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Extract from the Register of European Patents

EP About this file: EP0834926

EP0834926 - Semiconductor device controllable by field effect [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  23.08.2002
Database last updated on 22.08.2024
Most recent event   Tooltip27.06.2008Change - representativepublished on 30.07.2008  [2008/31]
Applicant(s)For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81669 München / DE
[2001/12]
Former [1998/15]For all designated states
SIEMENS AKTIENGESELLSCHAFT
Wittelsbacherplatz 2
80333 München / DE
Inventor(s)01 / Tihanyi, Jenö, Dr.-Ing.
Isarweg 13
85551 Kirchheim / DE
[1998/15]
Representative(s)Westphal, Mussgnug & Partner Patentanwälte mbB
Werinherstrasse 79
81541 München / DE
[N/P]
Former [2008/31]Patentanwälte Westphal, Mussgnug & Partner
Herzog-Wilhelm-Strasse 26
80331 München / DE
Former [2001/16]Patentanwälte Westphal, Mussgnug & Partner
Mozartstrasse 8
80336 München / DE
Application number, filing date97114661.825.08.1997
[1998/15]
Priority number, dateDE199613843719.09.1996         Original published format: DE 19638437
[1998/15]
Filing languageDE
Procedural languageDE
PublicationType: A2 Application without search report 
No.:EP0834926
Date:08.04.1998
Language:DE
[1998/15]
Type: A3 Search report 
No.:EP0834926
Date:26.08.1998
[1998/35]
Search report(s)(Supplementary) European search report - dispatched on:EP10.07.1998
ClassificationIPC:H01L29/08, H01L29/78, H01L29/423
[1998/15]
CPC:
H01L29/1037 (EP); H01L29/78 (KR); H01L29/7809 (US);
H01L29/4236 (EP); H01L29/42368 (EP); H01L29/7834 (EP)
Designated contracting statesDE,   FR,   GB,   IE,   IT [1999/19]
Former [1998/15]AT,  BE,  CH,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Durch Feldeffekt steuerbares Halbleiterbauelement[1998/15]
English:Semiconductor device controllable by field effect[1998/15]
French:Dispositif semiconducteur contrôlable par effet de champ[1998/15]
Examination procedure05.02.1999Examination requested  [1999/14]
14.05.2001Request for accelerated examination filed
11.06.2001Despatch of a communication from the examining division (Time limit: M04)
11.06.2001Decision about request for accelerated examination - accepted: Yes
17.08.2001Reply to a communication from the examining division
26.09.2001Despatch of a communication from the examining division (Time limit: M06)
09.04.2002Application deemed to be withdrawn, date of legal effect  [2002/41]
13.05.2002Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2002/41]
Fees paidRenewal fee
20.08.1999Renewal fee patent year 03
17.08.2000Renewal fee patent year 04
23.08.2001Renewal fee patent year 05
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XA]US4243997  (NATORI KENJI, et al) [X] 1,5,6,8-10 * figure 19 * [A] 2,7;
 [Y]US4830975  (BOVAIRD ARTHUR J [US], et al) [Y] 2 * figures 16,28 *;
 [X]US5142640  (IWAMATSU SEIICHI [JP]) [X] 1,2,5 * figure 3 *;
 [A]US5164325  (COGAN ADRIAN I [US], et al) [A] 2 * figure 2 *;
 [XY]  - KATSUHIKO HIEDA, "SUB-HALF-MICROMETER CONCAVE MOSFET WITH DOUBLE LDD STRUCTURE", IEEE TRANSACTIONS ON ELECTRON DEVICES, (19920301), vol. 39, no. 3, pages 671 - 676, XP000249177 [X] 1,5-10 * figure 7 * [Y] 2

DOI:   http://dx.doi.org/10.1109/16.123493
 [A]  - HOSHI M ET AL, "LOW ON-RESISTANCE LDMOSFETS WITH DSS (A DRAIN WINDOW SURROUNDED BY SOURCE WINDOWS) PATTERN LAYOUT", PROCEEDINGS OF THE 7TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC'S. (ISPSD), YOKOHAMA, MAY 23 - 25, 1995, INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, (19950523), no. SYMP., pages 63 - 67, XP000594242 [A] 1 * figure 1 *

DOI:   http://dx.doi.org/10.1109/ISPSD.1995.515010
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.