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EP0898298
European procedure
Extract from the Register of European Patents
EP About this file: EP0898298
| EP0898298 - Determination of the thickness of a denuded zone in a silicon wafer [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 18.07.2008 Database last updated on 05.07.2024 | Most recent event Tooltip | 27.05.2016 | Lapse of the patent in a contracting state New state(s): FR | published on 29.06.2016 [2016/26] | Applicant(s) | For all designated states STMicroelectronics Srl Via C. Olivetti, 2 20041 Agrate Brianza (Milano) / IT | [N/P] |
| Former [1999/08] | For all designated states STMicroelectronics S.r.l. Via C. Olivetti, 2 20041 Agrate Brianza (Milano) / IT | Inventor(s) | 01 /
Polignano, Maria Luisa Via Monte Bianco, 17 20040 Cambiago / IT | 02 /
Brambilla, Marzio Via Riva, 8 22059 Robbiate / IT | 03 /
Cazzaniga, Francesco Via Pavia, 26 20030 Seveso / IT | 04 /
Pavia, Giuseppe Via C. Menotti, 11 25128 Brescia / IT | 05 /
Zanderigo, Federica Piazza de Gasperi, 41 35100 Padova / IT | [1999/08] | Representative(s) | Pellegri, Alberto, et al Società Italiana Brevetti S.p.A. Via Carducci, 8 20123 Milano / IT | [N/P] |
| Former [1999/08] | Pellegri, Alberto, et al c/o Società Italiana Brevetti S.p.A. Via Puccini, 7 21100 Varese / IT | Application number, filing date | 97830354.3 | 15.07.1997 | [1999/08] | Filing language | IT | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0898298 | Date: | 24.02.1999 | Language: | EN | [1999/08] | Type: | B1 Patent specification | No.: | EP0898298 | Date: | 12.09.2007 | Language: | EN | [2007/37] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 16.01.1998 | Classification | IPC: | H01L21/00, H01L21/66 | [1999/08] | CPC: |
H01L22/12 (EP,US)
| Designated contracting states | DE, FR, GB, IT [1999/44] |
| Former [1999/08] | AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Bestimmung der Dicke der Blosszone in einer Siliziumscheibe | [1999/08] | English: | Determination of the thickness of a denuded zone in a silicon wafer | [1999/08] | French: | Evaluation de l'épaisseur de la zone denudée sur une tranche de silicium | [1999/08] | Examination procedure | 27.05.1999 | Examination requested [1999/30] | 30.10.2003 | Despatch of a communication from the examining division (Time limit: M04) | 27.02.2004 | Reply to a communication from the examining division | 06.07.2004 | Despatch of a communication from the examining division (Time limit: M04) | 29.10.2004 | Reply to a communication from the examining division | 14.04.2005 | Despatch of a communication from the examining division (Time limit: M04) | 01.08.2005 | Reply to a communication from the examining division | 22.01.2007 | Communication of intention to grant the patent | 11.05.2007 | Fee for grant paid | 11.05.2007 | Fee for publishing/printing paid | Opposition(s) | 13.06.2008 | No opposition filed within time limit [2008/34] | Fees paid | Renewal fee | 15.07.1999 | Renewal fee patent year 03 | 17.07.2000 | Renewal fee patent year 04 | 26.07.2001 | Renewal fee patent year 05 | 29.07.2002 | Renewal fee patent year 06 | 28.07.2003 | Renewal fee patent year 07 | 28.07.2004 | Renewal fee patent year 08 | 27.07.2005 | Renewal fee patent year 09 | 26.07.2006 | Renewal fee patent year 10 | 31.07.2007 | Renewal fee patent year 11 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FR | 12.09.2007 | DE | 13.12.2007 | [2016/26] |
| Former [2008/36] | DE | 13.12.2007 | Documents cited: | Search | [Y]JPH05218166 ; | [Y]JPH0862122 ; | [A]EP0668613 (SOVIET GERMAN JOINT VENTURE MA [BY]) [A] 1-3 * the whole document *; | [A]US5272342 (KOTANI SHIGEO [JP]) [A] 1-3 * the whole document *; | [Y] - PATENT ABSTRACTS OF JAPAN, (19931206), vol. 017, no. 657, Database accession no. (E - 1470), & JP05218166 A 19930827 (KAWASAKI STEEL CORP) [Y] 1-3 * abstract * | [Y] - PATENT ABSTRACTS OF JAPAN, (19960731), vol. 096, no. 007, & JP08062122 A 19960308 (KOMATSU ELECTRON METALS CO LTD) [Y] 1-3 * abstract * | [A] - Impurity Diffusion and Gettering in Silicon Symposium, Boston, MA, USA, 27-30 Nov. 1984, H.J. Bath: "Characterization of denuded zones in silicon wafers", pp. 193-198, XP002050845 | Examination | - POLIGNAMO M.L. ET AL, "Denuded Zone Thickness from Surface Photovoltage Measurements", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, (199805), vol. 145, no. 5, pages 1632 - 1639 |