EP0853819 - MOS TRANSISTOR WITH HIGH OUTPUT VOLTAGE ENDURANCE [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 01.12.2000 Database last updated on 03.09.2024 | Most recent event Tooltip | 01.12.2000 | No opposition filed within time limit | published on 17.01.2001 [2001/03] | Applicant(s) | For all designated states ELMOS Semiconductor AG Heinrich-Hertz-Strasse 1 44227 Dortmund / DE | [N/P] |
Former [1999/35] | For all designated states ELMOS Semiconductor AG Heinrich-Hertz-Strasse 1 44227 Dortmund / DE | ||
Former [1998/30] | For all designated states El Mos Elektronik in Mos-Technologie GMBH Joseph-von-Fraunhofer-Srasse 9 44227 Dortmund / DE | Inventor(s) | 01 /
ROTH, Walter Am Oespeler Dorney 2 D-44149 Dortmund / DE | 02 /
GIEBEL, Thomas Arneckestrasse 35 D-44139 Dortmund / DE | [1998/30] | Representative(s) | dompatent von Kreisler Selting Werner - Partnerschaft von Patent- und Rechtsanwälten mbB Deichmannhaus am Dom Bahnhofsvorplatz 1 50667 Köln / DE | [N/P] |
Former [1998/30] | Hilleringmann, Jochen, Dipl.-Ing., et al Patentanwälte von Kreisler-Selting-Werner, Bahnhofsvorplatz 1 (Deichmannhaus) 50667 Köln / DE | Application number, filing date | 96934486.0 | 28.09.1996 | [1998/30] | WO1996EP04246 | Priority number, date | DE1995136753 | 02.10.1995 Original published format: DE 19536753 | [1998/30] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | WO9713277 | Date: | 10.04.1997 | Language: | DE | [1997/16] | Type: | A1 Application with search report | No.: | EP0853819 | Date: | 22.07.1998 | Language: | DE | The application published by WIPO in one of the EPO official languages on 10.04.1997 takes the place of the publication of the European patent application. | [1998/30] | Type: | B1 Patent specification | No.: | EP0853819 | Date: | 02.02.2000 | Language: | DE | [2000/05] | Search report(s) | International search report - published on: | EP | 10.04.1997 | Classification | IPC: | H01L29/78, H01L21/336 | [1998/30] | CPC: |
H01L29/66659 (EP,US);
H01L29/0847 (EP,US);
H01L29/1045 (EP,US);
H01L29/7835 (EP,US);
H01L21/266 (EP,US);
H01L29/0634 (EP,US);
H01L29/42368 (EP,US)
(-)
| Designated contracting states | AT, BE, CH, DE, FR, GB, IE, IT, LI, NL [1998/30] | Title | German: | MOS-TRANSISTOR MIT HOHER AUSGANGSSPANNUNGSFESTIGKEIT | [1998/30] | English: | MOS TRANSISTOR WITH HIGH OUTPUT VOLTAGE ENDURANCE | [1998/30] | French: | TRANSISTOR MOS A HAUTE RIGIDITE DIELECTRIQUE DE SORTIE | [1998/30] | Entry into regional phase | 12.03.1998 | National basic fee paid | 12.03.1998 | Designation fee(s) paid | 12.03.1998 | Examination fee paid | Examination procedure | 25.04.1997 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 12.03.1998 | Examination requested [1998/30] | 22.10.1998 | Despatch of a communication from the examining division (Time limit: M04) | 26.02.1999 | Reply to a communication from the examining division | 15.04.1999 | Despatch of communication of intention to grant (Approval: Yes) | 26.07.1999 | Communication of intention to grant the patent | 20.10.1999 | Fee for grant paid | 20.10.1999 | Fee for publishing/printing paid | Opposition(s) | 03.11.2000 | No opposition filed within time limit [2001/03] | Fees paid | Renewal fee | 26.09.1998 | Renewal fee patent year 03 | 30.09.1999 | Renewal fee patent year 04 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A]JPS58140165 ; | [A]EP0110320 (NISSAN MOTOR [JP]) [A] 10 * abstract *; | [A]DE3816002 (INT RECTIFIER CORP [US]) [A] 6,7* column 13, line 11 - column 14, line 20; figures 7-12 *; | [A]EP0386779 (TOSHIBA KK [JP]) [A] 5,12 * figures 1C,2 *; | [Y]EP0400934 (GEN ELECTRIC [US]) [Y] 1-3,11 * the whole document *; | [X]EP0637846 (SILICONIX INC [US]) [X] 1-4,11 * abstract *; | [A]DE4336054 (BOSCH GMBH ROBERT [DE]) [A] 6,9 * the whole document *; | [Y]EP0660419 (TEXAS INSTRUMENTS INC [US], et al) [Y] 1-3,11 * page 2, line 53 - page 3, line 11; figures 1-3 * | [A] - PATENT ABSTRACTS OF JAPAN, (19831112), vol. 007, no. 255, Database accession no. (E - 210), & JP58140165 A 19830819 (ROOMU KK) [A] 8 * abstract * |