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Extract from the Register of European Patents

EP About this file: EP0853818

EP0853818 - LOW VOLTAGE SHORT CHANNEL TRENCH DMOS TRANSISTOR [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  08.01.1999
Database last updated on 02.09.2024
Most recent event   Tooltip08.01.1999Withdrawal of applicationpublished on 24.02.1999 [1999/08]
Applicant(s)For all designated states
SILICONIX Incorporated
2201 Laurelwood Road
Santa Clara, California 95054 / US
[N/P]
Former [1998/30]For all designated states
SILICONIX Incorporated
2201 Laurelwood Road
Santa Clara California 95054 / US
Inventor(s)01 / PITZER, Dorman, C.
204 Lakeridge Way
San Ramon, CA 94583 / US
02 / HSHIEH, Fwu-Iuan
20768 Sevilla Lane
Saratoga, CA 95070 / US
03 / CHANG, Mike, F.
10343 S. Blaney Avenue
Cupertino, CA 95014 / US
[1998/30]
Representative(s)Kolb, Georg
Daimler AG
Intellectual Property Management
IPM, C106
70546 Stuttgart / DE
[N/P]
Former [1998/30]Kolb, Georg
Daimler-Benz AG, Postfach 35 35
74025 Heilbronn / DE
Application number, filing date96927387.915.08.1996
[1998/30]
WO1996US13039
Priority number, dateUS1995053715621.08.1995         Original published format: US 537156
[1998/30]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO9707548
Date:27.02.1997
Language:EN
[1997/10]
Type: A1 Application with search report 
No.:EP0853818
Date:22.07.1998
Language:EN
The application published by WIPO in one of the EPO official languages on 27.02.1997 takes the place of the publication of the European patent application.
[1998/30]
Search report(s)International search report - published on:US27.02.1997
(Supplementary) European search report - dispatched on:EP23.09.1998
ClassificationIPC:H01L29/78, H01L21/336
[1998/45]
CPC:
H01L29/1095 (EP); H01L29/7827 (EP); H01L29/42368 (EP)
Former IPC [1998/30]H01L29/78
Designated contracting statesDE,   FR,   GB,   IT,   NL [1998/30]
TitleGerman:NIEDERSPANNUNGS-KURZKANAL-GRABEN-DMOS-TRANSISTOR[1998/30]
English:LOW VOLTAGE SHORT CHANNEL TRENCH DMOS TRANSISTOR[1998/30]
French:TRANSISTOR MOS A DOUBLE DIFFUSION EN TRANCHEES A CANAL COURT BASSE TENSION[1998/30]
Entry into regional phase10.03.1998National basic fee paid 
10.03.1998Search fee paid 
10.03.1998Designation fee(s) paid 
10.03.1998Examination fee paid 
Examination procedure19.03.1997Request for preliminary examination filed
International Preliminary Examining Authority: US
10.03.1998Examination requested  [1998/30]
16.12.1998Application withdrawn by applicant  [1999/08]
Fees paidRenewal fee
05.08.1998Renewal fee patent year 03
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[PX]EP0717450  (MITSUBISHI ELECTRIC CORP) [PX] 11-14,17,18 * column 18, line 1 - column 23, line 9; figures 1-19 *;
 [X]US5385853  (MOHAMMAD S NOOR) [X] 11 * column 3, lines 15-29; figure 1K; claims 1-4 *;
 [Y]US4767722  (BLANCHARD RICHARD A) [Y] 1,2,4-21 * column 5, line 14 - column 5, line 35; figures 5,6 *;
 [Y]JPS5674960  ;
 [A]US4369564  (HILTPOLD WILLIAM R) [A] 1,2,4-21 * column 2, line 51 - column 2, line 53; figure 2 *;
 [A]US5298780  (HARADA MASANA) [A] 1 * figure 19 *;
 [A]US5021845  (HASHIMOTO MASASHI) [A] 1,2,4-21 * abstract *;
 [A]US4814839  (NISHIZAWA JUN-ICHI ET AL) [A] 1,10,11 * column 10, line 8 - column 10, line 55; figure 9C *
 [Y]  - PATENT ABSTRACTS OF JAPAN, (19810905), vol. 005, no. 141, Database accession no. (E - 073), & JP56074960 A 19810620 (TOSHIBA CORP) [Y] 1,2,4-21 * abstract *
International search[X]GB2026239  ;
 [Y]EP0580452  ;
 [Y]US5341011
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.