS TECHNOLOGY LETTERS, (19910401), vol. 3, no. 4, pages 360 - 362, XP000227572 [A] 1,2,5-7,10 * page 360, column L - page 361, column L *

DOI:   http://dx.doi.org/10.1109/68.82112
 [A]  - CHOU S Y ET AL, "32 GHZ METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON CRYSTALLINE SILICON", APPLIED PHYSICS LETTERS, (19921012), vol. 61, no. 15, pages 1760 - 1762, XP000316460 [A] 1,5 * page 320; figure 1 *

DOI:   http://dx.doi.org/10.1063/1.108418
 [PX]  - JACOBSON D T D C AND DUTTA N K, "HIGH-FREQUENCY ION-IMPLANTED SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTORS", CLEO 995. CONFERENCE ON LASERS AND ELECTRO-OPTICS (IEEE CAT. NO. 95CH35800), BALTIMORE, MA, USA, (19950522), page 178, XP000605032 [PX] 1-10 * the whole document *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.