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Extract from the Register of European Patents

EP About this file: EP0734593

EP0734593 - BUFFER STRUCTURE BETWEEN SILICON CARBIDE AND GALLIUM NITRIDE AND RESULTING SEMICONDUCTOR DEVICES [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  03.12.1999
Database last updated on 15.11.2024
Most recent event   Tooltip04.01.2008Lapse of the patent in a contracting state
New state(s): IT		published on 06.02.2008  [2008/06]
Applicant(s)For all designated states
CREE RESEARCH, INC.
2810 Meridian Parkway, Suite 176
Durham, North Carolina 27713 / US
[1996/40]
Inventor(s)01 / EDMOND, John, A.
1310 Boxwood Lane
Apex, NC 27502 / US
02 / DMITRIEV, Vladimir
5425 Lafayette Drive
Fuquay-Varina, NC 27526 / US
03 / IRVINE, Kenneth
104H Stephanie Drive
Cary, NC 27511 / US
[1996/40]
Representative(s)Warren, Anthony Robert, et al
Baron Warren Redfern Cambridge House 100 Cambridge Grove Hammersmith London
W6 0LE / GB
[N/P]
Former [1996/40]Warren, Anthony Robert, et al
BARON & WARREN, 18 South End, Kensington
London W8 5BU / GB
Application number, filing date95904227.601.11.1994
[1996/40]
WO1994US13940
Priority number, dateUS1993016622913.12.1993         Original published format: US 166229
[1996/40]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO9517019
Date:22.06.1995
Language:EN
[1995/26]
Type: A1 Application with search report 
No.:EP0734593
Date:02.10.1996
Language:EN
The application published by WIPO in one of the EPO official languages on 22.06.1995 takes the place of the publication of the European patent application.
[1996/40]
Type: B1 Patent specification 
No.:EP0734593
Date:03.02.1999
Language:EN
[1999/05]
Search report(s)International search report - published on:EP22.06.1995
ClassificationIPC:H01L33/00, H01L21/20
[1996/40]
CPC:
H01L33/007 (EP,US); H01L33/00 (KR)
Designated contracting statesAT,   BE,   CH,   DE,   DK,   ES,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE [1996/40]
TitleGerman:PUFFER-STRUKTUR ZWISCHEN SILIZIUMKARBID UND GALLIUMNITRID UND SICH DARAUS ERGEBENDE HALBLEITERANORDNUNGEN[1996/40]
English:BUFFER STRUCTURE BETWEEN SILICON CARBIDE AND GALLIUM NITRIDE AND RESULTING SEMICONDUCTOR DEVICES[1996/40]
French:STRUCTURE TAMPON ENTRE DU CARBURE DU SILICIUM ET DU NITRURE DE GALLIUM ET DISPOSITIFS SEMI-CONDUCTEURS AINSI OBTENUS[1996/40]
Entry into regional phase27.06.1996National basic fee paid 
27.06.1996Designation fee(s) paid 
27.06.1996Examination fee paid 
Examination procedure29.05.1995Request for preliminary examination filed
International Preliminary Examining Authority: EP
27.06.1996Examination requested  [1996/40]
11.12.1997Despatch of communication of intention to grant (Approval: No)
04.05.1998Despatch of communication of intention to grant (Approval: later approval)
15.05.1998Communication of intention to grant the patent
25.06.1998Fee for grant paid
25.06.1998Fee for publishing/printing paid
Opposition(s)04.11.1999No opposition filed within time limit [2000/03]
Fees paidRenewal fee
22.11.1996Renewal fee patent year 03
21.11.1997Renewal fee patent year 04
10.11.1998Renewal fee patent year 05
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT03.02.1999
BE03.02.1999
ES03.02.1999
GR03.02.1999
IT03.02.1999
DK03.05.1999
PT03.05.1999
IE01.11.1999
LU01.11.1999
[2008/06]
Former [2004/39]AT03.02.1999
BE03.02.1999
ES03.02.1999
GR03.02.1999
DK03.05.1999
PT03.05.1999
IE01.11.1999
LU01.11.1999
Former [2003/45]AT03.02.1999
BE03.02.1999
ES03.02.1999
GR03.02.1999
DK03.05.1999
PT03.05.1999
IE01.11.1999
Former [2002/26]AT03.02.1999
BE03.02.1999
ES03.02.1999
GR03.02.1999
PT03.05.1999
IE01.11.1999
Former [2001/23]AT03.02.1999
BE03.02.1999
GR03.02.1999
PT03.05.1999
IE01.11.1999
Former [2001/12]AT03.02.1999
BE03.02.1999
PT03.05.1999
IE01.11.1999
Former [2000/23]AT03.02.1999
BE03.02.1999
PT03.05.1999
Former [2000/21]AT03.02.1999
Cited inInternational search[A]JPH05206513  ;
 [A]EP0497350  (NICHIA KAGAKU KOGYO KK [JP]) [A] 1,3,8-11 * claim - *;
 [A]US5247533  (OKAZAKI NOBUO [JP], et al) [A] 1,3,8-11* column 6, line 13 - line 40; example 3 *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19931126), vol. 17, no. 640, Database accession no. (E - 1465), & JP05206513 A 19930813 (SHARP CORP) [A] 1-3,8-11 * abstract *
ExaminationEP0496030
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.