EP0834926 - Semiconductor device controllable by field effect [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 23.08.2002 Database last updated on 22.08.2024 | Most recent event Tooltip | 27.06.2008 | Change - representative | published on 30.07.2008 [2008/31] | Applicant(s) | For all designated states Infineon Technologies AG St.-Martin-Strasse 53 81669 München / DE | [2001/12] |
Former [1998/15] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 80333 München / DE | Inventor(s) | 01 /
Tihanyi, Jenö, Dr.-Ing. Isarweg 13 85551 Kirchheim / DE | [1998/15] | Representative(s) | Westphal, Mussgnug & Partner Patentanwälte mbB Werinherstrasse 79 81541 München / DE | [N/P] |
Former [2008/31] | Patentanwälte Westphal, Mussgnug & Partner Herzog-Wilhelm-Strasse 26 80331 München / DE | ||
Former [2001/16] | Patentanwälte Westphal, Mussgnug & Partner Mozartstrasse 8 80336 München / DE | Application number, filing date | 97114661.8 | 25.08.1997 | [1998/15] | Priority number, date | DE1996138437 | 19.09.1996 Original published format: DE 19638437 | [1998/15] | Filing language | DE | Procedural language | DE | Publication | Type: | A2 Application without search report | No.: | EP0834926 | Date: | 08.04.1998 | Language: | DE | [1998/15] | Type: | A3 Search report | No.: | EP0834926 | Date: | 26.08.1998 | [1998/35] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 10.07.1998 | Classification | IPC: | H01L29/08, H01L29/78, H01L29/423 | [1998/15] | CPC: |
H01L29/1037 (EP);
H01L29/78 (KR);
H01L29/7809 (US);
H01L29/4236 (EP);
H01L29/42368 (EP);
H01L29/7834 (EP)
| Designated contracting states | DE, FR, GB, IE, IT [1999/19] |
Former [1998/15] | AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Durch Feldeffekt steuerbares Halbleiterbauelement | [1998/15] | English: | Semiconductor device controllable by field effect | [1998/15] | French: | Dispositif semiconducteur contrôlable par effet de champ | [1998/15] | Examination procedure | 05.02.1999 | Examination requested [1999/14] | 14.05.2001 | Request for accelerated examination filed | 11.06.2001 | Despatch of a communication from the examining division (Time limit: M04) | 11.06.2001 | Decision about request for accelerated examination - accepted: Yes | 17.08.2001 | Reply to a communication from the examining division | 26.09.2001 | Despatch of a communication from the examining division (Time limit: M06) | 09.04.2002 | Application deemed to be withdrawn, date of legal effect [2002/41] | 13.05.2002 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2002/41] | Fees paid | Renewal fee | 20.08.1999 | Renewal fee patent year 03 | 17.08.2000 | Renewal fee patent year 04 | 23.08.2001 | Renewal fee patent year 05 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]US4243997 (NATORI KENJI, et al) [X] 1,5,6,8-10 * figure 19 * [A] 2,7; | [Y]US4830975 (BOVAIRD ARTHUR J [US], et al) [Y] 2 * figures 16,28 *; | [X]US5142640 (IWAMATSU SEIICHI [JP]) [X] 1,2,5 * figure 3 *; | [A]US5164325 (COGAN ADRIAN I [US], et al) [A] 2 * figure 2 *; | [XY] - KATSUHIKO HIEDA, "SUB-HALF-MICROMETER CONCAVE MOSFET WITH DOUBLE LDD STRUCTURE", IEEE TRANSACTIONS ON ELECTRON DEVICES, (19920301), vol. 39, no. 3, pages 671 - 676, XP000249177 [X] 1,5-10 * figure 7 * [Y] 2 DOI: http://dx.doi.org/10.1109/16.123493 | [A] - HOSHI M ET AL, "LOW ON-RESISTANCE LDMOSFETS WITH DSS (A DRAIN WINDOW SURROUNDED BY SOURCE WINDOWS) PATTERN LAYOUT", PROCEEDINGS OF THE 7TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC'S. (ISPSD), YOKOHAMA, MAY 23 - 25, 1995, INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, (19950523), no. SYMP., pages 63 - 67, XP000594242 [A] 1 * figure 1 * DOI: http://dx.doi.org/10.1109/ISPSD.1995.515010 |