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EP0814507

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Extract from the Register of European Patents

EP About this file: EP0814507

EP0814507 - Trench capacitor DRAM cell and method of making the same [Right-click to bookmark this link]
Status	The application has been withdrawn Status updated on 28.06.2002 Database last updated on 11.04.2026
Most recent event Tooltip	28.06.2002	Withdrawal of application	published on 14.08.2002 [2002/33]
Applicant(s)	For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE
	For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US
	[N/P]
Former [1997/52]	For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 80333 München / DE
	For all designated states International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 / US
Inventor(s)	01 / Hammerl, Erwin Adalbert-Stifter-Strasse 21 84547 Emerting / DE
	02 / Mandelman, Jack A. 5 Jamie Lane Stormville, NY 12582 / US
	03 / Poschenrieder, Bernhard 10, Les Bergeronnettes 78170 La Celle Saint-Cloud / FR
	04 / Short, Alvin P. 78 Glenwood Avenue Poughkeepsie, NY 12603 / US
	05 / Srinivasan, Radhika 206 Magnolia Road Ramsey, NJ 07446 / US
	06 / Stengl, Reinhard J. Bergstrasse 3 86391 Stadtbergen / DE
	07 / Ho, Herbert L. 12 Rudy Road New Windsor, NY 12553 / US
	[1997/52]
Representative(s)	Muir, Ian Robertson Haseltine Lake Lincoln House 300 High Holborn London WC1V 7JH / GB
	[N/P]
Former [1997/52]	Muir, Ian R. Haseltine Lake & Co., Imperial House, 15-19 Kingsway London WC2B 6UD / GB
Application number, filing date	97304339.1	20.06.1997
	[1997/52]
Priority number, date	US19960667541	21.06.1996 Original published format: US 667541
	[1997/52]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	EP0814507
	Date:	29.12.1997
	Language:	EN
	[1997/52]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	29.10.1997
Classification	IPC:	H01L21/8242, H01L27/108	[1997/52]
	CPC:	H10B12/373 (EP,US); H10W10/014 (KR); H10B12/038 (EP,KR,US); H10B43/35 (KR)
Designated contracting states	AT, BE, CH, DE, LI [1998/37]
Former [1997/52]	AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE
Title	German:	Grabenkondensator-Speicherzelle und Verfahren zur Herstellung derselben	[1997/52]
	English:	Trench capacitor DRAM cell and method of making the same	[1997/52]
	French:	Cellule DRAM à condensateur empilé et procédé de fabrication	[1997/52]
Examination procedure	22.06.1998	Examination requested [1998/34]
	01.07.1998	Loss of particular rights, legal effect: designated state(s)
	04.11.1998	Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, DK, ES, FI, GR, IE, LI, LU, MC, NL, PT, SE
	17.06.2002	Application withdrawn by applicant [2002/33]
Fees paid	Renewal fee
	21.06.1999	Renewal fee patent year 03
	26.06.2000	Renewal fee patent year 04
	20.06.2001	Renewal fee patent year 05
	Penalty fee
	Penalty fee Rule 85a EPC 1973
	24.08.1998	AT M01 Not yet paid
	24.08.1998	BE M01 Not yet paid
	24.08.1998	CH M01 Not yet paid
	24.08.1998	DK M01 Not yet paid
	24.08.1998	ES M01 Not yet paid
	24.08.1998	FI M01 Not yet paid
	24.08.1998	GR M01 Not yet paid
	24.08.1998	IE M01 Not yet paid
	24.08.1998	LU M01 Not yet paid
	24.08.1998	MC M01 Not yet paid
	24.08.1998	NL M01 Not yet paid
	24.08.1998	PT M01 Not yet paid
	24.08.1998	SE M01 Not yet paid
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	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[A] JPH05218337
		[A] JPH0758217
		[A] JPS63254763
		[A] PATENT ABSTRACTS OF JAPAN vol. 17, no. 657 (E - 1470) 6 December 1993 (1993-12-06) [A] 1-7 * abstract *
		[A] PATENT ABSTRACTS OF JAPAN vol. 95, no. 6 31 July 1995 (1995-07-31) [A] 1-7 * abstract *
		[A] PATENT ABSTRACTS OF JAPAN vol. 13, no. 68 (E - 716)<3416> 16 February 1989 (1989-02-16) [A] 1-7 * abstract *

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