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EP0806083
European procedure
Extract from the Register of European Patents
EP About this file: EP0806083
| EP0806083 - MOS CIRCUIT FOR SWITCHING HIGH VOLTAGES ON A SEMICONDUCTOR CHIP [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 13.08.1999 Database last updated on 28.03.2026 | Most recent event Tooltip | 13.08.1999 | No opposition filed within time limit | published on 29.09.1999 [1999/39] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
| Former [1997/46] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 80333 München / DE | Inventor(s) | 01 /
HANNEBERG, Armin Wieselweg 2 D-85540 Haar / DE | 02 /
TEMPEL, Georg Flaschenträgerstrasse 17 D-81927 München / DE | [1997/46] | Application number, filing date | 95942654.5 | 29.12.1995 | [1997/46] | WO1995DE01875 | Priority number, date | DE1995102116 | 24.01.1995 Original published format: DE 19502116 | [1997/46] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | WO9623356 | Date: | 01.08.1996 | Language: | DE | [1996/35] | Type: | A1 Application with search report | No.: | EP0806083 | Date: | 12.11.1997 | Language: | DE | The application published by WIPO in one of the EPO official languages on 01.08.1996 takes the place of the publication of the European patent application. | [1997/46] | Type: | B1 Patent specification | No.: | EP0806083 | Date: | 07.10.1998 | Language: | DE | [1998/41] | Search report(s) | International search report - published on: | EP | 01.08.1996 | Classification | IPC: | H03K17/10, H03K17/693, G11C16/06 | [1997/46] | CPC: |
G11C5/143 (EP,US);
H03K17/10 (KR);
G11C16/12 (EP,US);
G11C16/14 (EP,US);
G11C5/14 (EP,US);
H03K17/102 (EP,US);
| Designated contracting states | AT, CH, DE, ES, FR, GB, IT, LI [1997/46] | Title | German: | MOS-SCHALTUNGSANORDNUNG ZUM SCHALTEN HOHER SPANNUNGEN AUF EINEM HALBLEITERCHIP | [1997/46] | English: | MOS CIRCUIT FOR SWITCHING HIGH VOLTAGES ON A SEMICONDUCTOR CHIP | [1997/46] | French: | CIRCUIT MOS PERMETANT LA COMMUTATION DE TENSIONS ELEVEES SUR UNE PUCE DE SEMICONDUCTEUR | [1997/46] | Entry into regional phase | 21.07.1997 | National basic fee paid | 21.07.1997 | Designation fee(s) paid | 21.07.1997 | Examination fee paid | Examination procedure | 18.06.1996 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 21.07.1997 | Examination requested [1997/46] | 13.03.1998 | Despatch of communication of intention to grant (Approval: Yes) | 09.04.1998 | Communication of intention to grant the patent | 07.07.1998 | Fee for grant paid | 07.07.1998 | Fee for publishing/printing paid | Opposition(s) | 08.07.1999 | No opposition filed within time limit [1999/39] | Fees paid | Renewal fee | 18.12.1997 | Renewal fee patent year 03 |
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