EP0781876 - Method and apparatus for production of single crystal [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 05.01.2001 Database last updated on 11.01.2025 | Most recent event Tooltip | 17.02.2006 | Change - lapse in a contracting state Updated state(s): FR | published on 05.04.2006 [2006/14] | Applicant(s) | For all designated states SHIN-ETSU HANDOTAI COMPANY LIMITED 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo / JP | [N/P] |
Former [1997/27] | For all designated states SHIN-ETSU HANDOTAI COMPANY LIMITED 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo / JP | Inventor(s) | 01 /
Hoshi, Ryouji, 304, 89-2, Ohaza Odakura, Aza Haranaka, Nishigo-mura Nishishirakawa-gun, Fukushima-ken / JP | 02 /
Sonokawa, Masashi, 202, 89-2, Ohaza Odakura, Aza Haranaka, Nishigo-mura Nishishirakawa-gun, Fukushima-ken / JP | 03 /
Fusegawa, Izumi, A-305, 355-3, Ohaza Odakura, Aza Haranaka, Nishigo-mura Nishishirakawa-gun, Fukushima-ken / JP | 04 /
Ohta, Tomohiko 11-4, Aza, Misaka 1-chome Shirakawa-shi, Fukushima-ken / JP | [1997/28] |
Former [1997/27] | 01 /
Hoshi, Ryouji, 304, 89-2, Ohaza Odakura, Aza Haranaka, Nishigo-mura Nishishirakawa-gun, Fukushima-ken / JP | ||
02 /
Sonokawa, Masashi, 202, 89-2, Ohaza Odakura, Aza Haranaka, Nishigo-mura Nishishirakawa-gun, Fukushima-ken / JP | |||
03 /
Fusegawa, Izumi, A-305, 355-3, Ohaza Odakura, Aza Haranaka, Nishigo-mura Nishishirakawa-gun, Fukushima-ken / JP | |||
04 /
Ohta, Tomohiko, 307, 89-2, Ohaza Odakura, Aza Haranaka, Nishigo-mura Nishishirakawa-gun, Fukushima-ken / JP | Representative(s) | Cooper, John, et al Murgitroyd & Company Scotland House 165-169 Scotland Street Glasgow G5 8PL / GB | [N/P] |
Former [1997/27] | Cooper, John, et al Murgitroyd & Company, Chartered Patent Agents, 373 Scotland Street Glasgow G5 8QA / GB | Application number, filing date | 96309408.1 | 23.12.1996 | [1997/27] | Priority number, date | JP19950353914 | 29.12.1995 Original published format: JP 35391495 | [1997/27] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0781876 | Date: | 02.07.1997 | Language: | EN | [1997/27] | Type: | B1 Patent specification | No.: | EP0781876 | Date: | 08.03.2000 | Language: | EN | [2000/10] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 01.04.1997 | Classification | IPC: | C30B15/30, C30B15/00, C30B29/06 | [1997/27] | CPC: |
C30B29/06 (EP,US);
C30B15/305 (EP,US);
Y10S117/917 (EP,US)
| Designated contracting states | DE, FR, GB [1997/27] | Title | German: | Verfahren und Vorrichtung zur Herstellung eines Einkristalles | [1997/27] | English: | Method and apparatus for production of single crystal | [1997/27] | French: | Procédé et appareillage pour la production d'un monocristal | [1997/27] | Examination procedure | 14.08.1997 | Examination requested [1997/41] | 21.10.1998 | Despatch of a communication from the examining division (Time limit: M06) | 09.04.1999 | Reply to a communication from the examining division | 23.06.1999 | Despatch of communication of intention to grant (Approval: Yes) | 10.09.1999 | Communication of intention to grant the patent | 22.11.1999 | Fee for grant paid | 22.11.1999 | Fee for publishing/printing paid | Opposition(s) | 09.12.2000 | No opposition filed within time limit [2001/08] | Fees paid | Renewal fee | 24.12.1998 | Renewal fee patent year 03 | 29.12.1999 | Renewal fee patent year 04 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FR | 08.03.2000 | [2006/14] |
Former [2001/16] | FR | 04.08.2000 | Documents cited: | Search | [PX]EP0745706 (SHINETSU HANDOTAI KK [JP]) [PX] 1,3,5,7-10 * claims 1-4 *; | [X]JPS6360189 ; | [A]US5178720 (FREDERICK ROGER A [US]); | [A]GB2143746 (TOSHIBA KK); | [A]GB2144338 (TOSHIBA KK); | [A]GB2163672 (TOSHIBA KK) | [X] - PATENT ABSTRACTS OF JAPAN, (19880801), vol. 12, no. 279, Database accession no. (C - 517), & JP63060189 A 00000000 (TOSHIBA CORP.) [X] 1,7 * abstract * | by applicant | US4565671 | JP19950353914 |