HIGH-VOLTAGE BIPOLAR TRANSISTOR UTILIZING FIELD-TERMINATED BOND-PAD ELECTRODES | ||||
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Application No.EP96120399 |
Publication No.EP0782198 |
ApplicantRAYTHEON COMPANY |
IPC |
Status | Application No. |
Publication No. |
Proprietor | Invalidation date |
Not in force since |
Renewal fees last paid |
Record last updated |
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Designated contracting states | DE ES GB IT |