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EP0817252
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EP Citations: EP0817252
| Cited in | Search | Type: | Patent literature | Publication No.: | JPH0278229
[X] ; | Type: | Patent literature | Publication No.: | US4764478
[A] (HIRUTA YOICHI [JP]) [A] 5-11* column 4, line 22 - column 5, line 48 *; | Type: | Patent literature | Publication No.: | US5393676
[XY] (ANJUM MOHAMMED [US], et al) [X] 1 * abstract * * column 6, line 28 - line 53 * [Y] 2-4; | Type: | Patent literature | Publication No.: | US5464792
[Y] (TSENG HSING-HUANG [US], et al) [Y] 2-4 * column 3, line 43 - column 4, line 14; figures 1-4 * * column 6, line 53 - column 7, line 29; figure 9 *; | Type: | Non-patent literature | Publication information: | [X] - PATENT ABSTRACTS OF JAPAN, (19900604), vol. 014, no. 257, Database accession no. (E - 0936), & JP02078229 A 19900319 (NEC CORP) [X] 1-4 * abstract * | Type: | Non-patent literature | Publication information: | [X] - SHIMIZU S ET AL, "IMPACT OF NITROGEN IMPLANTATION ON HIGHLY RELIABLE SUB-QUARTER MICRON LDD MOSFETS", INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, (19950821), pages 219 - 221, XP000544607 [X] 1 * page 219, column L; figure 1A * | Type: | Non-patent literature | Publication information: | [X] - SUN W T ET AL, "Process optimization for preventing boron-penetration using P or As co-implant in P-poly gate of P-MOSFETs", 1995 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS. PROCEEDINGS OF TECHNICAL PAPERS (CAT. NO.95TH8104), 1995 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS. PROCEEDINGS OF TECHNICAL PAPERS, TAIPEI, TAIWA, ISBN 0-7803-2773-X, 1995, New York, NY, USA, IEEE, USA, pages 40 - 43, XP002098813 [X] 5-11 * abstract * | Type: | Non-patent literature | Publication information: | [X] - PFIESTER J R ET AL, "The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices", IEEE TRANSACTIONS ON ELECTRON DEVICES, AUG. 1990, USA, ISSN 0018-9383, vol. 37, no. 8, pages 1842 - 1851, XP000148765 [X] 5-11 * abstract * | DOI: | http://dx.doi.org/10.1109/16.57135 |