-
EP0834920
European procedure
- EP About this file
- EP Legal status
- EP Federated register
- EP Event history
- EP Citations
- EP Patent family
- EP All documents
Extract from the Register of European Patents
EP About this file: EP0834920
| EP0834920 - Improvements in or relating to semiconductor device metallization and interconnects [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 30.10.1998 Database last updated on 13.11.2024 | Most recent event Tooltip | 30.10.1998 | Withdrawal of application | published on 16.12.1998 [1998/51] | Applicant(s) | For all designated states TEXAS INSTRUMENTS INC. 13500 North Central Expressway Dallas Texas 75243 / US | [N/P] |
| Former [1998/15] | For all designated states TEXAS INSTRUMENTS INC. 13500 North Central Expressway Dallas, Texas 75243 / US | Inventor(s) | 01 /
Graas, Carole D. 6114 Norfolk Drive Garland, Texas 75265 / US | [1998/15] | Representative(s) | Williams, Janice, et al D Young & Co LLP 120 Holborn London EC1N 2DY / GB | [N/P] |
| Former [1998/15] | Williams, Janice, et al D. Young & Co., 21 New Fetter Lane London EC4A 1DA / GB | Application number, filing date | 97307832.2 | 03.10.1997 | [1998/15] | Priority number, date | US19960027843P | 03.10.1996 Original published format: US 27843 P | [1998/15] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0834920 | Date: | 08.04.1998 | Language: | EN | [1998/15] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 27.01.1998 | Classification | IPC: | H01L23/532, H01L23/522 | [1998/15] | CPC: |
H01L23/5226 (EP);
H01L21/28 (KR);
H01L23/53223 (EP);
H01L2924/0002 (EP)
| C-Set: |
H01L2924/0002, H01L2924/00 (EP)
| Designated contracting states | AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE [1998/15] | Extension states | AL | Not yet paid | LT | Not yet paid | LV | Not yet paid | RO | Not yet paid | SI | Not yet paid | Title | German: | Verbesserungen im Bezug auf Metallisierung und Verbindungen von Halbleitervorrichtungen | [1998/15] | English: | Improvements in or relating to semiconductor device metallization and interconnects | [1998/15] | French: | Améliorations concernant la métallisation et les interconnexions de dispositifs semi-conducteurs | [1998/15] | Examination procedure | 13.08.1998 | Examination requested [1998/41] | 22.10.1998 | Application withdrawn by applicant [1998/51] |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [PXA]US5646448 (KLEIN RICHARD K [US], et al) [PX] 1 * column 5, line 18 - line 43 * * column 4, line 20 - line 33 * [A] 3,4; | [X]EP0721216 (IBM [US]) [X] 1 * page 4, line 14 - line 48; figures 2,4 *; | [A]US5442235 (PARRILLO LOUIS C [US], et al) [A] 1-4 * column 3, line 53 - column 8, line 21; figures 1-6 *; | [DA]US5360995 (GRAAS CAROLE D [US]) [DA] 1-4 * column 3, line 1 - column 6, line 57; figures 1-7 *; | [A] - JIANG TAO ET AL, "ELECTROMIGRATION RELIABILITY OF TUNGSTEN AND ALUMINUM VIAS AND IMPROVEMENTS UNDER AC CURRENT STRESS", IEEE TRANSACTIONS ON ELECTRON DEVICES, (19930801), vol. 40, no. 8, pages 1398 - 1404, XP000383740 DOI: http://dx.doi.org/10.1109/16.223698 |