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EP0801155
European procedure
Extract from the Register of European Patents
EP About this file: EP0801155
| EP0801155 - Process and apparatus for forming single crystal silicon carbide (SiC) on a seed [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 09.05.2003 Database last updated on 24.08.2024 | Most recent event Tooltip | 23.10.2009 | Change - representative | published on 25.11.2009 [2009/48] | Applicant(s) | For all designated states COMMISSARIAT A L'ENERGIE ATOMIQUE 31/33, rue de la Fédération 75015 Paris Cédex 15 / FR | [1997/42] | Inventor(s) | 01 /
Jaussaud, Claude 6, allée des Tonnelles 38240 Meylan / FR | 02 /
Madard, Roland 11, allée des Arcelles 38320 Eybens / FR | 03 /
Anikin, Mikhail 23 avenue D. Casanova 38130 Echirolles / FR | 04 /
Garcon, Isabelle Apt. 28, Bât. D2, 33, chemin Ramelet Moundi 31100 Toulouse / FR | [1997/42] | Representative(s) | Poulin, Gérard, et al BREVALEX 95, rue d'Amsterdam 75378 Paris Cedex 8 / FR | [N/P] |
| Former [2009/48] | Poulin, Gérard, et al Brevalex 3, rue du Docteur Lancereaux 75008 Paris / FR | ||
| Former [2002/42] | Poulin, Gérard, et al BREVALEX 3, rue du Docteur Lancereaux 75008 Paris / FR | ||
| Former [1997/42] | Signore, Robert c/o BREVATOME 25, rue de Ponthieu 75008 Paris / FR | Application number, filing date | 97400804.7 | 08.04.1997 | [1997/42] | Priority number, date | FR19960004450 | 10.04.1996 Original published format: FR 9604450 | [1997/42] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP0801155 | Date: | 15.10.1997 | Language: | FR | [1997/42] | Type: | B1 Patent specification | No.: | EP0801155 | Date: | 03.07.2002 | Language: | FR | [2002/27] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 21.07.1997 | Classification | IPC: | C30B23/00, C30B29/36 | [1997/42] | CPC: |
C30B23/00 (EP,US);
C30B29/36 (EP,US)
| C-Set: |
C30B23/00, C30B29/36 (EP,US)
| Designated contracting states | DE, GB, IT, SE [1997/42] | Title | German: | Verfahren und Vorrichtung zur Herstellung einkristallines Siliziumkarbids (SiC) auf einem Keimkristall | [1997/42] | English: | Process and apparatus for forming single crystal silicon carbide (SiC) on a seed | [1997/42] | French: | Dispositif et procédé pour la formation de carbure de silicium (SIC) monocristallin sur un germe | [1997/42] | Examination procedure | 30.03.1998 | Examination requested [1998/22] | 31.08.2001 | Despatch of communication of intention to grant (Approval: Yes) | 17.12.2001 | Communication of intention to grant the patent | 28.02.2002 | Fee for grant paid | 28.02.2002 | Fee for publishing/printing paid | Opposition(s) | 04.04.2003 | No opposition filed within time limit [2003/26] | Fees paid | Renewal fee | 26.04.1999 | Renewal fee patent year 03 | 27.04.2000 | Renewal fee patent year 04 | 10.04.2001 | Renewal fee patent year 05 | 22.04.2002 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | IT | 03.07.2002 | [2008/07] | Documents cited: | Search | [A]JPH05319998 ; | [A]JPH0558774 ; | [A]WO8904055 (UNIV NORTH CAROLINA STATE [US]) [A] 1 * figure 1 *; | [A]WO9423096 (SIEMENS AG [DE], et al) [A] 1 * figures 1,2; claim 1 *; | [PX]WO9617113 (SIEMENS AG [DE], et al) [PX] 1 * claim 4 * | [A] - PATENT ABSTRACTS OF JAPAN, (19940308), vol. 18, no. 140, Database accession no. (C - 1177), & JP05319998 A 19931203 (SANYO ELECTRIC CO LTD) [A] * abstract * | [A] - PATENT ABSTRACTS OF JAPAN, (19930712), vol. 17, no. 367, Database accession no. (C - 1082), & JP05058774 A 19930309 (SANYO ELECTRIC CO LTD) [A] * abstract * |