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EP0743379
European procedure
Extract from the Register of European Patents
EP About this file: EP0743379
| EP0743379 - Apparatus for vapor-phase epitaxial growth [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 12.05.2000 Database last updated on 02.11.2024 | Most recent event Tooltip | 21.06.2002 | Lapse of the patent in a contracting state | published on 07.08.2002 [2002/32] | Applicant(s) | For all designated states Shin-Etsu Handotai Co., Ltd. 4-2 Marunouchi 1-chome, Chiyoda-ku Tokyo 100-0005 / JP | [N/P] |
| Former [1999/27] | For all designated states Shin-Etsu Handotai Co., Ltd 4-2 Marunouchi 1-chome, Chiyoda-ku Tokyo 100-0005 / JP | ||
| Former [1996/47] | For all designated states Shin-Etsu Handotai Co., Ltd 4-2 Marunouchi 1-chome Chiyoda-ku Tokyo / JP | Inventor(s) | 01 /
Habuka, Hitoshi Asakura-cho 1-35-4 Maebashi-shi, Gunma-ken / JP | [1996/47] | Representative(s) | Cooper, John, et al Murgitroyd & Company Scotland House 165-169 Scotland Street Glasgow G5 8PL / GB | [N/P] |
| Former [1996/47] | Cooper, John, et al Murgitroyd & Company, Chartered Patent Agents, 373 Scotland Street Glasgow G5 8QA / GB | Application number, filing date | 96302927.7 | 26.04.1996 | [1996/47] | Priority number, date | JP19950127122 | 27.04.1995 Original published format: JP 12712295 | [1996/47] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0743379 | Date: | 20.11.1996 | Language: | EN | [1996/47] | Type: | B1 Patent specification | No.: | EP0743379 | Date: | 07.07.1999 | Language: | EN | [1999/27] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 09.08.1996 | Classification | IPC: | C30B25/14 | [1996/47] | CPC: |
C30B25/14 (EP,US);
Y10T117/1016 (EP,US)
| Designated contracting states | DE, FR, GB [1996/47] | Title | German: | Vorrichtung für epitaxiales Aufwachsen aus der Gasphase | [1996/47] | English: | Apparatus for vapor-phase epitaxial growth | [1996/47] | French: | Dispositif pour la croissance épitaxiale en phase vapeur | [1996/47] | Examination procedure | 08.04.1997 | Examination requested [1997/23] | 14.05.1997 | Despatch of a communication from the examining division (Time limit: M06) | 04.11.1997 | Reply to a communication from the examining division | 06.07.1998 | Despatch of communication of intention to grant (Approval: Yes) | 05.10.1998 | Communication of intention to grant the patent | 07.01.1999 | Fee for grant paid | 07.01.1999 | Fee for publishing/printing paid | Opposition(s) | 08.04.2000 | No opposition filed within time limit [2000/26] | Fees paid | Renewal fee | 27.04.1998 | Renewal fee patent year 03 | 27.04.1999 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FR | 07.07.1999 | [2002/32] | Documents cited: | Search | [X]US3293074 (JULIUS NICKL) [X] 1 * column 2, line 69 - column 5, line 60; figures 1-5 *; | [X]US4033286 (CHERN SHY-SHIUN, et al) [X] 1 * column 3, line 15 - column 5, line 26; figure 1 *; | [X]FR1518843 (RADIOTECHNIQUE COPRIM RTC) [X] 1-4 * page 3, column R, line 35 - page 4, column L, line 29; figures 1,2 *; | [X]EP0366173 (PHILIPS ELECTRONIQUE LAB [FR], et al) [X] 1 * column 2, line 38 - column 4, line 48; figure 1 *; | [X] - FRIJLINK P M ET AL, "LAYER UNIFORMITY IN A MULTIWAFER MOVPE REACTOR FOR III-V COMPOUNDS", JOURNAL OF CRYSTAL GROWTH, (19910101), vol. 107, no. 1 / 04, pages 166 - 174, XP000246591 [X] 1 * figure 1 * DOI: http://dx.doi.org/10.1016/0022-0248(91)90451-A |