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EP0782198
European procedure
Extract from the Register of European Patents
EP About this file: EP0782198
| EP0782198 - High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 02.03.2002 Database last updated on 29.10.2024 | Most recent event Tooltip | 02.03.2002 | No opposition filed within time limit | published on 17.04.2002 [2002/16] | Applicant(s) | For all designated states RAYTHEON COMPANY 141 Spring Street Lexington Massachusetts 02173 / US | [N/P] |
| Former [2001/17] | For all designated states RAYTHEON COMPANY 141 Spring Street Lexington, Massachusetts 02173 / US | ||
| Former [1998/51] | For all designated states RAYTHEON COMPANY 141 Spring Street Lexington Massachusetts 02173 / US | ||
| Former [1997/27] | For all designated states HE HOLDINGS, INC. dba HUGHES ELECTRONICS 7200 Hughes Terrace Los Angeles, CA 90045-0066 / US | Inventor(s) | 01 /
Hooper, William W. 1741 Royal Saint George Drive Westlake Village, California 91362 / US | 02 /
Case, Michael G. 211 Sandberg Street Thousand Oaks, California 91360 / US | 03 /
Nguyen, Chanh N. 2080 West Hillcrest No. 203 Newbury Park, California 92320 / US | [1997/27] | Representative(s) | Witte, Alexander, et al Witte, Weller, Gahlert, Otten & Steil, Patentanwälte, Rotebühlstrasse 121 70178 Stuttgart / DE | [N/P] |
| Former [1997/27] | Witte, Alexander, Dr.-Ing., et al Witte, Weller, Gahlert, Otten & Steil, Patentanwälte, Rotebühlstrasse 121 70178 Stuttgart / DE | Application number, filing date | 96120399.9 | 18.12.1996 | [1997/27] | Priority number, date | US19950578796 | 26.12.1995 Original published format: US 578796 | [1997/27] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0782198 | Date: | 02.07.1997 | Language: | EN | [1997/27] | Type: | A3 Search report | No.: | EP0782198 | Date: | 17.12.1997 | [1997/51] | Type: | B1 Patent specification | No.: | EP0782198 | Date: | 25.04.2001 | Language: | EN | [2001/17] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 29.10.1997 | Classification | IPC: | H01L29/06, H01L29/423, H01L29/417, H01L23/485 | [1997/49] | CPC: |
H01L29/402 (EP,US);
H01L24/02 (US);
H01L29/41708 (EP,US);
H01L2224/04042 (EP);
H01L24/05 (EP);
H01L2924/01004 (EP,US);
H01L2924/01005 (EP,US);
H01L2924/01006 (EP,US);
H01L2924/01013 (EP,US);
H01L2924/01014 (EP,US);
H01L2924/01015 (EP,US);
H01L2924/01019 (EP,US);
H01L2924/01023 (EP,US);
H01L2924/01032 (EP,US);
H01L2924/01033 (EP,US);
H01L2924/01049 (EP,US);
H01L2924/01074 (EP,US);
H01L2924/01078 (EP,US);
H01L2924/05042 (EP,US);
H01L2924/10329 (EP,US);
H01L2924/10336 (EP,US);
H01L2924/1305 (EP,US);
H01L2924/14 (EP,US);
H01L2924/30105 (EP,US);
H01L2924/3025 (EP,US)
(-)
| C-Set: |
H01L2924/1305, H01L2924/00 (EP,US);
H01L2924/14, H01L2924/00 (US,EP) |
| Former IPC [1997/27] | H01L29/06, H01L29/423 | Designated contracting states | DE, ES, GB, IT [1997/27] | Title | German: | Bipolartransistor für hohe Spannungen unter Benutzung von feldabgeschlossenen Anschlusselektroden | [1997/27] | English: | High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes | [1997/27] | French: | Transistor bipolaire à haute tension utilisant des électrodes de plage de contact isolées du champ | [1997/27] | Examination procedure | 15.06.1998 | Examination requested [1998/33] | 30.12.1998 | Despatch of a communication from the examining division (Time limit: M04) | 03.04.1999 | Reply to a communication from the examining division | 03.05.1999 | Despatch of a communication from the examining division (Time limit: M04) | 26.07.1999 | Reply to a communication from the examining division | 20.09.2000 | Despatch of communication of intention to grant (Approval: Yes) | 24.10.2000 | Communication of intention to grant the patent | 30.01.2001 | Fee for grant paid | 30.01.2001 | Fee for publishing/printing paid | Opposition(s) | 26.01.2002 | No opposition filed within time limit [2002/16] | Fees paid | Renewal fee | 18.11.1998 | Renewal fee patent year 03 | 17.11.1999 | Renewal fee patent year 04 | 17.11.2000 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]FR1587469 (GENERAL ELECTRIC) [X] 1-7,9,10 * figure 1 * [A] 8; | [X]EP0450320 (TOSHIBA KK [JP]) [X] 1,5,7 * figure 2 *; | [X]US5109266 (KIDA TAKESHI [JP], et al) [X] 1-4,7,9,10 * figures 1,12 *; | [A]US5401682 (YANG SHENG-HSING [TW]) [A] 2,9* figures 1,2G * | Examination | US3573571 | by applicant | US2569347 |