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EP0827210
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EP About this file: EP0827210
| EP0827210 - Thin-film transistor and fabrication method thereof [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 18.03.2005 Database last updated on 03.09.2024 | Most recent event Tooltip | 18.03.2005 | Withdrawal of application | published on 04.05.2005 [2005/18] | Applicant(s) | For all designated states NEC LCD Technologies, Ltd. 1753 Shimonumabe Nakahara-ku Kawasaki, Kanagawa 211-8666 / JP | [N/P] |
| Former [2003/39] | For all designated states NEC LCD Technologies, Ltd. 1753 Shimonumabe Nakahara-ku Kawasaki, Kanagawa 211-8666 / JP | ||
| Former [1998/10] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | Inventor(s) | 01 /
Noguchi, Kesao NEC Corporation, 7-1, Shiba 5-chome Minato-ku, Tokyo / JP | [1998/10] | Representative(s) | Glawe, Delfs, Moll Partnerschaft mbB von Patent- und Rechtsanwälten Postfach 26 01 62 80058 München / DE | [N/P] |
| Former [1998/10] | Glawe, Delfs, Moll & Partner Patentanwälte Postfach 26 01 62 80058 München / DE | Application number, filing date | 97115034.7 | 29.08.1997 | [1998/10] | Priority number, date | JP19960228733 | 29.08.1996 Original published format: JP 22873396 | [1998/10] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0827210 | Date: | 04.03.1998 | Language: | EN | [1998/10] | Type: | A3 Search report | No.: | EP0827210 | Date: | 16.12.1998 | [1998/51] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.10.1998 | Classification | IPC: | H01L29/786, H01L21/336 | [1998/10] | CPC: |
H01L29/66765 (EP,US);
H01L29/772 (KR);
H01L29/78666 (EP,US);
H01L29/78669 (EP,US)
| Designated contracting states | DE, FR, NL [1999/34] |
| Former [1998/10] | AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Dünnfilmtransistor und dessen Herstellungsverfahren | [1998/10] | English: | Thin-film transistor and fabrication method thereof | [1998/10] | French: | Transistor à couche mince et son procédé de fabrication | [1998/10] | Examination procedure | 13.11.1998 | Examination requested [1999/02] | 28.01.1999 | Despatch of a communication from the examining division (Time limit: M06) | 09.08.1999 | Reply to a communication from the examining division | 10.09.1999 | Despatch of a communication from the examining division (Time limit: M06) | 20.03.2000 | Reply to a communication from the examining division | 15.03.2005 | Application withdrawn by applicant [2005/18] | 15.04.2005 | Date of oral proceedings | Fees paid | Renewal fee | 19.08.1999 | Renewal fee patent year 03 | 21.08.2000 | Renewal fee patent year 04 | 20.08.2001 | Renewal fee patent year 05 | 21.08.2002 | Renewal fee patent year 06 | 20.08.2003 | Renewal fee patent year 07 | 20.08.2004 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]EP0361609 (PHILIPS ELECTRONICS UK LTD [GB], et al) [X] 1-4,6,7 * page 4, column 5, line 29 - column 6, line 51; figures 1A-2B *; | [X]US5289016 (NOGUCHI KESAO [JP]) [X] 1,4-6,10,11 * column 3, line 61 - column 4, line 2; figures 1-4 *; | [D]JPH046878 (NEC CORP); | [DA]JPH01276767 | [DA] - PATENT ABSTRACTS OF JAPAN, (19900126), vol. 014, no. 045, Database accession no. (E - 0880), & JP01276767 A 19891107 (FUJITSU LTD) [DA] 5,10,11 * abstract * |