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Extract from the Register of European Patents

EP About this file: EP0782198

EP0782198 - High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  02.03.2002
Database last updated on 29.10.2024
Most recent event   Tooltip02.03.2002No opposition filed within time limitpublished on 17.04.2002  [2002/16]
Applicant(s)For all designated states
RAYTHEON COMPANY
141 Spring Street
Lexington
Massachusetts 02173 / US
[N/P]
Former [2001/17]For all designated states
RAYTHEON COMPANY
141 Spring Street
Lexington, Massachusetts 02173 / US
Former [1998/51]For all designated states
RAYTHEON COMPANY
141 Spring Street
Lexington Massachusetts 02173 / US
Former [1997/27]For all designated states
HE HOLDINGS, INC. dba HUGHES ELECTRONICS
7200 Hughes Terrace
Los Angeles, CA 90045-0066 / US
Inventor(s)01 / Hooper, William W.
1741 Royal Saint George Drive
Westlake Village, California 91362 / US
02 / Case, Michael G.
211 Sandberg Street
Thousand Oaks, California 91360 / US
03 / Nguyen, Chanh N.
2080 West Hillcrest No. 203
Newbury Park, California 92320 / US
[1997/27]
Representative(s)Witte, Alexander, et al
Witte, Weller, Gahlert, Otten & Steil, Patentanwälte, Rotebühlstrasse 121
70178 Stuttgart / DE
[N/P]
Former [1997/27]Witte, Alexander, Dr.-Ing., et al
Witte, Weller, Gahlert, Otten & Steil, Patentanwälte, Rotebühlstrasse 121
70178 Stuttgart / DE
Application number, filing date96120399.918.12.1996
[1997/27]
Priority number, dateUS1995057879626.12.1995         Original published format: US 578796
[1997/27]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0782198
Date:02.07.1997
Language:EN
[1997/27]
Type: A3 Search report 
No.:EP0782198
Date:17.12.1997
[1997/51]
Type: B1 Patent specification 
No.:EP0782198
Date:25.04.2001
Language:EN
[2001/17]
Search report(s)(Supplementary) European search report - dispatched on:EP29.10.1997
ClassificationIPC:H01L29/06, H01L29/423, H01L29/417, H01L23/485
[1997/49]
CPC:
H01L29/402 (EP,US); H01L24/02 (US); H01L29/41708 (EP,US);
H01L2224/04042 (EP); H01L24/05 (EP); H01L2924/01004 (EP,US);
H01L2924/01005 (EP,US); H01L2924/01006 (EP,US); H01L2924/01013 (EP,US);
H01L2924/01014 (EP,US); H01L2924/01015 (EP,US); H01L2924/01019 (EP,US);
H01L2924/01023 (EP,US); H01L2924/01032 (EP,US); H01L2924/01033 (EP,US);
H01L2924/01049 (EP,US); H01L2924/01074 (EP,US); H01L2924/01078 (EP,US);
H01L2924/05042 (EP,US); H01L2924/10329 (EP,US); H01L2924/10336 (EP,US);
H01L2924/1305 (EP,US); H01L2924/14 (EP,US); H01L2924/30105 (EP,US);
H01L2924/3025 (EP,US) (-)
C-Set:
H01L2924/1305, H01L2924/00 (EP,US);
H01L2924/14, H01L2924/00 (US,EP)
Former IPC [1997/27]H01L29/06, H01L29/423
Designated contracting statesDE,   ES,   GB,   IT [1997/27]
TitleGerman:Bipolartransistor für hohe Spannungen unter Benutzung von feldabgeschlossenen Anschlusselektroden[1997/27]
English:High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes[1997/27]
French:Transistor bipolaire à haute tension utilisant des électrodes de plage de contact isolées du champ[1997/27]
Examination procedure15.06.1998Examination requested  [1998/33]
30.12.1998Despatch of a communication from the examining division (Time limit: M04)
03.04.1999Reply to a communication from the examining division
03.05.1999Despatch of a communication from the examining division (Time limit: M04)
26.07.1999Reply to a communication from the examining division
20.09.2000Despatch of communication of intention to grant (Approval: Yes)
24.10.2000Communication of intention to grant the patent
30.01.2001Fee for grant paid
30.01.2001Fee for publishing/printing paid
Opposition(s)26.01.2002No opposition filed within time limit [2002/16]
Fees paidRenewal fee
18.11.1998Renewal fee patent year 03
17.11.1999Renewal fee patent year 04
17.11.2000Renewal fee patent year 05
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Documents cited:Search[XA]FR1587469  (GENERAL ELECTRIC) [X] 1-7,9,10 * figure 1 * [A] 8;
 [X]EP0450320  (TOSHIBA KK [JP]) [X] 1,5,7 * figure 2 *;
 [X]US5109266  (KIDA TAKESHI [JP], et al) [X] 1-4,7,9,10 * figures 1,12 *;
 [A]US5401682  (YANG SHENG-HSING [TW]) [A] 2,9* figures 1,2G *
ExaminationUS3573571
by applicantUS2569347
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.