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EP0890184
European procedure
Extract from the Register of European Patents
EP About this file: EP0890184
| EP0890184 - A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC [Right-click to bookmark this link] | |||
| Former [1999/02] | A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC AND SUCH A DEVICE | ||
| [2009/09] | Status | No opposition filed within time limit Status updated on 14.05.2010 Database last updated on 18.11.2024 | Most recent event Tooltip | 07.09.2012 | Lapse of the patent in a contracting state New state(s): SE | published on 10.10.2012 [2012/41] | Applicant(s) | For all designated states Cree, Inc. 4600 Silicon Drive Durham, NC 27703 / US | [N/P] |
| Former [2004/11] | For all designated states CREE, INC. 4600 Silicon Drive Durham, NC 27703 / US | ||
| Former [1999/02] | For all designated states ABB RESEARCH LTD. P.O. Box 8131 8050 Zürich / CH | Inventor(s) | 01 /
ROTTNER, Kurt Langelandsgatan 12 S-164 43 Kista / SE | [1999/02] | Representative(s) | Olsson, Jan, et al Bjerkéns Patentbyrå KB P.O.Box 1274 801 37 Gävle / SE | [N/P] |
| Former [1999/02] | Olsson, Jan, et al Bjerkéns Patentbyra KB P.O.Box 1274 801 37 Gävle / SE | Application number, filing date | 97915823.5 | 26.03.1997 | [1999/02] | WO1997SE00533 | Priority number, date | SE19960001174 | 27.03.1996 Original published format: SE 9601174 | [1999/02] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | WO9736318 | Date: | 02.10.1997 | Language: | EN | [1997/42] | Type: | A2 Application without search report | No.: | EP0890184 | Date: | 13.01.1999 | Language: | EN | The application published by WIPO in one of the EPO official languages on 02.10.1997 takes the place of the publication of the European patent application. | [1999/02] | Type: | B1 Patent specification | No.: | EP0890184 | Date: | 08.07.2009 | Language: | EN | [2009/28] | Search report(s) | International search report - published on: | SE | 04.12.1997 | Classification | IPC: | H01L21/00 | [1999/02] | CPC data not yet available | Designated contracting states | DE, FR, GB, IT, SE [1999/02] | Title | German: | HERSTELLUNGSVERFAHREN FÜR EINE HALBLEITERANORDNUNG MIT EINER SiC SCHICHT | [2009/09] | English: | A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC | [2009/09] | French: | PROCEDE DE FABRICATION D'UN COMPOSANT A SEMI-CONDUCTEUR POSSEDANT UNE COUCHE DE SEMI-CONDUCTEUR EN SiC ET | [2009/09] |
| Former [1999/02] | HERSTELLUNGSVERFAHREN FÜR EINE HALBLEITERANORDNUNG MIT EINER SiC SCHICHT UND DEREN ANORDNUNG | ||
| Former [1999/02] | A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC AND SUCH A DEVICE | ||
| Former [1999/02] | PROCEDE DE FABRICATION D'UN COMPOSANT A SEMI-CONDUCTEUR POSSEDANT UNE COUCHE DE SEMI-CONDUCTEUR EN SiC ET COMPOSANT | Entry into regional phase | 28.09.1998 | National basic fee paid | 28.09.1998 | Designation fee(s) paid | 28.09.1998 | Examination fee paid | Examination procedure | 19.09.1997 | Request for preliminary examination filed International Preliminary Examining Authority: SE | 28.09.1998 | Examination requested [1999/02] | 12.12.2002 | Despatch of a communication from the examining division (Time limit: M06) | 19.06.2003 | Reply to a communication from the examining division | 17.02.2005 | Date of oral proceedings | 22.02.2005 | Minutes of oral proceedings despatched | 05.01.2006 | Despatch of communication that the application is refused, reason: substantive examination {1} | 03.02.2009 | Communication of intention to grant the patent | 18.05.2009 | Fee for grant paid | 18.05.2009 | Fee for publishing/printing paid | Appeal following examination | 06.03.2006 | Appeal received No. T0427/06 | 06.03.2006 | Statement of grounds filed | 09.10.2008 | Result of appeal procedure: remittal for grant | 09.10.2008 | Date of oral proceedings | 15.10.2008 | Minutes of oral proceedings despatched | 09.10.2008 | Date of oral proceedings | 09.09.2008 | Date of oral proceedings | Opposition(s) | 09.04.2010 | No opposition filed within time limit [2010/24] | Fees paid | Renewal fee | 11.03.1999 | Renewal fee patent year 03 | 13.03.2000 | Renewal fee patent year 04 | 16.03.2001 | Renewal fee patent year 05 | 13.03.2002 | Renewal fee patent year 06 | 11.03.2003 | Renewal fee patent year 07 | 15.03.2004 | Renewal fee patent year 08 | 14.03.2005 | Renewal fee patent year 09 | 09.03.2006 | Renewal fee patent year 10 | 14.03.2007 | Renewal fee patent year 11 | 14.03.2008 | Renewal fee patent year 12 | 13.03.2009 | Renewal fee patent year 13 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | SE | 08.07.2009 | GB | 26.03.2010 | [2012/41] |
| Former [2011/28] | GB | 26.03.2010 | Cited in | International search | [A]US5021851 (HAKEN ROGER A [US], et al); | [A]US4914500 (LIU RUICHEN [US], et al); | [A]US4851360 (HAKEN ROGER A [US], et al); | [A]US4801555 (HOLLY PATRICK J [US], et al) | Examination | GB1201428 | GB1397305 | US5322805 | GB1303660 | - CARL-MIKAEL ZETTERLING, Process technology for silicon devices, LONDON, UK, THE INSTITUTION OF ELECTRICAL ENGINEERS * pages 74-76 * | - The Encyclopaedia of Materials: Science and Technology, ELSEVIER SCIENCE LTD. * pages 8505-8519 * | - CAPANO M.A. ET AL, "Phosphorous Implantation into 4H-Silicon Carbide", JOURNAL OF ELETRONIC MATERIALS, (2000), vol. 29, no. 2, page 210 |