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EP0762511

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EP About this file: EP0762511

EP0762511 - Bipolar transistor and method of manufacturing the same [Right-click to bookmark this link]
Status	No opposition filed within time limit Status updated on 14.03.2003 Database last updated on 09.09.2024
Most recent event Tooltip	14.03.2003	No opposition filed within time limit	published on 02.05.2003 [2003/18]
Applicant(s)	For all designated states NEC Corporation 7-1, Shiba 5-chome Minato-ku Tokyo 108-8001 / JP
	[N/P]
Former [2002/19]	For all designated states NEC CORPORATION 7-1, Shiba 5-chome, Minato-ku Tokyo / JP
Former [1997/11]	For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP
Inventor(s)	01 / Yamazaki, Toru, c/o NEC Corp. 7-1, Shiba 5-chome Minato-ku, Tokyo / JP
	[1997/11]
Representative(s)	Glawe, Delfs, Moll Partnerschaft mbB von Patent- und Rechtsanwälten Postfach 26 01 62 80058 München / DE
	[N/P]
Former [1997/11]	Glawe, Delfs, Moll & Partner Patentanwälte Postfach 26 01 62 80058 München / DE
Application number, filing date	96113709.8	27.08.1996
	[1997/11]
Priority number, date	JP19950246927	31.08.1995 Original published format: JP 24692795
	[1997/11]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	EP0762511
	Date:	12.03.1997
	Language:	EN
	[1997/11]
	Type:	B1 Patent specification
	No.:	EP0762511
	Date:	08.05.2002
	Language:	EN
	[2002/19]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	07.01.1997
Classification	IPC:	H01L29/08, H01L29/732	[1997/11]
	CPC:	H01L29/66272 (EP,US); H01L27/082 (KR); H01L29/0826 (EP,US)
Designated contracting states	DE, GB [1997/11]
Title	German:	Bipolartransistor und Verfahren zur Herstellung	[1997/11]
	English:	Bipolar transistor and method of manufacturing the same	[1997/11]
	French:	Transistor bipolaire et méthode de fabrication	[1997/11]
Examination procedure	10.01.1997	Examination requested [1997/11]
	29.06.1999	Despatch of a communication from the examining division (Time limit: M06)
	10.01.2000	Reply to a communication from the examining division
	23.10.2000	Despatch of a communication from the examining division (Time limit: M06)
	30.04.2001	Reply to a communication from the examining division
	16.07.2001	Despatch of communication of intention to grant (Approval: Yes)
	08.11.2001	Communication of intention to grant the patent
	13.02.2002	Fee for grant paid
	13.02.2002	Fee for publishing/printing paid
Opposition(s)	11.02.2003	No opposition filed within time limit [2003/18]
Fees paid	Renewal fee
	20.08.1998	Renewal fee patent year 03
	19.08.1999	Renewal fee patent year 04
	21.08.2000	Renewal fee patent year 05
	20.08.2001	Renewal fee patent year 06
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[A]JPH01253272 ;
		[DA]JPH0451526 ;
		[DA]JPH05259175 ;
		[A]US4165516 (SMULDERS WALTER H M M) [A] 1,3 * column W *;
		[A]EP0263504 (TOSHIBA KK [JP]) [A] 3,7* column W *;
		[A]EP0418421 (SIEMENS AG [DE]) [A] 1,6 * column W *;
		[A]EP0425242 (SONY CORP [JP]) [A] 1,4-6 * column W *;
		[A]US5432104 (SATO FUMIHIKO [JP]) [A] 1,3-6 * column W *;
		[X] - W.P. DUMKE, "Transistor collector doping for reduced capacitance", IBM TECHNICAL DISCLOSURE BULLETIN, NEW YORK US, (198307), vol. 26, no. 2, page 492, XP002020060 [X] 1 * the whole document *
		[A] - PATENT ABSTRACTS OF JAPAN, (19890109), vol. 14, no. 5, Database accession no. (E - 869), & JP01253272 A 19891009 (NEC CORP) [A] 1,4-6 * abstract *
		[DA] - PATENT ABSTRACTS OF JAPAN, (19920605), vol. 16, no. 246, Database accession no. (E - 1212), & JP0451526 A 19920220 (FUJITSU LTD) [DA] 1,6 * abstract *
		[DA] - PATENT ABSTRACTS OF JAPAN, (19940113), vol. 18, no. 20, Database accession no. (E - 1489), & JP05259175 A 19931008 (FUJITSU LTD) [DA] 1,6 * abstract *

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