Extract from the Register of European Patents

EP About this file: EP0741410

EP0741410 - Semiconductor device and method for manufacturing the same [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  08.05.2009
Database last updated on 11.04.2026
Most recent event   Tooltip08.05.2009No opposition filed within time limitpublished on 10.06.2009  [2009/24]
Applicant(s)For all designated states
Oki Electric Industry Co., Ltd.
7-12, Toranomon 1-chome Minato-ku
Tokyo / JP
[2008/27]
Former [1996/45]For all designated states
Oki Electric Industry Co., Ltd.
7-12, Toranomon 1-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Onoda, Hiroshi, c/o Oki Electric Ind. Co., Ltd
7-12 Toranomon 1-chome
Minato-ku, Tokyo / JP
[1996/45]
Representative(s)Read, Matthew Charles, et al
Venner Shipley LLP
200 Aldersgate
London EC1A 4HD / GB
[N/P]
Former [1996/45]Read, Matthew Charles, et al
Venner Shipley & Co. 20 Little Britain
London EC1A 7DH / GB
Application number, filing date96106938.202.05.1996
[1996/45]
Priority number, dateJP1995010717701.05.1995         Original published format: JP 10717795
[1996/45]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0741410
Date:06.11.1996
Language:EN
[1996/45]
Type: A3 Search report 
No.:EP0741410
Date:04.06.1997
[1997/23]
Type: B1 Patent specification 
No.:EP0741410
Date:02.07.2008
Language:EN
[2008/27]
Search report(s)(Supplementary) European search report - dispatched on:EP16.04.1997
ClassificationIPC:H01L23/522
[1996/45]
CPC:
H10W20/42 (EP,KR,US)
Designated contracting statesDE,   FR,   GB [1996/45]
TitleGerman:Halbleiteranordnung und Verfahren zu ihrer Herstellung[1996/45]
English:Semiconductor device and method for manufacturing the same[1996/45]
French:Dispositif semi-conducteur et procédé de fabrication[1996/45]
Examination procedure31.07.1997Examination requested  [1997/40]
03.09.1999Despatch of a communication from the examining division (Time limit: M04)
25.11.1999Reply to a communication from the examining division
20.03.2001Despatch of a communication from the examining division (Time limit: M04)
02.07.2001Reply to a communication from the examining division
08.02.2002Despatch of a communication from the examining division (Time limit: M04)
08.03.2002Reply to a communication from the examining division
06.11.2007Communication of intention to grant the patent
17.03.2008Fee for grant paid
17.03.2008Fee for publishing/printing paid
Opposition(s)03.04.2009No opposition filed within time limit [2009/24]
Fees paidRenewal fee
28.05.1998Renewal fee patent year 03
25.05.1999Renewal fee patent year 04
23.05.2000Renewal fee patent year 05
25.05.2001Renewal fee patent year 06
28.05.2002Renewal fee patent year 07
30.05.2003Renewal fee patent year 08
21.05.2004Renewal fee patent year 09
17.05.2005Renewal fee patent year 10
18.05.2006Renewal fee patent year 11
17.05.2007Renewal fee patent year 12
19.05.2008Renewal fee patent year 13
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Documents cited:Search[XY] EP0124181  (PHILIPS NV et al.) [X] 1,4-9,11,13,17 * page 4, line 36 - page 12, line 12; figures 1-5 *[Y] 10,12,14
 [PXA] EP0670597  (TOSHIBA KK et al.) [PX] 1,4-9,11,13,15,17 * column 5, line 36 - column 7, line 48; figures 3-9 * * column 1, line 16 - column 2, line 18; figures 1,2 *[A] 16,10,12,14
 [XA] EP0480580  (CANON KK et al.) [X] 1,3,4,7,9,11 * page 16, line 32 - page 17, line 19; figures 1A,1B,10A,10B *[A] 5,6,8,10,12-14,17
 [XA] US5233223  (MURAYAMA MOTOAKI et al.) [X] 5,6,13 * column 4, line 10 - column 5, line 40; figures 2-4 *[A] 1-4,7-12,14,17
 [XA] DE4328474  (GOLD STAR ELECTRONICS et al.) [X] 5,6 * column 4, line 19 - column 5, line 38; figures 6,7 *[A] 1-4,7-14,17
 [X] JPS5975645  
 [X] EP0289274  (HEWLETT PACKARD CO et al.) [X] 15,16 * column 1, line 27 - line 32 * * column 2, line 41 - column 3, line 1 * * column 3, line 53 - column 4, line 24; figures 2,3 *
 [XA] EP0513715  (SIEMENS AG et al.) [X] 15 * column 1, line 26 - column 2, line 4; figure 1 *[A] 16
 [YA]   ROBERTS B ET AL: "INTERCONNECT METALLIZATION FOR FUTURE DEVICE GENERATIONS", SOLID STATE TECHNOLOGY, vol. 38, no. 2, 1 February 1995 (1995-02-01), pages 69/70, 72, 74, 76, 78, XP000490071 [Y] 10,12,14 * page 69, column L, paragraph 1 - column R, paragraph 2; figure 1 *[A] 1,5-8,11,13,17

DOI:   http://dx.doi.org/10.1016/0038-1101(94)E0050-O
 [XA]   R.M. GEFFKEN: "Multi-level metallurgy for master image structured logic", PROCEEDINGS OF THE IEEE INTERNATIONAL ELECTRON DEVICES MEETING 83, December 1983 (1983-12-01), NEW YORK, US, pages 542 - 545, XP000195641 [X] 1,3-9,17 * page 542, column R, paragraph 3 - page 543, column L, paragraph 2; figure 2 * * page 542, column L, paragraph 3 - column R, paragraph 2; figures 1A,1B * [A] 15,16,11-14
 [XA]   DIJK VAN J M F ET AL: "A TWO-LEVEL METALLIZATION SYSTEM WITH OVERSIZED VIAS AND A TI:W ETCH BARRIER", IEEE VLSI MULTILEVEL INTERCONNECTION CONFERENCE, SANTA CLARA, JUNE 25 - 26, 1985, no. 1985, 25 June 1985 (1985-06-25), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 123 - 130, XP000010249 [X] 1,4-9,17 * the whole document * [A] 11-14
 [X]   PATENT ABSTRACTS OF JAPAN vol. 008, no. 185 (E - 262) 24 August 1984 (1984-08-24) [X] 15,16 * abstract *
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