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Extract from the Register of European Patents

EP About this file: EP0801427

EP0801427 - Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  31.03.2000
Database last updated on 13.09.2024
Most recent event   Tooltip31.03.2000Application deemed to be withdrawnpublished on 17.05.2000 [2000/20]
Applicant(s)For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Oaza Kadoma Kadoma-shi Osaka
571-8501 / JP
[N/P]
Former [1997/42]For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Oaza Kadoma
Kadoma-shi, Osaka-fu, 571 / JP
Inventor(s)01 / Morii, Tomoyuki
3-4-10, Makami-cho
Takatsuki-shi, Osaka 569-11 / JP
[1997/42]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstrasse 4
80802 München / DE
[N/P]
Former [1997/42]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Maximilianstrasse 58
80538 München / DE
Application number, filing date97105778.108.04.1997
[1997/42]
Priority number, dateJP1996008923411.04.1996         Original published format: JP 8923496
JP1996009235315.04.1996         Original published format: JP 9235396
[1997/42]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0801427
Date:15.10.1997
Language:EN
[1997/42]
Type: A3 Search report 
No.:EP0801427
Date:06.05.1999
[1999/18]
Search report(s)(Supplementary) European search report - dispatched on:EP19.03.1999
ClassificationIPC:H01L29/786, H01L29/788, H01L29/10, H01L29/49, H01L29/32, H01L21/336, H01L21/265, H01L21/30, H01L21/322
[1998/51]
CPC:
H01L29/78696 (EP,US); H01L21/3003 (EP,US); H01L29/1033 (EP,US);
H01L29/1054 (EP,US); H01L29/42324 (EP,US); H01L29/66757 (EP,US);
H01L29/66825 (EP,US); H01L29/78675 (EP,US); H01L29/7885 (EP,US) (-)
Former IPC [1997/42]H01L29/786, H01L29/10, H01L29/788, H01L29/49
Designated contracting statesDE,   FR,   GB,   NL [1997/42]
TitleGerman:Feldeffekttransistor, Halbleiter-Speicheranordnung, Verfahren zur Herstellung und Verfahren zum Steuern der Halbleiter-Speicheranordnung[1997/42]
English:Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device[1997/42]
French:Transistor à effet de champ, dispositif de stockage semi-conducteur, méthode de fabrication et méthode de commande du dispositif de stockage semi-conducteur[1997/42]
Examination procedure31.10.1999Application deemed to be withdrawn, date of legal effect  [2000/20]
01.12.1999Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2000/20]
Fees paidPenalty fee
Penalty fee Rule 85b EPC 1973
27.01.2000M01   Not yet paid
Additional fee for renewal fee
30.04.199903   M06   Not yet paid
Opt-out from the exclusive  Tooltip
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[X]JPS6425573  ;
 [A]US4957877  (TAM SIMON M [US], et al) [A] 13,27;
 [A]JPS59125648  ;
 [A]FR2681472  (COMMISSARIAT ENERGIE ATOMIQUE [FR]) [A] 22,23,27,28 * page 9, line 16 - line 29; figures 1,2 *;
 [PXPA]JPH098313
 [XA]  - MIYASAKA M ET AL, "EFFECTS OF SEMICONDUCTOR THICKNESS ON POLY-CRYSTALLINE SILICON THINFILM TRANSISTORS", JAPANESE JOURNAL OF APPLIED PHYSICS, (199602), vol. 35, no. 2B, pages 923 - 929, XP000701012 [X] 1,3,4 * page 925, column R, line 10 - line 35; figures 1,7,8 * * paragraph 2. "Experiment" * [A] 22

DOI:   http://dx.doi.org/10.1143/JJAP.35.923
 [X]  - PATENT ABSTRACTS OF JAPAN, (19890518), vol. 013, no. 213, Database accession no. (E - 759), & JP01025573 A 19890127 (HITACHI LTD) [X] 1-4,22 * abstract *
 [A]  - HUANG J ET AL, "Study of argon and silicon implantation damage in polycrystalline silicon", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MAY 1986, USA, ISSN 0013-4651, vol. 133, no. 5, pages 993 - 995, XP002081538 [A] 1-4,22 * abstract * * page 995, column L, line 15 - line 22 *
 [A]  - CAO M ET AL, "STUDY ON HYDROGENATION OF POLYSILICON THIN FILM TRANSISTORS BY ION IMPLANTATION", IEEE TRANSACTIONS ON ELECTRON DEVICES, (199506), vol. 42, no. 6, pages 1134 - 1140, XP000517158 [A] 1,3,22,23 * paragraph [0II.] * * paragraph [III.C.] *

DOI:   http://dx.doi.org/10.1109/16.387248
 [A]  - PATENT ABSTRACTS OF JAPAN, (19841116), vol. 008, no. 250, Database accession no. (E - 279), & JP59125648 A 19840720 (OKI DENKI KOGYO KK) [A] 1,13,22,23,27,28 * abstract *
 [PXA]  - PATENT ABSTRACTS OF JAPAN, (19970530), vol. 097, no. 005, & JP09008313 A 19970110 (SHARP CORP) [PX] 1,3,22 * abstract * [PA] 23
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.