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Extract from the Register of European Patents

EP About this file: EP0864172

EP0864172 - PROCESS FOR PRODUCING AN INTEGRATED CIRCUIT DEVICE WITH AT LEAST ONE MOS TRANSISTOR [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  09.08.2002
Database last updated on 31.08.2024
Most recent event   Tooltip09.08.2002No opposition filed within time limitpublished on 25.09.2002  [2002/39]
Applicant(s)For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81669 München / DE
[2001/18]
Former [1998/38]For all designated states
SIEMENS AKTIENGESELLSCHAFT
Wittelsbacherplatz 2
80333 München / DE
Inventor(s)01 / SCHWALKE, Udo
Gewerbestrasse 22
D-84431 Heldenstein / DE
[1998/38]
Representative(s)Zedlitz, Peter, et al
OSRAM GmbH
Intellectual Property IP
Postfach 22 13 17
80503 München / DE
[N/P]
Former [2001/18]Zedlitz, Peter, Dipl.-Inf., et al
Patentanwalt, Postfach 22 13 17
80503 München / DE
Application number, filing date96945866.007.11.1996
[1998/38]
WO1996DE02121
Priority number, dateDE199514472130.11.1995         Original published format: DE 19544721
[1998/38]
Filing languageDE
Procedural languageDE
PublicationType: A2 Application without search report
No.:WO9720336
Date:05.06.1997
Language:DE
[1997/24]
Type: A2 Application without search report 
No.:EP0864172
Date:16.09.1998
Language:DE
The application published by WIPO in one of the EPO official languages on 05.06.1997 takes the place of the publication of the European patent application.
[1998/38]
Type: B1 Patent specification 
No.:EP0864172
Date:04.10.2001
Language:DE
[2001/40]
Search report(s)International search report - published on:EP28.08.1997
ClassificationIPC:H01L21/28, H01L21/336
[1998/38]
CPC:
H01L21/84 (EP,US); H01L21/18 (KR); H01L29/66628 (EP)
Designated contracting statesAT,   DE,   FR,   GB,   IE,   IT,   NL [1998/38]
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINER INTEGRIERTEN SCHALTUNGSANORDNUNG MIT MINDESTENS EINEM MOS-TRANSISTOR[1998/38]
English:PROCESS FOR PRODUCING AN INTEGRATED CIRCUIT DEVICE WITH AT LEAST ONE MOS TRANSISTOR[1998/38]
French:PROCEDE DE FABRICATION D'UN DISPOSITIF A CIRCUITS INTEGRES EQUIPE D'AU MOINS UN TRANSISTOR MOS[1998/38]
Entry into regional phase19.05.1998National basic fee paid 
19.05.1998Designation fee(s) paid 
19.05.1998Examination fee paid 
Examination procedure27.06.1997Request for preliminary examination filed
International Preliminary Examining Authority: EP
19.05.1998Examination requested  [1998/38]
21.05.1999Despatch of a communication from the examining division (Time limit: M06)
09.11.1999Reply to a communication from the examining division
12.12.2000Despatch of communication of intention to grant (Approval: Yes)
06.04.2001Communication of intention to grant the patent
20.06.2001Fee for grant paid
20.06.2001Fee for publishing/printing paid
Opposition(s)05.07.2002No opposition filed within time limit [2002/39]
Fees paidRenewal fee
17.11.1998Renewal fee patent year 03
18.11.1999Renewal fee patent year 04
20.11.2000Renewal fee patent year 05
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Cited inInternational search[YA]EP0115131  (TOKYO SHIBAURA ELECTRIC CO [JP]) [Y] 1-3,5-8 * page 7 - page 9; figure 11 * [A] 4;
 [A]EP0373893  (MITSUBISHI ELECTRIC CORP [JP]) [A] 1-8* the whole document *;
 [YA]EP0442296  (HUGHES AIRCRAFT CO [US]) [Y] 1-3,5-8 * column 3, line 58 - column 5, line 47; figures 1,2 * [A] 4;
 [YA]US5144390  (MATLOUBIAN MISHEL [US]) [Y] 1-3,5-8 * column 4, line 4 - column 5, line 31; figures 1,2 * [A] 4;
 [YA]US5177028  (MANNING MONTE [US]) [Y] 1-3,5-8 * column 4, line 3 - column 5, line 31; figures 8-13 * [A] 4;
 [YA]US5294823  (EKLUND ROBERT H [US], et al) [Y] 1-3,5-8 * column 3, line 26 - column 6, line 5; figure 11 * [A] 4
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.