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EP0782141
European procedure
Extract from the Register of European Patents
EP About this file: EP0782141
| EP0782141 - Voltage pumping circuit for semiconductor memory device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.01.2004 Database last updated on 02.11.2024 | Most recent event Tooltip | 24.01.2004 | No opposition filed within time limit | published on 10.03.2004 [2004/11] | Applicant(s) | For all designated states Samsung Electronics Co., Ltd. 416 Maetan-dong Paldal-gu Suwon City, Kyungki-do / KR | [N/P] |
| Former [1997/27] | For all designated states Samsung Electronics Co., Ltd. 416 Maetan-dong, Paldal-gu Suwon City, Kyungki-do / KR | Inventor(s) | 01 /
Bae, Yong-Cheol Sanga Apt. No.4-1105 Ohgeum-dong, Songpa-gu, Seoul / KR | 02 /
Yoon, Sei-Seung 40-118. Hangangro 3-ga Yongsan-gu. Seoul / KR | 03 /
Seo, Dong-Il 35, Woncheon-dong Paldal-gu, Suwon-city, Kyungki-do / KR | [1997/27] | Representative(s) | Tunstall, Christopher Stephen Harrison Goddard Foote Fountain Precinct Balm Green Sheffield S1 2JA / GB | [N/P] |
| Former [1998/03] | Tunstall, Christopher Stephen Dibb Lupton Alsop, Fountain Precinct Balm Green, Sheffield S1 1RZ / GB | ||
| Former [1997/27] | Tunstall, Christopher Stephen Dibb Lupton Alsop, 117 The Headrow Leeds, West Yorkshire LS1 5JX / GB | Application number, filing date | 96309400.8 | 23.12.1996 | [1997/27] | Priority number, date | KR19590041495 | 27.12.1995 Original published format: KR 5941495 | [1997/27] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0782141 | Date: | 02.07.1997 | Language: | EN | [1997/27] | Type: | A3 Search report | No.: | EP0782141 | Date: | 29.12.1997 | [1997/52] | Type: | B1 Patent specification | No.: | EP0782141 | Date: | 19.03.2003 | Language: | EN | [2003/12] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 11.11.1997 | Classification | IPC: | G11C5/14, G11C11/407 | [1997/51] | CPC: |
G11C5/145 (EP,US);
G11C5/14 (KR)
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| Former IPC [1997/27] | G11C5/14 | Designated contracting states | DE, FR, GB, IT [1997/27] | Title | German: | Spannungspumpenschaltung für Halbleiterspeicheranordnung | [1997/27] | English: | Voltage pumping circuit for semiconductor memory device | [1997/27] | French: | Circuit de pompage de tension pour dispositif de mémoire à semi-conducteurs | [1997/27] | Examination procedure | 07.01.1997 | Examination requested [1997/27] | 14.07.2000 | Despatch of a communication from the examining division (Time limit: M04) | 22.11.2000 | Reply to a communication from the examining division | 19.12.2000 | Despatch of a communication from the examining division (Time limit: M06) | 26.06.2001 | Reply to a communication from the examining division | 03.09.2001 | Despatch of a communication from the examining division (Time limit: M04) | 20.12.2001 | Reply to a communication from the examining division | 27.05.2002 | Despatch of communication of intention to grant (Approval: Yes) | 30.09.2002 | Communication of intention to grant the patent | 25.11.2002 | Fee for grant paid | 25.11.2002 | Fee for publishing/printing paid | Opposition(s) | 22.12.2003 | No opposition filed within time limit [2004/11] | Fees paid | Renewal fee | 16.11.1998 | Renewal fee patent year 03 | 26.10.1999 | Renewal fee patent year 04 | 20.11.2000 | Renewal fee patent year 05 | 04.12.2001 | Renewal fee patent year 06 | 28.10.2002 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [YA]US4769792 (NOGAMI KAZUTAKA [JP], et al); | [XY]US5267214 (FUJISHIMA KAZUYASU [JP], et al); | [PA]GB2296986 (SAMSUNG ELECTRONICS CO LTD [KR]); | [EA]GB2306718 (HYUNDAI ELECTRONICS IND [KR]) |