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Extract from the Register of European Patents

EP About this file: EP0788660

EP0788660 - SEMICONDUCTOR DEVICE OF HV-LDMOST TYPE [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  23.08.2002
Database last updated on 22.08.2024
Most recent event   Tooltip22.08.2008Change - applicantpublished on 24.09.2008  [2008/39]
Applicant(s)For all designated states
Koninklijke Philips Electronics N.V.
Groenewoudseweg 1
5621 BA Eindhoven / NL
[2008/39]
Former [2001/42]For all designated states
Koninklijke Philips Electronics N.V.
Groenewoudseweg 1
5621 BA Eindhoven / NL
Former [1997/33]For all designated states
PHILIPS ELECTRONICS N.V.
Groenewoudseweg 1
5621 BA Eindhoven / NL
Inventor(s)01 / LUDIKHUIZE, Adrianus, Willem
Groenewoudseweg 1
NL-5621 BA Eindhoven / NL
[1997/33]
Representative(s)Duijvestijn, Adrianus Johannes, et al
Philips Intellectual Property & Standards
High Tech Campus 5
5656 AE Eindhoven / NL
[N/P]
Former [2001/15]Duijvestijn, Adrianus Johannes, et al
Internationaal Octrooibureau B.V., Prof. Holstlaan 6
5656 AA Eindhoven / NL
Former [1997/33]Houbiers, Ernest Emile Marie Gerlach, et al
INTERNATIONAAL OCTROOIBUREAU B.V., Prof. Holstlaan 6
5656 AA Eindhoven / NL
Application number, filing date96921021.011.07.1996
[1997/33]
WO1996IB00678
Priority number, dateEP1995020198919.07.1995         Original published format: EP 95201989
[1997/33]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO9704488
Date:06.02.1997
Language:EN
[1997/07]
Type: A2 Application without search report 
No.:EP0788660
Date:13.08.1997
Language:EN
The application published by WIPO in one of the EPO official languages on 06.02.1997 takes the place of the publication of the European patent application.
[1997/33]
Type: B1 Patent specification 
No.:EP0788660
Date:17.10.2001
Language:EN
[2001/42]
Search report(s)International search report - published on:SE24.04.1997
ClassificationIPC:H01L29/78
[1997/33]
CPC:
H01L27/0251 (EP,US); H01L27/0255 (EP,US); H01L29/0878 (EP,US);
H01L29/78 (KR); H01L29/7816 (EP,US); H01L29/0619 (EP,US);
H01L29/1083 (EP,US); H01L29/1095 (EP,US); H01L29/402 (EP,US);
H01L29/41725 (EP,US); H01L29/41758 (EP,US) (-)
Designated contracting statesDE,   FR,   GB,   IT,   NL [1997/33]
TitleGerman:HALBLEITERANORDNUNG VOM HOCHSPANNUNGS-LDMOS-TYP[1997/33]
English:SEMICONDUCTOR DEVICE OF HV-LDMOST TYPE[1997/33]
French:COMPOSANT A SEMICONDUCTEUR DE TYPE TRANSISTOR LATERAL DMOS HAUTE TENSION[1997/33]
Entry into regional phase21.04.1997National basic fee paid 
21.04.1997Designation fee(s) paid 
06.08.1997Examination fee paid 
Examination procedure06.08.1997Examination requested  [1997/41]
13.11.1998Despatch of a communication from the examining division (Time limit: M06)
29.04.1999Reply to a communication from the examining division
14.12.2000Despatch of communication of intention to grant (Approval: Yes)
29.03.2001Communication of intention to grant the patent
09.07.2001Fee for grant paid
09.07.2001Fee for publishing/printing paid
Opposition(s)18.07.2002No opposition filed within time limit [2002/41]
Fees paidRenewal fee
31.07.1998Renewal fee patent year 03
02.08.1999Renewal fee patent year 04
31.07.2000Renewal fee patent year 05
31.07.2001Renewal fee patent year 06
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipIT17.10.2001
NL17.10.2001
[2008/06]
Former [2003/09]NL17.10.2001
Cited inInternational search[A]EP0514060  (SILICONIX INC [US]);
 [A]EP0550015  (TEXAS INSTRUMENTS INC [US]);
 [A]EP0634798  (PHILIPS ELECTRONICS NV [NL]);
 [A]US5369045  (NG WIA T [CA], et al);
 [A]US5382536  (MALHI SATWINDER [US], et al);
 [A]GB2150746  (HABIB SERAG EL DIN EL SAYED)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.