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Extract from the Register of European Patents

EP About this file: EP0840366

EP0840366 - Method of forming a phosphorus doped silica glass film [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  07.06.2002
Database last updated on 05.10.2024
Most recent event   Tooltip07.06.2002No opposition filed within time limitpublished on 24.07.2002  [2002/30]
Applicant(s)For all designated states
CANON SALES CO., INC.
11-28, Mita 3-chome, Minato-ku
Tokyo 108 / JP
For all designated states
SEMICONDUCTOR PROCESS LABORATORY CO., LTD.
13-29, Konan 2-chome Minato-ku
Tokyo 108 / JP
[N/P]
Former [1998/19]For all designated states
CANON SALES CO., INC.
11-28, Mita 3-chome
Minato-ku, Tokyo 108 / JP
For all designated states
SEMICONDUCTOR PROCESS LABORATORY CO., LTD.
13-29, Konan 2-chome
Minato-ku, Tokyo 108 / JP
Inventor(s)01 / Tokumasu, Noboru
c/o Semiconductor Process Laboratory Co., Ltd.
13-29, Konan 2-chome, Minato-ku, Tokyo / JP
02 / Maeda, Kazuo
c/o Semiconductor Process Laboratory Co., Ltd.
13-29, Konan 2-chome, Minato-ku, Tokyo / JP
[1998/19]
Representative(s)Marx, Lothar
Schwabe - Sandmair - Marx
Patentanwälte
Postfach 86 02 45
81629 München / DE
[N/P]
Former [1998/19]Marx, Lothar, Dr.
Patentanwälte Schwabe, Sandmair, Marx Stuntzstrasse 16
81677 München / DE
Application number, filing date97108763.002.06.1997
[1998/19]
Priority number, dateJP1996028878730.10.1996         Original published format: JP 28878796
[1998/19]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0840366
Date:06.05.1998
Language:EN
[1998/19]
Type: A3 Search report 
No.:EP0840366
Date:27.01.1999
[1999/04]
Type: B1 Patent specification 
No.:EP0840366
Date:01.08.2001
Language:EN
[2001/31]
Search report(s)(Supplementary) European search report - dispatched on:EP10.12.1998
ClassificationIPC:H01L21/316
[1998/19]
CPC:
C23C16/401 (EP,KR,US); H01L21/02274 (EP,KR,US); H01L21/02129 (EP,KR,US);
H01L21/02145 (KR); H01L21/02271 (EP,US); H01L21/02337 (EP,KR,US);
H01L21/31625 (US); H01L21/324 (KR); H01L21/02126 (EP);
H01L21/02131 (EP); H01L21/02216 (EP) (-)
Designated contracting statesDE,   FR,   GB,   NL [1998/19]
TitleGerman:Herstellungsmethode eines Phosphor-gedopten Silica-Glasfilms[1998/19]
English:Method of forming a phosphorus doped silica glass film[1998/19]
French:Méthode de fabrication d'une couche de silica dopée par phosphore[1998/19]
Examination procedure05.02.1999Request for accelerated examination filed
17.02.1999Examination requested  [1999/15]
23.04.1999Despatch of a communication from the examining division (Time limit: M06)
23.04.1999Decision about request for accelerated examination - accepted: Yes
28.09.1999Reply to a communication from the examining division
21.01.2000Despatch of a communication from the examining division (Time limit: M02)
17.03.2000Reply to a communication from the examining division
22.11.2000Despatch of communication of intention to grant (Approval: Yes)
29.01.2001Communication of intention to grant the patent
11.04.2001Fee for grant paid
11.04.2001Fee for publishing/printing paid
Opposition(s)03.05.2002No opposition filed within time limit [2002/30]
Fees paidRenewal fee
31.05.1999Renewal fee patent year 03
31.05.2000Renewal fee patent year 04
31.05.2001Renewal fee patent year 05
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Documents cited:Search[A]EP0339385  (SIEMENS AG [DE]) [A] 1-6,11,12 * page 7, line 21 - page 8, line 15 * * page 10, line 11 - page 11, line 9 *;
 [A]EP0562625  (MATSUSHITA ELECTRIC IND CO LTD [JP]) [A] 1-12 * page 4, line 13 - page 5, line 35 ** page 7, line 22 - line 28; table . *;
 [A]EP0624660  (IBM [US]) [A] 1,3-6,9-11 * column 2, line 42 - column 3, line 22 * * column 4, line 44 - column 6, line 43; claims 1,2,4,5 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.