Extract from the Register of European Patents

EP About this file: EP0851587

EP0851587 - MOS logic circuit [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  02.07.2004
Database last updated on 26.03.2026
Most recent event   Tooltip02.07.2004No opposition filed within time limitpublished on 18.08.2004  [2004/34]
Applicant(s)For all designated states
Sharp Kabushiki Kaisha
22-22 Nagaike-cho
Abeno-ku
Osaka-shi
Osaka-fu 545-0013 / JP
[N/P]
Former [2003/35]For all designated states
SHARP KABUSHIKI KAISHA
22-22 Nagaike-cho, Abeno-ku
Osaka-shi, Osaka-fu 545-0013 / JP
Former [1998/27]For all designated states
SHARP KABUSHIKI KAISHA
22-22 Nagaike-cho, Abeno-ku
Osaka-shi, Osaka-fu 545 / JP
Inventor(s)01 / Kioi, Kazumasa
5-35-507, 1-chome
Oka Fujiidera-shi, Osaka 583 / JP
[1998/27]
Representative(s)Müller, Frithjof E.
Müller Hoffmann & Partner Patentanwälte Innere Wiener Strasse 17
81667 München / DE
[N/P]
Former [1998/27]Müller, Frithjof E., Dipl.-Ing.
Patentanwälte MÜLLER & HOFFMANN, Innere Wiener Strasse 17
81667 München / DE
Application number, filing date97118705.928.10.1997
[1998/27]
Priority number, dateJP1996034602825.12.1996         Original published format: JP 34602896
[1998/27]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0851587
Date:01.07.1998
Language:EN
[1998/27]
Type: A3 Search report 
No.:EP0851587
Date:01.09.1999
[1999/35]
Type: B1 Patent specification 
No.:EP0851587
Date:27.08.2003
Language:EN
[2003/35]
Search report(s)(Supplementary) European search report - dispatched on:EP21.07.1999
ClassificationIPC:H03K19/00
[1998/27]
CPC:
H03K19/0019 (EP,US); H10D84/0165 (KR); H03K19/0963 (EP,US);
H10D84/038 (KR); H10D84/859 (EP,US)
Designated contracting statesDE,   FR,   GB [2000/19]
Former [1998/27]AT,  BE,  CH,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Logische MOS-Schaltung[1998/27]
English:MOS logic circuit[1998/27]
French:Circuit logique MOS[1998/27]
Examination procedure07.09.1999Examination requested  [1999/44]
19.11.2002Communication of intention to grant the patent
19.03.2003Fee for grant paid
19.03.2003Fee for publishing/printing paid
Opposition(s)28.05.2004No opposition filed within time limit [2004/34]
Fees paidRenewal fee
21.10.1999Renewal fee patent year 03
24.10.2000Renewal fee patent year 04
10.10.2001Renewal fee patent year 05
29.10.2002Renewal fee patent year 06
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Documents cited:Search[DA]   YONG MOON ET AL: "EFFICIENT CHARGE RECOVERY LOGIC", 1995 SYMPOSIUM ON VLSI CIRCUITS, KYOTO, JUNE 8 - 10, 1995, 8 June 1995 (1995-06-08), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 129/130, XP000557835, ISBN: 0-7803-2600-8 [DA] 1-3,7-12,15,16 * page 129 - page 130 *
 [A]   KUGE S ET AL: "SOI-DRAM CIRCUIT TECHNOLOGIES FOR LOW POWER HIGH SPEED MULTI-GIGA SCALE MEMORIES", 1995 SYMPOSIUM ON VLSI CIRCUITS, KYOTO, JUNE 8 - 10, 1995, 8 June 1995 (1995-06-08), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 103/104, XP000557822, ISBN: 0-7803-2600-8 [A] 4,13,17,18 * page 103; figure 104 *
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